SI6433BDQ_08 [VISHAY]

P-Channel 2.5-V (G-S) MOSFET; P沟道2.5 -V （G -S ）的MOSFET


型号：	SI6433BDQ_08
厂家：	VISHAY
描述：	P-Channel 2.5-V (G-S) MOSFET P沟道2.5 -V （G -S ）的MOSFET
文件：	总6页 (文件大小：101K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si6433BDQ

Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 4.8

- 3.6

0.040 at V_GS= - 4.5 V

0.070 at V_GS= - 2.5 V

- 12

RoHS

COMPLIANT

TSSOP-8

* Source Pins 2, 3, 6 and 7

must be tied common.

Top View

Ordering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 12

V_GS

T_A= 25 °C

T_A= 70 °C

- 4.8

- 3.9

- 4.0

- 3.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

- 20

Continuous Source Current (Diode Conduction)^a

- 1.35

1.5

- 0.95

1.05

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

1.0

0.67

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

120

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

100

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

www.vishay.com

Si6433BDQ

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_GS(th)

I_GSS

V_DS= V_GS, I_D= - 250 µA

Gate Threshold Voltage

- 0.6

- 1.5

100

- 1

V_DS= 0 V, V_GS

8 V

Gate-Body Leakage

V_DS= - 12 V, V_GS= 0 V

_DS= - 12 V, V_GS= 0 V, T_J= 70 °C

V_DS= - 5 V, V_GS= - 4.5 V

V_GS= - 4.5 V, I_D= - 4.8 A

I_DSS

I_D(on)

Zero Gate Voltage Drain Current

µA

- 25

On-State Drain Current^a

- 20

0.032

0.053

0.040

0.070

Drain-Source On-State Resistance^a

R_DS(on)

_GS= - 2.5 V, I_D= - 3.6 A

Forward Transconductance^a

Diode Forward Voltage^a

Dynamic^b

g_fs

V_DS= - 5 V, I_D= - 4.8 A

I_S= - 1.35 A, V_GS= 0 V

V_SD

- 0.77

- 1.1

Q_g

Q_gs

Q_gd

R_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

1.8

_DS= - 6 V, V_GS= - 4.5 V, I_D= - 4.8 A

f = 1 MHz

7.7

t_d(on)

t_r

t_d(off)

t_f

_DD= - 6 V, R_L= 6 Ω

I_D≅ - 1 A, V_GEN= - 4.5 V, R_g= 6 Ω

Turn-Off Delay Time

Fall Time

110

t_rr

I_F= - 1.35 A, di/dt = 100 A/µs

Source-Drain Reverse Recovery Time

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

= 4.5 thru 3 V

2.5 V

= 125 °C

2 V

25 °C

- 55 °C

2.0

0.0

0.5

1.0

1.5

2.5

3.0

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

www.vishay.com

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

Si6433BDQ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1500

1200

900

600

300

0.10

0.08

iss

= 2.5 V

0.06

0.04

0.02

0.00

= 4.5 V

oss

rss

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

1.6

1.4

1.2

1.0

0.8

0.6

= 4.5 V

= 6 V

= 4.8 A

- 50 - 25

100 125 150

T - Junction Temperature (°C)

- Total Gate Charge (nC)

Gate Charge

On-Resistance vs. Junction Temperature

0.15

0.12

0.09

0.06

0.03

0.00

= 150 °C

= 4.8 A

= 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

- Gate-to-Source Voltage (V)

- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

www.vishay.com

Si6433BDQ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4

0.3

0.2

= 250 µA

0.1

0.0

- 0.1

- 0.2

-3

-2

-1

- 50 - 25

100 125 150

Time (s)

Single Pulse Power, Junction-to-Ambient

- Temperature (°C)

Threshold Voltage

100

Limited

by R

1 ms

DS(on)

10 ms

100 ms

1 s

10 s

0.1

= 25 °C

Single Pulse

0.01

0.1

100

is specified

(on)

- Drain-to-Source Voltage (V)

* V > minimum V at which R

Safe Operating Area, Junction-to-Case

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 100 °C/W

thJA

(t)

3. T_JM-T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

Si6433BDQ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?72511.

Document Number: 72511

S-80682-Rev. C, 31-Mar-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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