SI4776DY-T1-GE3 [VISHAY]
N-Channel 30 V (D-S) MOSFET with Schottky Diode; N沟道30 V （ D- S）的MOSFET与肖特基二极管
| 型号： | SI4776DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4776DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) () Max.
0.016 at VGS = 10 V
0.020 at VGS = 4.5 V
ID (A)a
11.9
Qg (Typ.)
•
SkyFETMonolithic TrenchFETPower
MOSFET and Schottky Diode
100 % Rg and UIS Tested
30
5.5 nC
10.6
•
•
Compliant to RoHS Directive 2002/95/EC
SO-8
APPLICATIONS
•
Notebook System Power and Memory
- Low Side
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
D
Schottky Diode
G
Top View
N-Channel MOSFET
Ordering Information:
Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
VDS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
11.9
9.5
9.3b, c
Continuous Drain Current (TJ = 150 °C)
ID
T
7.5b, c
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
50
TC = 25 °C
TA = 25 °C
3.7
Continuous Source-Drain Diode Current
2.3b, c
10
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
5
mJ
W
TC = 25 °C
TC = 70 °C
4.1
2.6
2.5b, c
PD
Maximum Power Dissipation
TA = 25 °C
1.6b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typ.
40
Max.
50
Unit
Maximum Junction-to-Ambientb, d
t 10 s
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
24
30
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0, ID = 1 mA
Drain-Source Breakdown Voltage
30
1
V
nA
mA
A
VDS = VGS, ID= 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
2.3
100
0.150
10
VDS = 0 V, VGS
=
20 V
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 100 °C
VDS 5 V, VGS = 10 V
0.013
1
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On -State Drain Currenta
V
30
VGS = 10 V, ID = 10 A
0.013
0.016
30
0.016
0.020
Drain-Source On-State Resistancea
Forward Transconductancea
V
GS = 4.5 V, ID = 7 A
VDS = 15 V, ID = 10 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
521
141
57
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 10 A
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
11.6
5.5
1.5
1.9
0.8
12
17.5
8.5
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
0.2
1.6
24
24
28
16
20
22
22
12
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
12
V
DD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
14
8
ns
Turn-On Delay Time
Rise Time
10
11
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
11
6
Drain-Source Body Diode and Schottky Characteristics
IS
ISM
VSD
trr
TC = 25 °C
IS = 1 A
Continuous Source-Drain Diode Current
3.7
50
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.44
12
0.55
24
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
4.5
6.5
5.5
9
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
40
30
20
10
0
10
VGS = 10 V thru 4 V
8
6
TC = 25 °C
4
VGS = 3 V
TC = - 55 °C
2
TC = 125 °C
VGS = 2 V
2.0 2.5
0
0.0
0.5
1.0
1.5
0.0
1.0
2.0
3.0
4.0
5.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
700
560
420
280
140
0
Ciss
VGS = 4.5 V
Coss
Crss
VGS = 10 V
0
5
10
15
20
25
30
0
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 10 A
ID = 10 A
VGS = 10 V
VDS = 15 V
6
VGS = 4.5 V
VDS = 20 V
VDS = 10 V
4
2
0
0
2
4
6
8
10
12
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
0.040
0.030
0.020
0.010
0.000
100
10
1
ID = 10 A
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10-1
10-2
10-3
10-4
10-5
10-6
10-7
150
120
90
60
30
0
30 V
20 V
10 V
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
100 μs
10
1
1 ms
10 ms
Limited by RDS(on)
*
100 ms
1 s
0.1
0.01
TC = 25 °C
10 s
Single Pulse
BVDSS Limited
10
DC
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
0.1
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 95 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63316.
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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