SI4410BDY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4410BDY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4410BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D 100% Rg Tested
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
D Battery Switch
0.0135 @ V = 10 V
10
8
GS
30
0.020 @ V = 4.5 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4410BDY
Si4410BDY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
10
8
7.5
6
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
50
DM
a
Continuous Source Current (Diode Conduction)
I
2.3
2.5
1.6
1.26
1.4
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.9
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
70
25
50
90
30
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
1
Si4410BDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
20
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.011
0.0135
0.020
V
= 10 V, I = 10 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 5 A
0.0165
25
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 2.3 A, V = 0 V
0.76
1.1
SD
GS
Dynamicb
Gate Charge
Q
V
= 15 V, V = 5 V, I = 10 A
13
25
5.5
3.7
1.6
10
10
40
15
35
20
40
g
DS
GS
D
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
gt
nC
Q
V
= 15 V, V = 10 V, I = 10 A
GS D
gs
gd
DS
Q
R
g
f = 1 MHz
0.5
2.7
15
15
60
25
70
W
t
d(on)
t
r
V
= 25 V, R = 25 W
L
GEN G
DD
^ 1 A, V
I
D
= 10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 5 V
GS
40
30
20
10
0
4 V
T
C
= 125_C
25_C
2 V
3 V
-55_C
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
2
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
2000
1600
1200
800
400
0
C
iss
0.025
0.020
V
= 4.5 V
GS
0.015
0.010
0.005
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.6
1.2
0.8
0.4
0.0
V
D
= 15 V
V
= 10 V
GS
DS
I
= 10 A
I = 10 A
D
6
4
2
0
0
5
10
15
20
25
-50
-25
0
J
25
50
75
100 125 150
T
- Junction Temperature (_C)
Q
- Total Gate Charge (nC)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
50
T = 150_C
J
I
D
= 10 A
10
T = 25_C
J
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
3
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
50
40
0.4
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
30
20
10
0
T
A
= 25_C
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by r
100 ms, 10 ms
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
T
= 25_C
A
Single Pulse
dc, 100 s
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
4
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
5
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