SI4828DY [VISHAY]
Dual N-Channel 30-V (D-S) MOSFET; 双N通道30 -V （D -S ）的MOSFET
| 型号： | SI4828DY |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 30-V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4828DY
Vishay Siliconix
New Product
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.022 @ V = 10 V
7.5
6.5
9.8
8.5
GS
Channel-1
Channel-2
0.030 @ V = 4.5 V
GS
30
0.0135 @ V = 10 V
GS
0.0175 @ V = 4.5 V
GS
D
1
D
1
D
2
D
2
SO-8
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
1
G
1
G
2
S
2
G
2
S
1
S
2
Top View
N-Channel 1
MOSFET
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Channel-1
Channel-2
10 secs
Steady State 10 secs
Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
7.5
6
5.8
4.6
9.8
7.8
7.5
6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
30
40
DM
a
Continuous Source Current (Diode Conduction)
I
1.8
2
1.06
1.17
0.75
1.8
2
1.06
1.17
0.75
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
1.78
1.28
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
Steady-State
Steady-State
55
89
36
62.5
107
45
53
89
34
62.5
107
42
a
Maximum Junction-to-Ambient
R
thJA
thJC
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
1
Si4828DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
0.8
1.0
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
V
GS(th)
DS
GS
D
100
100
1
I
V
= 0 V, V = 20 V
nA
GSS
DS
DS
GS
V
= 24 V, V = 0 V
GS
1
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
15
15
V
DS
= 24 V, V = 0 V, T = 85_C
GS
J
20
30
a
On-State Drain Current
I
V
= 5 V, V = 10 V
GS
DS
V
= 10 V, I = 7.5 A
D
0.018
0.011
0.024
0.0145
17
0.022
0.0135
0.030
GS
V
= 10 V, I = 9.8 A
D
GS
GS
GS
a
Drain-Source On-State Resistance
r
W
V
V
= 4.5 V, I = 6.5 A
D
= 4.5 V, I = 8.5 A
D
0.0175
V
= 15 V, I = 7.5 A
D
DS
a
Forward Transconductance
g
fs
S
V
V
= 15 V, I = 9.8 A
30
DS
D
I
I
= 1.8 A, V = 0 V
0.72
0.72
1.1
1.1
S
S
GS
a
Diode Forward Voltage
V
SD
= 1.8 A, V = 0 V
GS
Dynamicb
8.0
23
1.75
8.6
3.2
7.2
10
17
5
12
34
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Q
g
Channel-1
V
= 15 V, V = 5 V, I = 7.5 A
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
nC
Channel-2
V
DS
= 15 V, V = 5 V, I = –9.8 A
GS D
20
30
10
20
50
100
16
30
60
70
t
d(on)
Channel-1
V
= 15 V, R = 15 W
DD
L
t
r
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
10
26
60
10
17
30
40
Channel-2
= 15 V, R = 15 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
t
f
I
= 1.8 A, di/dt = 100 A/ms
= 1.8 A, di/dt = 100 mA/ms
F
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
2
Si4828DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ1
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 4 V
24
18
12
6
3 V
T
C
= 125_C
25_C
1 V
–55_C
2 V
0
0
0
2
4
6
8
10
0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.05
0.04
0.03
0.02
0.01
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
6
rss
0
12
18
24
30
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 7.5 A
V
= 10 V
GS
= 7.5 A
DS
D
I
D
6
4
2
0
0
3
6
9
12
15
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
3
Si4828DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0
40
T = 150_C
J
10
T = 25_C
J
I
D
= 7.5 A
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
– Gate-to-Source Voltage (V)
GS
8
10
V
– Source-to-Drain Voltage (V)
V
SD
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
100
80
0.4
0.2
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–1
60
40
20
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T – Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 89_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
4
Si4828DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ1
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ2
Output Characteristics
Transfer Characteristics
40
50
40
30
20
10
0
V
= 10 thru 4 V
GS
32
24
16
8
T
C
= 125_C
25_C
2 V
3 V
8
–55_C
0
0
2
4
6
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.020
0.016
0.012
0.008
0.004
0
4200
3500
2800
2100
1400
700
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
8
16
24
32
40
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
5
Si4828DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ2
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
V
= 15 V
= 9.8 A
V
= 10 V
DS
GS
1.6
1.4
1.2
1.0
0.8
0.6
I
D
I = 9.8 A
D
8
6
4
2
0
0
9
18
27
36
45
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0
40
10
T = 150_C
J
T = 25_C
J
I
D
= 9.8 A
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
100
80
I
D
= 250 mA
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1
60
40
20
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T – Temperature (_C)
J
Time (sec)
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
6
Si4828DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
CHANNELĆ2
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 89_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com S FaxBack 408-970-5600
7
This datasheet has been download from:
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