SI5401DC-T1-E3 [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI5401DC-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5401DC
Vishay Siliconix
New Product
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D Ultra-Low On-Resistance
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
D Thermally Enhanced ChipFETr Package
D 40% Smaller Footprint Than TSOP-6
APPLICATIONS
0.032 @ V = −4.5 V
−7.1
−6.4
−5.5
GS
−20
0.040 @ V = −2.5 V
16.5
GS
0.053 @ V = −1.8 V
GS
D Load Switch, PA Switch, and Battery Switch
for Portable Devices
1206-8 ChipFETr
1
S
D
D
D
D
D
G
Marking Code
BO XXX
D
G
S
Lot Traceability
and Date Code
Part # Code
D
Bottom View
P-Channel MOSFET
Ordering Information: Si5401DC-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"8
T
= 25_C
= 85_C
−5.2
−3.7
−7.1
−5.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
Continuous Source Current
I
−2.1
2.5
−1.1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
−55 to 150
J
stg
_C
b, c
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
40
80
15
50
95
20
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
1
Si5401DC
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.40
−1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
p−5 V, V = −4.5 V
−20
A
D(on)
GS
V
= −4.5 V, I = −5.2 A
0.026
0.033
0.044
0.032
0.040
0.053
GS
D
a
V
= −2.5 V, I = −4.6 A
Drain-Source On-State Resistance
r
W
GS
GS
D
DS(on)
V
= −1.8 V, I = −1.9 A
D
a
Forward Transconductance
g
20
S
V
V
= −10 V, I = −5.2 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1.1 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Q
25
16.5
g
V
= −10 V, V = −4.5 V, I = −5.2 A
nC
DS
GS
D
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
1.7
3.5
9
gs
gd
R
f = 1 MHz
W
g
t
10
15
40
d(on)
t
25
r
V
= −10 V, R = 10 W
L
GEN g
DD
I
D
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
115
70
175
105
60
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
t
rr
30
I
F
= −1.1 A, di/dt = 100 A/ms
Q
140
nC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
T
= −55_C
25_C
C
V
GS
= 5 thru 2 V
125_C
1.5 V
4
4
1 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
2
Si5401DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2000
1800
1600
1400
1200
1000
800
0.10
0.08
0.06
C
iss
V
GS
= 1.8 V
V
= 2.5 V
GS
0.04
0.02
0.00
600
C
400
oss
V
= 4.5 V
GS
200
C
rss
0
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V, 2.5 V, 1.8 V
DS
GS
I
= 5.2 A
I = 5.2 A
D
0
4
8
12
16
20
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
= 5.2 A
D
T
= 150_C
J
T
= 125_C
J
T
= 125_C
J
T
= 25_C
J
T
= 25_C
J
1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
SD
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
3
Si5401DC
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
30
0.3
I
D
= 250 mA
0.2
0.1
20
10
0
0.0
−0.1
−0.2
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
*r
DS(on)
Limited
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25_C
C
P(t) = 10
dc
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
4
Si5401DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73225.
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
5
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