SI4714DY [VISHAY]
N-Channel 30 V (D-S) MOSFET with Schottky Diode; N沟道30 V （ D- S）的MOSFET与肖特基二极管
| 型号： | SI4714DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| 文件： | 总10页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4714DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
ID (A)a
13.6
Qg (Typ.)
•
SkyFET Monolithic TrenchFET Gen.
Power MOSFET and Schottky Diode
100 % Rg Tested
0.0135 at VGS = 10 V
0.0175 at VGS = 4.5 V
30
7.3 nC
12.0
•
•
•
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
SO-8
APPLICATIONS
•
Notebook PC
- System Power, Memory
Buck Converter
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
•
•
Synchronous Rectifier Switch
D
Top View
Schottky Diode
G
Ordering Information:
Si4714DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
13.6
10.7
10.1b, c
Continuous Drain Current (TJ = 150 °C)
ID
T
8.1b, c
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
50
TC = 25 °C
TA = 25 °C
3.8
Continuous Source-Drain Diode Current
2.1b, c
15
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
11.25
4.5
mJ
W
TC = 25 °C
TC = 70 °C
2.8
PD
Maximum Power Dissipation
2.5b, c
1.6b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typ.
38
Max.
50
Unit
Maximum Junction-to-Ambientb, d
t 10 s
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
22
28
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4714DY
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0, ID = 1 mA
Drain-Source Breakdown Voltage
30
1
V
nA
mA
A
VDS = VGS, ID= 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
2.3
100
0.150
10
VDS = 0 V, VGS
=
20 V
VDS = 30 V, VGS = 0 V
0.017
1
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On -State Drain Currenta
V
DS = 30 V, VGS = 0 V, TJ = 100 °C
V
DS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
GS = 4.5 V, ID = 10 A
30
0.0110
0.0145
25
0.0135
0.0175
Drain-Source On-State Resistancea
Forward Transconductancea
V
VDS = 15 V, ID = 15 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
722
194
64
16.3
7.3
2.2
2
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 10 A
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
24.5
11
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
0.3
1.1
9
2.2
18
35
20
20
14
22
28
18
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
18
10
10
7
V
DD = 15 V, RL = 1.5
I
D 10 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
11
14
9
VDD = 15 V, RL = 1.5
I
D 10 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode and Schottky Characteristics
IS
ISM
VSD
trr
TC = 25 °C
IS = 1 A
Continuous Source-Drain Diode Current
3.8
50
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.42
14.5
5
0.53
29
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
7.5
7
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4714DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
8
VGS = 10 V thru 4 V
40
30
6
20
4
TC = 25 °C
VGS = 3 V
TC = - 55 °C
10
2
TC = 125 °C
VGS = 2 V
0
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.022
0.019
0.016
0.013
0.010
0.007
1000
800
600
400
200
0
Ciss
VGS = 4.5 V
Coss
VGS = 10 V
Crss
0
10
20
30
40
50
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
ID = 10 A
ID = 15 A
VGS = 10 V
VDS = 15 V
6
VDS = 20 V
VDS = 10 V
VGS = 4.5 V
4
2
0
- 50
- 25
0
25
50
75
100
125
150
0
3.4
6.8
10.2
13.6
17.0
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4714DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.10
0.08
0.06
0.04
0.02
0
100
ID = 15 A
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.01
TJ = 125 °C
TJ = 25 °C
0.001
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10-1
10-2
10-3
10-4
10-5
10-6
10-7
80
64
48
32
16
0
30 V
20 V
10 V
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
100 μs
10
1 ms
10 ms
1
100 ms
Limited by RDS(on)
*
1 s
10 s
0.1
DC
TC = 25 °C
Single Pulse
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4714DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
16
13
10
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
6.0
4.8
3.6
2.4
1.2
0.0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4714DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67942.
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Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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VISHAY SILICONIX
TrenchFET® Power MOSFETs
Application Note 808
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
0.288
7.3
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
0.050
1.27
0.088
2.25
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
0.288
7.3
0.050
1.27
0.196
5.0
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
Document Number: 70740
Revision: 18-Jun-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Document Number: 91000
Revision: 11-Mar-11
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