SI6473DQ-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,;型号: | SI6473DQ-T1-GE3 |
厂家: | VISHAY |
描述: | Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, |
文件: | 总5页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si6473DQ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
- 9.5
- 8.5
- 7.3
•
TrenchFET® Power MOSFETs
0.0125 at VGS = - 4.5 V
0.016 at VGS = - 2.5 V
0.0215 at VGS = - 1.8 V
RoHS
- 20
COMPLIANT
S*
G
TSSOP-8
* Source Pins 2, 3, 6 and 7
must be tied common.
D
S
S
G
D
S
S
D
1
8
7
6
5
2
Si6473DQ
3
4
D
Top View
P-Channel MOSFET
Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
VGS
TA = 25 °C
TA = 70 °C
- 9.5
- 5.9
- 6.2
- 4.9
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
- 30
Continuous Source Current (Diode Conduction)a
- 1.5
1.75
1.14
- 0.95
1.08
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
0.69
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
55
Maximum
Unit
t ≤ 10 s
70
115
45
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
95
°C/W
RthJF
35
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71164
S-81056-Rev. C, 12-May-08
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1
Si6473DQ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.45
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
100
- 1
nA
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
µA
A
- 10
On-State Drain Currenta
ID(on)
20
VGS = - 4.5 V, ID = - 9.5 A
0.010
0.013
0.0175
45
0.0125
0.016
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 2.5 V, ID = - 8.5 A
GS = - 1.8 V, ID = - 7.5 A
Ω
0.0215
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = - 15 V, ID = - 9.5 A
IS = - 1.5 A, VGS = 0 V
S
V
VSD
- 0.64
- 1.1
70
Dynamicb
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
47.5
7.6
7.6
42
V
DS = - 10 V, VGS = - 5 V, ID = - 9.5 A
nC
ns
60
50
33
V
DD = - 10 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
220
95
330
140
80
trr
IF = - 1.5 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
50
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
30
24
18
12
6
V
GS
= 5 thru 2 V
1.5 V
T
C
= 125 °C
25 °C
1 V
- 55 °C
1.5
0
0
0
0.5
GS
1.0
2.0
0
3
6
9
12
V
- Gate-to-Source Voltage (V)
V
DS
-
Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71164
S-81056-Rev. C, 12-May-08
Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
10000
8000
6000
4000
2000
0
0.025
C
iss
0.020
0.015
0.010
0.005
0
V
= 1.8 V
GS
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
6
12
18
24
30
0
3
6
9
12
15
I
- Drain Current (A)
V
DS
-
Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 10 V
= 9.5 A
V
I
= 4.5 V
= 9.5 A
DS
D
GS
D
0
10
20
30
40
50
- 50 - 25
0
25
50
75
100 125 150
Q
g
-
Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
0.04
0.03
0.02
0.01
0
30
10
T = 150 °C
J
I
D
= 9.5 A
T = 25 °C
J
1
0
2
4
6
8
0
0.2
0.4
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
SD
-
GS
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71164
S-81056-Rev. C, 12-May-08
www.vishay.com
3
Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
0.4
0.2
40
30
I
D
= 250 µA
0.0
- 0.2
- 0.4
20
10
0
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
100
T - Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 95 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71164.
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Document Number: 71164
S-81056-Rev. C, 12-May-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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