SI4446DY-T1-GE3 [VISHAY]
MOSFET N-CH D-S 40V 8-SOIC;
| 型号： | SI4446DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET N-CH D-S 40V 8-SOIC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4446DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)d
Definition
TrenchFET® Power MOSFET
100 % Rg
100 % Rg UIS Tested
0.040 at VGS = 10 V
0.045 at VGS = 4.5 V
5.2
4.9
•
•
•
40
8
APPLICATIONS
CCFL Inverter
•
SO-8
D
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View
S
N-Channel MOSFET
Ordering Information: Si4446DY-T1-E3 (Lead (Pb)-free)
Si4446DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
40
12
V
VGS
TA = 25 °C
A = 70 °C
5.2
4.2
3.9
3.1
Continuous Drain Current (TJ = 150 °C)a
ID
T
IDM
IS
Pulsed Drain Current
30
A
Continuous Source Current (Diode Conduction)a
Avalanche Current
1.7
0.9
IAS
EAS
13
L = 0.1 mH
Single-Pulse Avalanche Energy
8.5
mJ
W
TA = 25 °C
TA = 70 °C
2.0
1.3
1.1
0.7
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
52
Maximum
62.5
Unit
t ≤ 10 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
RthJF
Steady State
Steady State
90
110
°C/W
32
40
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
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1
New Product
Si4446DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
ΔVDS/TJ
ΔVGS(th)/TJ
IGSS
VDS = VGS, ID = 250 µA
ID = 250 µA
Gate-Source Threshold Voltage
0.6
1.6
V
mV/°C
nA
V
DS Temperature Coefficient
40
VGS(th) Temperature Coefficient
Gate-Body Leakage
- 3.8
VDS = 0 V, VGS
=
12 V
100
1
VDS = 40 V, VGS = 0 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
A
VGS = 10 V, ID = 5.2 A
0.033
0.037
18
0.040
0.045
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = 4.5 V, ID = 4.9 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 5.2 A
IS = 1.7 A, VGS = 0 V
S
V
VSD
0.75
1.2
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
700
76
45
8
VDS = 20 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
12
Qgs
Qgd
Rg
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
1.5
2.4
1.9
7
nC
2.9
11
17
40
13
40
26
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 15 V, RL = 15 Ω
11
27
8
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off DelayTime
Fall Time
ns
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
25
17
IF = 1.7 A, dI/dt = 100 A/µs
Qrr
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
16
12
8
V
GS
= 10 V thru 3 V
16
12
8
T
= 125
C
2 V
4
4
25 °C
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
0.050
0.045
0.040
0.035
0.030
0.025
0.020
1200
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
V
D
= 10 V
I
D
= 5.2 A
GS
= 5.2 A
I
V
= 10 V
DS
V
DS
= 20 V
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
7
8
9
10 11
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
g
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
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3
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
0.16
0.12
0.08
0.04
0.00
20
I
D
= 5.2 A
10
T
= 150 °C
J
T
= 125 °C
A
T
= 25 °C
J
T
A
= 25 °C
6
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
8
10
V
GS
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
100
80
I
D
= 250 µA
60
- 0.0
- 0.2
- 0.4
- 0.6
40
20
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.001
0.1
1
10
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1 ms
1
10 ms
100 ms
0.1
T
= 25 °C
C
1 s
10 s
Single Pulse
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V at which R
is specified
GS
DS(on)
Safe Operating Area
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Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73661.
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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