SI4406DY-T1-E3 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4406DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4406DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
20
Available
TrenchFET® Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
0.0045 at VGS = 10 V
0.0055 at VGS = 4.5 V
•
•
30
17
•
100 % Rg Tested
APPLICATIONS
•
DC/DC Converters
SO-8
•
Synchronous Rectifiers
D
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View
S
N-Channel MOSFET
Ordering Information:
Si4406DY-T1-E3 (Lead (Pb)-free)
Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
VGS
TA = 25 °C
A = 70 °C
20
15
13
10
Continuous Drain Current (TJ = 150 °C)a
ID
T
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
60
2.9
3.5
2.2
1.3
1.6
1
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
29
Maximum
Unit
t ≤ 10 s
35
80
16
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
67
°C/W
RthJF
13
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
www.vishay.com
1
Si4406DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
1.0
1.95
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
30
VGS = 10 V, ID = 20 A
0.0035
0.0043
95
0.0045
0.0055
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 19 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 20 A
IS = 2.9 A, VGS = 0 V
S
V
VSD
0.72
1.1
50
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
34
15
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
nC
10
0.5
1.3
21
2.2
35
Ω
td(on)
tr
td(off)
tf
15
25
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
100
30
150
45
ns
Source-Drain Reverse Recovery
Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
50
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
3 V
T
C
= 125 °C
25 °C
- 55 °C
3.0 3.5
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
Si4406DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
7000
5600
4200
2800
1400
0
C
iss
0.008
0.006
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 15 V
= 20 A
V
I
= 10 V
= 20 A
DS
D
GS
D
0
10
20
30
40
50
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
0.020
0.016
0.012
0.008
0.004
0.000
50
10
T = 150 °C
J
I
D
= 20 A
T = 25 °C
J
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
www.vishay.com
3
Si4406DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
60
50
0.4
I
D
= 250 µA
0.2
0.0
40
30
- 0.2
- 0.4
- 0.6
- 0.8
20
10
0
10
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 67 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71824.
www.vishay.com
4
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4406DY-T1-GE3
Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOP-8
VISHAY
SI4409DY-T1-GE3
Small Signal Field-Effect Transistor, 1.3A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
VISHAY
SI4410BDY-T1-GE3
TRANSISTOR 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明