SI5511DC-T1-E3 [VISHAY]
N- and P-Channel 30-V (D-S) MOSFET; N和P通道30 - V（D -S）的MOSFET
| 型号： | SI5511DC-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 文件： | 总12页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5511DC
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETs
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)
4a,g
4a,g
- 3.6a
- 2.7a
0.055 at VGS = 4.5 V
0.090 at VGS = 2.5 V
0.150 at VGS = - 4.5 V
0.256 at VGS = - 2.5 V
APPLICATIONS
RoHS
N-Channel
P-Channel
30
4.2 nC
COMPLIANT
•
Buck-Boost
- DSC
- 30
2.85 nC
- Portable Devices
1206-8 Chip-FET®
D
1
S
2
1
S
1
D
1
G
1
G
2
Marking Code
EE XXX
D
1
S
2
G
1
D
2
G
2
Lot Traceability
and Date Code
D
2
Part # Code
S
1
D
2
Bottom View
Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
VGS
30
- 30
Drain-Source Voltage
Gate-Source Voltage
V
12
4a, g
4a, g
4a, g
3.9a
15
- 3.6a
- 2.8a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Drain Current (TJ = 150 °C)
- 2.3b, c
- 1.8b, c
- 10
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.6
1.7b, c
3.1
- 2.6
- 1.7b, c
2.6
Source Drain Current Diode Current
2.0
1.7
PD
Maximum Power Dissipation
W
2.1b, c
1.33b, c
1.3b, c
0.84b, c
TJ, Tstg
- 55 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ Max
P-Channel
Typ Max
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
Unit
t ≤ 5 s
50
30
60
40
77
33
95
40
°C/W
RthJF
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 s
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade
bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
1
Si5511DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typa
Max
Unit
Static
VGS = 0 V, ID = 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
30
VDS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = - 250 µA
- 30
ID = 250 µA
24.2
- 23.1
3.6
V
DS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
I
I
D = - 250 µA
ID = 250 µA
D = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
2.3
VDS = VGS, ID = 250 µA
DS = VGS, ID = - 250 µA
0.7
2
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
P-Ch
N-Ch
P-Ch
N-Ch
- 0.7
- 2
100
- 100
1
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 30 V, VGS = 0 V
V
DS = - 30 V, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 1
10
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
DS = 30 V, VGS = 0 V, TJ = 55 °C
V
DS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = 4.5 V
- 10
15
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 4.8 A
- 10
0.045 0.055
0.125 0.150
0.075 0.090
0.213 0.256
10.8
V
GS = - 4.5 V, ID = - 2.3 A
GS = 2.5 V, ID = 3.8 A
GS = - 2.5 V, ID = 1.8 A
VDS = 15 V, ID = 4.8 A
Drain-Source On-State Resistanceb
Ω
S
V
V
Forward Transconductanceb
V
DS = - 15 V, ID = - 2.3 A
6.56
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
435
260
65
Ciss
Coss
Crss
Input Capacitance
N-Channel
DS = 15 V, VGS = 0 V, f = 1 MHz
V
Output Capacitance
pF
55
P-Channel
DS = - 15 V, VGS = 0 V, f = 1 MHz
30
V
Reverse Transfer Capacitance
42
VDS = 15 V, VGS = 5 V, ID = 4.8 A
4.7
7.1
VDS = - 15 V, VGS = - 5 V, ID = - 3.2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.1
4.2
3.8
1.1
0.6
0.9
1.85
2.7
7.7
6.2
6.3
4.6
Qg
Total Gate Charge
N-Channel
nC
V
DS = 15 V, VGS = 4.5 V, ID = 4.8 A
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
V
DS = - 15 V, VGS = - 4.5 V, ID = - 3.2 A
f = 1 MHz
Ω
www.vishay.com
2
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Si5511DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Dynamica
Symbol
Test Conditions
Min
Typa
Max
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
12
23
68
117
72
50
42
98
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
N-Channel
DD = 15 V, RL = 3.95 Ω
ID ≅ 3.8 A, VGEN = 4.5 V, Rg = 1 Ω
15
45
78
48
33
28
65
V
ns
P-Channel
DD = - 15 V, RL = 18.1 Ω
ID ≅ - 1.86 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
V
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2.6
- 2.6
15
IS
TC = 25 °C
A
V
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
- 10
1.2
IS = 2.4 A, VGS = 0 V
0.8
VSD
I
S = - 1.5 A, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.8
11.6
19.8
6.1
- 1.2
18
trr
Qrr
ta
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
30
N-Channel
IF = 2.4 A, di/dt = 100 A/µs, TJ = 25 °C
9.2
27
nC
17.5
8.4
P-Channel
IF = - 1.5 A, di/dt = - 100 A/µs, TJ = 25 °C
17.2
3.2
ns
tb
Reverse Recovery Rise Time
2.6
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
3
Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
12
9
5
4
3
2
1
0
V
GS
= 5 V thru 3 V
V
= 2.5 V
GS
6
T
= 125 °C
C
V
V
= 2 V
GS
3
T
= 25 °C
1.0
C
= 1.5 V
GS
T
= - 55 °C
C
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.5
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
600
500
400
300
200
100
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
3
6
9
12
15
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 4.5 V
GS
= 4.8 A
I
D
= 4.8 A
I
4
3
2
1
0
V
DS
= 15 V
V
D
= 2.5 V
GS
= 3.7 A
I
V
GS
= 24 V
0
1
2
3
4
5
6
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
0.10
0.08
0.06
0.04
0.02
20
10
I
= 4.8 A
D
T
A
= 150 °C
1
0.1
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
I
D
= 250 µA
20
10
0
-4
-3
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
10
10
Time (s)
Single Pulse Power
1
10
100 600
T
- Temperature (°C)
J
Threshold Voltage
100
10
Limited by r
*
DS(on)
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
DC
BVDSS Limited
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
5
Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
3
2
1
0
8
6
4
2
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Power Derating
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
7
Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
5
4
3
2
1
0
V
GS
= 5 V thru 3.5 V
V
GS
= 3 V
6
V
GS
= 2.5 V
4
V
GS
= 2 V
T
A
= 125 °C
2
T
A
= 25 °C
V
GS
= 1.5 V
T
A
= - 55 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.6
1.2
1.8
2.4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
500
400
300
200
100
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 2.3 A
V
D
= 4.5 V,
GS
= 2.3 A
4
3
2
1
0
I
V
GS
= 15 V
V
GS
= 24 V
V
D
= 2.5 V,
GS
= 1.8 A
I
0
1
2
3
4
5
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
8
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.40
0.32
0.24
0.16
0.08
0.00
20
10
I
D
= 2.3 A
T
= 150 °C
J
T
A
= 125 °C
1
0.1
T
= 25 °C
J
T
A
= 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
40
I
= 250 µA
D
30
20
10
0
10
2
3
-4
-3
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
10
Time (s)
Single Pulse Power
10
1
10
10
T
- Temperature (°C)
J
Threshold Voltage
100
Limited by r
*
DS(on)
10
1
10 ms
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
0.01
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Case
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
9
Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
1.2
0.8
0.4
0.0
4
3
2
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Power Derating
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73787.
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI5511DC-T1-GE3
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
VISHAY
SI5513DC-T1-GE3
TRANSISTOR 3100 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明