SI4465DY-T1-E3 [VISHAY]
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,;
| 型号： | SI4465DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4465DY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.009 @ V = –4.5 V
–14
–12
–10
GS
0.011 @ V = –2.5 V
GS
–8
0.016 @ V = –1.8 V
GS
S
SO-8
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
S
G
Top View
D
Ordering Information: Si4465DY-T1
Si4465DY-T1–E3 (Lead (Pb)–free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
–8
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
"8
T
= 25 C
= 70 C
–14
–11
A
a, b
Continuous Drain Current (T = 150 C)
J
I
D
T
A
A
Pulsed Drain Current
I
–40
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
–2.1
T
= 25 C
= 70 C
2.5
A
a, b
Maximum Power Dissipation
P
W
C
D
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
50
a
Maximum Junction-to-Ambient
R
thJA
C/W
Steady State
80
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
www.vishay.com
1
Si4465DY
Vishay Siliconix
SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–0.45
–1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= –8 V, V = 0 V
–1
–5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –8 V, V = 0 V, T = 55 C
GS J
a
On-State Drain Current
I
V
DS
w –5 V, V = –4.5 V
–20
A
D(on)
GS
V
= –4.5 V, I = –14 A
0.007
0.009
0.009
0.011
GS
GS
GS
D
a
V
V
= –2.5 V, I = –12 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.012
0.016
= –1.8 V, I = –10 A
D
a
Forward Transconductance
g
V
= –10 V, I = –14 A
60
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= –2.1 A, V = 0 V
0.7
–1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
80
15
120
g
Q
Q
V
= –4 V, V = –4.5 V, I = –14 A
nC
gs
gd
DS
GS
D
9
R
G
3.3
45
5
W
t
t
90
d(on)
t
r
55
110
760
380
120
V
DD
= –4 V, R = 4 W
L
I
D
^ –1 A, V = –4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
380
190
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –2.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
www.vishay.com
2
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
= 5 thru 2 V
GS
32
24
16
8
1.5 V
T
= 125 C
C
25 C
1 V
–55 C
1.5
0
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
14000
12000
10000
8000
6000
4000
2000
0
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
8
16
24
32
40
0
2
4
6
8
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
D
= 4 V
V
= 4.5 V
DS
= 14 A
GS
I = 14 A
I
D
0
20
Q
40
60
80
–50 –25
0
25
50
75
100 125 150
– Total Gate Charge (nC)
T – Junction Temperature ( C)
J
g
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
www.vishay.com
3
Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
0.03
0.02
0.01
0.00
50
T
= 150 C
J
10
T
= 25 C
J
I
D
= 14 A
1
0.00
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.3
50
40
I
D
= 250 mA
0.2
30
20
10
0.1
0.0
–0.1
–0.2
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
– Temperature ( C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 C/W
thJA
(t)
0.02
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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