SI5915DC-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor,;
| 型号： | SI5915DC-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si5915DC
Vishay Siliconix
Dual P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 4.6
- 3.7
- 3.0
Definition
0.070 at VGS = - 4.5 V
0.108 at VGS = - 2.5 V
0.162 at VGS = - 1.8 V
•
•
•
•
TrenchFET® Power MOSFET
Low Thermal Resistance
40 % Smaller Footprint than TSOP-6
Compliant to RoHS Directive 2002/95/EC
- 8
APPLICATIONS
Load Switch or PA Switch for Portable Devices
1206-8 ChipFET®
•
S
1
S
2
1
S
1
D
1
G
1
Marking Code
D
1
S
2
DE XX
G
G
2
1
Lot Traceability
and Date Code
D
2
G
2
D
2
Part # Code
Bottom View
Ordering Information: Si5915DC-T1-E3 (Lead (Pb)-free)
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
Si5915DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 8
8
V
VGS
TA = 25 °C
TA = 85 °C
- 4.6
- 3.3
- 3.4
- 2.5
Continuous Drain Current (TJ = 150 °C)a
ID
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
IS
- 10
- 1.8
2.1
- 0.9
1.1
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 85 °C
1.1
0.6
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
50
Maximum
Unit
t ≤ 5 s
60
110
40
Maximum Junction-to-Ambienta
Steady State
Steady State
90
°C/W
Maximum Junction-to-Foot (Drain)
RthJF
30
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure ade-
quate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70693
S10-0936-Rev. C, 19-Apr-10
www.vishay.com
1
Si5915DC
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
- 0.45
V
VDS = 0 V, VGS
=
8 V
100
- 1
nA
VDS = - 6.4 V, VGS = 0 V
DS = - 6.4 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 3.4 A
VGS = - 2.5 V, ID = - 2.7 A
VGS = - 1.8 V, ID = - 1 A
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
µA
A
V
- 5
ID(on)
- 10
0.058
0.090
0.131
8
0.070
0.108
0.162
Drain-Source On-State Resistancea
RDS(on)
Ω
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 5 V, ID = - 3.4 A
S
V
VSD
IS = - 0.9 A, VGS = 0 V
- 0.8
- 1.2
9
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
5.9
1.3
1.4
20
70
35
35
30
VDS = - 4 V, VGS = - 4.5 V, ID = - 3.4 A
nC
ns
30
110
55
V
DD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
55
Source-Drain Reverse Recovery Time
trr
IF = - 0.9 A, dI/dt = 100 A/µs
60
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
8
T
= - 55 °C
C
V
GS
= 5 V thru 2.5 V
25 °C
8
2 V
125 °C
6
6
4
4
1.5 V
2
2
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 70693
S10-0936-Rev. C, 19-Apr-10
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
800
600
400
200
0
0.25
V
GS
= 1.8 V
0.20
0.15
0.10
0.05
0.00
C
iss
V
GS
= 2.5 V
C
oss
C
V
GS
= 4.5 V
rss
0
2
4
6
8
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 4 V
= 3.4 A
V
= 4.5 V
DS
GS
I
D
I = 3.4 A
D
0
1
2
3
4
5
6
7
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.25
0.20
0.15
0.10
0.05
0.00
10
I
D
= 1 A
T
= 150 °C
J
I
= 3.4 A
D
T
= 25 °C
1.0
J
1
0
0.2
V
0.4
0.6
0.8
1.2
1.4
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Document Number: 70693
S10-0936-Rev. C, 19-Apr-10
www.vishay.com
3
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.3
50
40
30
0.2
I
D
= 250 µA
0.1
0.0
20
10
0
- 0.1
- 0.2
-4
-3
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
10
10
1
10
100 600
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T -- T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70693.
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4
Document Number: 70693
S10-0936-Rev. C, 19-Apr-10
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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