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SI4840DY-T1 [VISHAY]

N-Channel 40-V (D-S) MOSFET; N通道40 -V （D -S ）的MOSFET
SI4840DY-T1
型号： SI4840DY-T1
厂家： VISHAY    VISHAY
描述：

N-Channel 40-V (D-S) MOSFET
N通道40 -V （D -S ）的MOSFET
文件： 总4页 (文件大小：44K)
中文：  中文翻译
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Si4840DY  
Vishay Siliconix  
N-Channel 40-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.009 @ V = 10 V  
14  
12  
GS  
40  
0.012 @ V = 4.5 V  
GS  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View  
Ordering Information: Si4840DY  
N-Channel MOSFET  
Si4840DY-T1 (with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
14  
11  
10  
8
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
50  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.8  
3.1  
2.0  
1.4  
1.56  
1.0  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
33  
65  
17  
40  
80  
21  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71188  
www.vishay.com  
S-03950—Rev. B, 16-May-03  
2-1  
 
Si4840DY  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= 32 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 32 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
50  
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.0075  
0.009  
0.012  
V
= 10 V, I = 14 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 12 A  
0.0095  
50  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 14 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= 2.8 A, V = 0 V  
0.75  
1.1  
28  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
18.5  
6
g
Q
Q
V
= 20 V, V = 5 V, I = 14 A  
nC  
gs  
gd  
DS  
GS  
D
7.5  
0.8  
15  
10  
50  
20  
30  
R
g
0.2  
1.2  
30  
W
t
d(on)  
t
r
20  
V
DD  
= 20 V, R = 20 W  
L
= 10 V, R = 6 W  
GEN G  
ns  
ns  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
t
100  
40  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.8 A, di/dt = 100 A/ms  
60  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 4 V  
40  
30  
20  
10  
0
3 V  
T
= 125_C  
C
25_C  
-55_C  
2 thru 0 V  
5
0
1
2
3
4
6
0.0  
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
Document Number: 71188  
www.vishay.com  
S-03950—Rev. B, 16-May-03  
2-2  
Si4840DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
3000  
2500  
2000  
1500  
1000  
500  
0.016  
0.012  
C
iss  
V
= 4.5 V  
= 10 V  
GS  
V
0.008  
0.004  
0.000  
GS  
C
oss  
C
rss  
0
0
10  
20  
30  
40  
50  
0
8
16  
24  
32  
40  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
V
= 20 V  
= 14 A  
V
= 10 V  
DS  
GS  
I
D
I = 14 A  
D
6
4
2
0
0
7
14  
21  
28  
35  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.04  
0.03  
0.02  
0.01  
0.00  
50  
10  
T
= 150_C  
J
I
D
= 14 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Document Number: 71188  
www.vishay.com  
S-03950—Rev. B, 16-May-03  
2-3  
Si4840DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.6  
60  
50  
0.4  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
I
D
= 250 mA  
40  
30  
20  
10  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
T
- Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71188  
www.vishay.com  
S-03950—Rev. B, 16-May-03  
2-4  

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