SI6415DQ-E3 [VISHAY]
TRANSISTOR 6.5 A, 30 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose Power;
| 型号： | SI6415DQ-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 6.5 A, 30 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose Power 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6415DQ
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.019 @ V = –10 V
"6.5
"5.2
GS
–30
0.030 @ V = –4.5 V
GS
S*
TSSOP-8
G
D
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
S
S
Si6415DQ
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–30
DS
GS
V
V
"20
T
= 25_C
= 70_C
"6.5
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
"5.2
"30
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
–1.5
T
= 25_C
= 70_C
1.5
A
a
Maximum Power Dissipation
P
D
W
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
83
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70639
S-49519—Rev. B, 18-Dec-96
www.vishay.com S FaxBack 408-970-5600
2-1
Si6415DQ
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= –30 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –30 V, V = 0 V, T = 55_C
–25
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –10 V
–20
A
D(on)
GS
V
= –10 V, I = –6.5 A
0.015
0.022
0.019
0.030
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= –4.5 V, I = –5.2 A
D
a
Forward Transconductance
g
V
= –15 V, I = –6.5 A
18.5
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= –1.5 A, V = 0 V
–0.75
–1.2
70
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
47
9.5
8
g
Q
gs
Q
gd
V
= –15 V, V = –10 V, I = –6.5 A
nC
ns
DS
GS
D
t
16
17
73
31
40
30
30
d(on)
t
r
V
= –15 V, R = 15 W
L
= –10 V, R = 6 W
GEN G
DD
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
110
60
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= –1.5 A, di/dt = 100 A/ms
60
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70639
S-49519—Rev. B, 18-Dec-96
www.vishay.com S FaxBack 408-970-5600
2-2
Si6415DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
25
20
15
10
5
30
V
GS
= 10 thru 4 V
25
20
15
10
5
T
C
= 125_C
3 V
25_C
–55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.035
0.028
0.021
0.014
0.007
0
4500
3600
2700
1800
900
V
GS
= 4.5 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
0
6
12
18
24
30
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 6.5 A
V
= 10 V
GS
= 6.5 A
DS
D
I
D
6
4
2
0
0
10
20
30
40
50
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70639
S-49519—Rev. B, 18-Dec-96
www.vishay.com S FaxBack 408-970-5600
2-3
Si6415DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
20
0.08
0.06
0.04
0.02
0
10
T = 150_C
J
T = 25_C
J
I
D
= 6.5 A
1
0
2
4
6
8
10
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.8
0.6
60
50
0.4
I
D
= 250 mA
40
0.2
30
20
–0.0
–0.2
–0.4
–0.6
10
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
2
0.02
= 83_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70639
S-49519—Rev. B, 18-Dec-96
www.vishay.com S FaxBack 408-970-5600
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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