SI4925BDY [VISHAY]
Dual P-Channel 30-V (D-S) MOSFET; 双P通道30 - V（D -S）的MOSFET
| 型号： | SI4925BDY |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.025 @ V = -10 V
-7.1
-5.5
GS
-30
D Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
0.041 @ V = -4.5
GS
V
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
1
1
2
2
G
G
2
1
7
6
5
G
Top View
D
1
D
2
Ordering Information: Si4925BDY
Si4925BDY-T1 (with Tape and Reel)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-30
DS
V
V
GS
"20
T
= 25_C
= 70_C
-5.3
-4.3
-7.1
-5.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-40
DM
a
continuous Source Current (Diode Conduction)
I
-1.7
2.0
-0.9
1.1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
50
85
30
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
Si4925BDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-1
-3
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= -30 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -30 V, V = 0 V, T = 55_C
-25
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -10 V
-40
A
D(on)
GS
V
= -10 V, I = -7.1 A
0.020
0.033
0.025
0.041
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -4.5 V, I = -5.5 A
D
GS
a
Forward Transconductance
g
20
S
V
V
= -10 V, I = -7.1 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= -1.7 A, V = 0 V
-0.8
-1.2
50
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
33
5.4
8.9
9
g
Q
Q
V
= -15 V, V = -10 V, I = -7.1 A
nC
ns
gs
gd
DS
GS
D
t
15
20
90
50
60
d(on)
t
12
60
34
30
r
V
= -15 V, R = 15 W
L
GEN G
DD
I
D
^ -1 A, V
= -10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = -1.7 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
30
20
10
0
T
= -55_C
C
V
= 10 thru 5 V
GS
25_C
30
20
10
0
4 V
125_C
3, 2 V
4
0
1
2
3
5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
2
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2500
2000
1500
1000
500
0.08
0.06
C
iss
V
GS
= 4.5 V
0.04
0.02
0.00
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
0
6
12
18
24
30
I
D
- Drain Current (A)
Gate Charge
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 7.1 A
I = 7.1 A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
50
10
I
D
= 7.1 A
T
= 150_C
J
I
D
= 3 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
3
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
30
25
20
0.6
I
D
= 250 mA
0.4
0.2
15
10
0.0
-0.2
5
0
-0.4
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area
100
r
Limited
I
Limited
DS(on)
DM
P(t) = 0.0001
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
T
A
= 25_C
P(t) = 1
0.1
P(t) = 10
Single Pulse
dc
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85_C/W
thJA
(t)
3. T
- T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
4
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
5
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