SI4906DY-T1-GE3 [VISHAY]
MOSFET 2N-CH 40V 6.6A 8-SOIC;
| 型号： | SI4906DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET 2N-CH 40V 6.6A 8-SOIC |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4906DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
0.039 at VGS = 10 V
0.050 at VGS = 4.5 V
6.6
5.8
•
•
•
N-Channel
40
6.6
APPLICATIONS
CCFL Inverter
•
D
1
D
2
SO-8
S
1
D
1
D
1
D
2
D
2
1
8
7
6
5
G
1
2
3
4
S
2
G
G
2
1
G
2
Top View
S
1
S
2
Ordering Information: Si4906DY-T1-E3 (Lead (Pb)-free)
Si4906DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
40
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
16
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
6.6
5.3
Continuous Drain Current (TJ = 150 °C)
ID
5.3b, c
4.2b, c
30
TA = 70 °C
IDM
IS
A
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
T
C = 25 °C
A = 25 °C
2.5
1.7b, c
T
ISM
IAS
30
13
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
EAS
8.5
mJ
W
3.1
TC = 25 °C
TC = 70 °C
TA = 25 °C
2
2b, c
PD
Maximum Power Dissipation
1.28b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Typical
52
Maximum
62.5
Unit
t ≤ 10 s
Steady State
°C/W
32
40
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
1
Si4906DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
40
V
V
DS Temperature Coefficient
40
mV/°C
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
- 4.6
VDS = VGS, ID = 250 µA
0.8
20
2.2
100
1
V
IGSS
VDS = 0 V, VGS
=
16 V
nA
VDS = 40 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
DS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 4 A
VDS = 15 V, ID = 5 A
0.032
0.041
15
0.039
0.050
Drain-Source On-State Resistanceb
Ω
S
Forward Transconductanceb
Dynamica
Ciss
Coss
Crss
Input Capacitance
625
88
50
14.4
6.6
1.6
2.3
2.3
9
VDS = 20 V, VGS = 0 V, f = 1 MHz
DS = 20 V, VGS = 10 V, ID = 5 A
Output Capacitance
Reverse Transfer Capacitance
pF
V
22
10
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
V
DS = 20 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
3.5
15
77
32
10
20
128
26
11
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 20 V, RL = 4 Ω
51
21
6
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
13
85
17
7
V
DD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 1.7 A
2.5
30
A
Body Diode Voltage
0.79
30
1.2
45
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
30
45
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
17
ns
tb
13
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
2.0
1.6
1.2
0.8
0.4
0.0
V
= 10 V thru 4 V
GS
3 V
T
C
= 125 °C
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.8
1.6
2.4
3.2
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
0.052
0.044
0.036
0.028
0.020
900
720
540
360
180
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
4
8
12
16
20
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.8
1.5
1.2
0.9
0.6
I
D
= 5 A
I
D
= 5 A
V
GS
= 10 V
V
DS
= 10 V
V
= 30 V
DS
6
V
GS
= 4.5 V
V
DS
= 20 V
4
2
0
0
3
6
9
12
15
- 50 - 25
0
T
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
3
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
0.24
0.18
0.12
0.06
0.00
100
10
T
= 150 °C
J
25 °C
1
125 °C
25 °C
0.1
0
2
4
6
8
10
0.0
0.2
0.6
0.8
1.0
1.2
0.4
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
V
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
100
80
I
= 250 µA
D
0.2
0.0
60
I
D
= 5 mA
- 0.2
- 0.4
- 0.6
40
20
0
- 50 - 25
0
25
50
75
100 125 150
10
0.01
0.1
1
0.001
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
DS(on)*
10
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
1
100
10
V
DS
- Drain-to-Source Voltage (V)
* V
minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
6
5
3
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
3.2
2.4
1.6
0.8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
5
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 120 °C/W
thJA
(t)
3. T - T = P
Z
A
JM
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73867.
www.vishay.com
6
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SI4908DY-T1-GE3
Small Signal Field-Effect Transistor, 5A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4911DY-T1
TRANSISTOR 6300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOP-8, FET General Purpose Small Signal
VISHAY
SI4913DY-T1-E3
TRANSISTOR 7100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY
SI4913DY-T1-GE3
TRANSISTOR 7100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明