SI4404DY-T1 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | SI4404DY-T1 |
厂家: | VISHAY |
描述: | N-Channel 30-V (D-S) MOSFET |
文件: | 总4页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4404DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
0.0065 @ V = 10 V
23
17
GS
30
0.008 @ V = 4.5 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4404DY
Si4404DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
T
= 25_C
= 70_C
23
19
15
12
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
2.9
3.5
2.2
1.3
1.6
1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
29
67
13
35
80
16
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
1
Si4404DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 30 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 30 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
30
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0045
0.0065
0.008
V
= 10 V, I = 23 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 17 A
0.0068
80
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 23 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 2.9 A, V = 0 V
0.8
1.2
55
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
36
15
g
Q
Q
V
= 15 V, V = 4.5 V, I = 23 A
nC
gs
gd
DS
GS
D
12
R
g
1.5
2.2
20
3.7
30
W
t
d(on)
t
r
15
23
V
DD
= 15 V, R = 15 W
L
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
105
40
160
60
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
GS
= 10 thru 4 V
50
40
30
20
10
0
T
= 125_C
C
3 V
25_C
-55_C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
2
Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
6000
5000
4000
3000
2000
1000
0
C
iss
0.008
V
= 4.5 V
= 10 V
GS
0.006
0.004
0.002
0.000
V
GS
C
oss
C
rss
0
10
20
D
30
40
50
60
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 23 A
I = 23 A
D
6
4
2
0
0
20
Q
40
60
80
-50
-25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.010
60
10
0.008
0.006
0.004
0.002
0.000
T
= 150_C
J
T
= 25_C
J
I
D
= 23 A
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
3
Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
50
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
40
30
20
10
0
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
4
相关型号:
SI4406DY-T1-GE3
Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOP-8
VISHAY
©2020 ICPDF网 联系我们和版权申明