SI4850EY [VISHAY]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI4850EY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.022 @ V = 10 V
8.5
7.2
GS
60
0.031 @ V = 4.5 V
GS
D
SO-8
S
S
S
G
D
1
2
3
4
8
7
6
5
D
D
D
G
Top View
Ordering Information: Si4850EY
S
Si4850EY—E3 (Lead Free)
Si4850EY-T1 (with Tape and Reel)
Si4850EY-T1—E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
60
DS
GS
V
V
"20
T
= 25_C
= 70_C
8.5
7.1
6.0
5.0
A
a
Continuous Drain Current (T = 175_C)
I
J
D
T
A
A
Pulsed Drain Current
Avalanche Current
I
40
15
11
DM
I
AS
Repetitive Avalanche Energy
E
AS
mJ
T
= 25_C
= 70_C
3.3
2.3
1.7
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
36
75
17
45
90
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
www.vishay.com
1
Si4850EY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
60
1
(BR)DSS
GS
D
V
nA
mA
A
V
V
= V , I = 250 mA
GS(th)
DS GS D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
GSS
V
= 60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V = 0 V, T = 55_C
20
GS
J
a
On-State Drain Current
I
40
V
DS
w 5 V, V = 10 V
GS
D(on)
0.018
0.031
0.039
0.022
0.037
V
= 10 V, I = 6.0 A
D
GS
V
= 10 V, I = 6.0 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
0.047
0.031
V
GS
= 10 V, I = 6.0 A, T = 175_C
V
D
J
= 4.5 V, I = 5.1 A
0.025
25
GS
D
a
Forward Transconductance
g
fs
V
I
= 15 V, I = 6.0 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
= 1.7 A, V = 0 V
0.8
1.2
27
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
18
3.4
5.3
1.4
10
10
25
12
50
g
Q
Q
V
= 30 V, V = 10 V, I = 6.0 A
nC
gs
gd
DS
GS
D
V
=0.1 V, f = 5 MHz
R
g
0.5
2.4
20
20
50
24
80
W
GS
t
d(on)
t
r
V
= 30 V, R = 30 W
L
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN g
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 1.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 5 V
32
24
16
8
4 V
T
= 150_C
C
25_C
−55_C
3 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
www.vishay.com
2
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.06
1400
1200
1000
800
600
400
200
0
0.05
0.04
C
iss
V
GS
= 4.5 V
0.03
0.02
0.01
0.00
V
GS
= 10 V
C
oss
C
rss
0
8
16
24
32
40
0
10
20
30
40
50
60
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 30 V
V
GS
= 10 V
DS
I
= 6.0 A
I = 6.0 A
D
6
4
2
0
0
4
8
12
16
20
−50 −25
0
25
50
75 100 125 150 175
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
0.02
0.01
0.00
50
T
= 175_C
J
T
= 25_C
J
10
I
D
= 6.0 A
1
0.00
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
www.vishay.com
3
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.8
50
40
I
D
= 250 mA
0.4
0.0
30
20
10
0
−0.4
−0.8
−1.2
−50 −25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
Time (sec)
T
− Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 75_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
www.vishay.com
4
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