SI4413DY-T1 [VISHAY]
Power Field-Effect Transistor, 9A I(D), 30V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | SI4413DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 9A I(D), 30V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4413DY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
- 13
Pb-free
0.0095 at VGS = - 10 V
0.0145 at VGS = - 4.5 V
Available
APPLICATIONS
- 30
RoHS*
- 10
•
Notebook
COMPLIANT
- Load switch
- Battery switch
SO-8
S
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View
D
Ordering Information:
Si4413DY-T1
Si4413DY-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 sec
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 30
20
V
VGS
TA = 25 °C
TA = 70 °C
- 13
- 9
Continuous Drain Current (TJ = 150 °C)a
ID
- 10.5
- 7.5
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
- 50
- 2.7
3.0
- 1.36
1.5
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
1.9
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
33
Maximum
Unit
t ≤ 10 sec
Steady State
Steady State
42
84
21
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
70
°C/W
RthJF
16
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72054
S-70315-Rev. B, 12-Feb-07
www.vishay.com
1
Si4413DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 1.0
3.0
100
- 1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
- 30
VGS = - 10 V, ID = - 13 A
0.0075
0.0115
50
0.0095
0.0145
Drain-Source On-State Resistancea
rDS(on)
Ω
VGS = - 4.5 V, ID = - 10 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 13 A
IS = - 2.7 A, VGS = 0 V
S
V
VSD
- 0.74
- 1.1
95
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
61
15.5
32
V
DS = - 15 V, VGS = - 5 V, ID = - 13 A
nC
3.4
21
Ω
td(on)
tr
td(off)
tf
35
30
18
V
DD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
Turn-Off Delay Time
Fall Time
170
97
260
150
ns
Source-Drain Reverse Recovery
Time
trr
IF = - 2.1 A, di/dt = 100 A/µs
70
110
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
= 10 thru 4 V
GS
T
= 125 °C
C
25 °C
3 V
4
- 55 °C
3.5 4.0
2 V
0
1
2
3
5
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72054
S-70315-Rev. B, 12-Feb-07
Si4413DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
7000
5600
4200
2800
1400
0
C
iss
0.016
V
GS
= 4.5 V
0.012
0.008
0.004
0.000
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
I
= 10 V
DS
= 13 A
GS
I
= 13 A
D
6
4
2
0
0
22
44
66
88
110
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.030
0.024
0.018
0.012
0.006
0.000
100
10
T
= 150 °C
J
I
D
= 13 A
1
T
= 25 °C
J
0.1
0
2
4
6
8
10
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72054
S-70315-Rev. B, 12-Feb-07
www.vishay.com
3
Si4413DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
100
0.8
80
60
0.6
0.4
I
D
= 250 µA
40
20
0
0.2
0.0
- 0.2
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
J
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by r
DS(on)
1 ms
10
10 ms
100 ms
1
1 s
10 s
dc
0.1
T
= 25 °C
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72054
S-70315-Rev. B, 12-Feb-07
Si4413DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72054.
Document Number: 72054
S-70315-Rev. B, 12-Feb-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4416DY
Power Field-Effect Transistor, 9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
TEMIC
SI4416DY/T3
TRANSISTOR 9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal
NXP
SI4416DYF011
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明