SI6459DQ [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI6459DQ |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6459DQ
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.120 @ V = –10 V
"2.6
"2.4
GS
–60
0.150 @ V = –4.5 V
GS
S*
TSSOP-8
Si6459DQ
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
* Source Pins 2, 3, 6 and 7
must be tied common.
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–60
DS
GS
V
V
"20
T
= 25_C
= 70_C
"2.6
"2.1
"30
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
–1.25
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
83
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70186
S-99446—Rev. D, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si6459DQ
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= –60 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –60 V, V = 0 V, T = 70_C
–25
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –10 V
–20
A
D(on)
GS
V
= –10 V, I = –2.6 A
0.100
0.125
0.120
0.150
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= –4.5 V, I = –2.4 A
D
a
Forward Transconductance
g
V
= –15 V, I = –2.6 A
7.5
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= –1.25 A, V = 0 V
–0.8
–1.2
25
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
16
3.7
2.0
8
g
Q
gs
Q
gd
V
= –30 V, V = –10 V, I = –2.6 A
nC
ns
DS
GS
D
t
15
20
50
25
90
d(on)
t
10
35
12
60
r
V
= –30 V, R = 30 W
L
= –10 V, R = 6 W
GEN G
DD
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –1.25 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70186
S-99446—Rev. D, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si6459DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
20
16
12
8
T
C
= –55_C
V
GS
= 10 thru 6 V
24
18
12
6
25_C
125_C
5 V
4 V
3 V
4
0
0
0
1
2
3
4
5
6
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.0
0.8
0.6
0.4
0.2
0
1400
1200
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.85
1.60
1.35
1.10
0.85
0.60
V
= 30 V
= 2.6 A
V
GS
= 10 V
DS
I
D
I = 2.6 A
D
6
4
2
0
0
4
8
12
16
20
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70186
S-99446—Rev. D, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si6459DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
0.2
0.1
0
20
10
T = 150_C
J
I
D
= 2.6 A
T = 25_C
J
1
2
4
6
8
10
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
50
0.75
T
= 25_C
C
Single Pulse
40
30
20
10
0.50
0.25
I
D
= 250 mA
0.00
–0.25
0
–50 –25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
30
Time (sec)
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
0.1
DM
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 83_C/W
0.02
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70186
S-99446—Rev. D, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-4
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