SI4874DY-T1 [VISHAY]

Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;


型号：	SI4874DY-T1
厂家：	VISHAY
描述：	Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
文件：	总5页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si4874DY

Vishay Siliconix

New Product

N-Channel Reduced Q_g, Fast Switching MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.0075 @ V = 10 V

"15

"13

0.010 @ V = 4.5 V

D D

SO-8

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

"15

= 25_C

= 70_C

a, b

Continuous Drain Current (T = 150__C)

"13

"50

Pulsed Drain Current

a, b

Continuous Source Current (Diode Conduction)

2.3

= 25_C

= 70_C

3.10

a, b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Maximum Junction-to-Ambient

thJA

thJC

C/W

Steady State

Maximum Junction-to-Foot

Notes

a. Surface Mounted on FR4 Board.

b. t v 10 sec.

Document Number: 70947

S99-040—Rev. B, 04-Oct-99

www.vishay.com S FaxBack 408-970-5600

2-1

Si4874DY

New Product

Vishay Siliconix

MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

= V , I = 250 mA

1.0

GS(th)

= 0 V, V = "20 V

"100

GSS

= 24 V, V = 0 V

Zero Gate Voltage Drain Current

DSS

= 24 V, V = 0 V, T = 55_C

On-State Drain Current

w 5 V, V = 10 V

D(on)

0.0062

0.0075

0.010

= 10 V, I = 15 A

Drain-Source On-State Resistance

DS(on)

= 4.5 V, I = 13 A

0.0083

Forward Transconductance

= 15 V, I = 15 A

Diode Forward Voltage

= 2.3 A, V = 0 V

0.73

1.1

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

12.2

11.4

= 15 V, V = 5.0 V, I = 15 A

d(on)

= 15 V, R = 15 W

= 10 V, R = 6 W

GEN G

^ 1 A, V

Turn-Off Delay Time

Fall Time

120

180

d(off)

Source-Drain Reverse Recovery Time

Notes

= 2.3 A, di/dt = 100 A/ms

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

Output Characteristics

Transfer Characteristics

= 10 thru 4 V

= 125_C

25_C

3 V

2 V

–55_C

0.5

1.0

V – Gate-to-Source Voltage (V)

1.5

2.0

2.5

3.0

3.5

4.0

– Drain-to-Source Voltage (V)

Document Number: 70947

S99-040—Rev. B, 04-Oct-99

www.vishay.com S FaxBack 408-970-5600

2-2

Si4874DY

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

On-Resistance vs. Drain Current

Capacitance

0.020

0.016

0.012

0.008

0.004

6000

5000

4000

3000

2000

1000

iss

= 4.5 V

= 10 V

oss

rss

– Drain Current (A)

– Drain-to-Source Voltage (V)

Gate Charge

On-Resistance vs. Junction Temperature

= 15 V

= 10 V

1.6

1.2

0.8

0.4

= 15

I = 15 A

–50 –25

100 125 150

– Total Gate Charge (nC)

T – Junction Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.05

0.04

0.03

0.02

0.01

= 15 A

T = 150_C

T = 25_C

0.2

0.4

0.6

0.8

1.0

1.2

– Source-to-Drain Voltage (V)

– Gate-to-Source Voltage (V)

Document Number: 70947

S99-040—Rev. B, 04-Oct-99

www.vishay.com S FaxBack 408-970-5600

2-3

Si4874DY

New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

Threshold Voltage

Single Pulse Power, Juncion-To-Ambient

0.6

100

0.4

0.2

= 250 mA

–0.0

–0.2

–0.4

–0.6

–0.8

–1.0

–50 –25

100 125 150

0.1

0.001

0.01

T – Temperature (_C)

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 68_C/W

thJA

(t)

3. T – T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

–4

–3

–2

–1

100

600

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

–4

–3

–2

–1

Square Wave Pulse Duration (sec)

Document Number: 70947

S99-040—Rev. B, 04-Oct-99

www.vishay.com S FaxBack 408-970-5600

2-4

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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therein, which apply to these products.

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Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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