SI6542DQ [VISHAY]
Dual N- and P-Channel 20-V (D-S) MOSFET; 双N和P通道20 - V（D -S）的MOSFET
| 型号： | SI6542DQ |
| 厂家： | 
VISHAY |
| 描述： | Dual N- and P-Channel 20-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6542DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.09 @ V = 10 V
"2.5
"1.8
"1.9
"1.3
GS
N-Channel
P-Channel
20
0.175 @ V = 4.5 V
GS
0.17 @ V = –10 V
GS
–20
0.32 @ V = –4.5 V
GS
D
1
S
2
TSSOP-8
Si6542DQ
D
1
S
1
S
1
G
1
D
G
2
1
2
3
4
8
7
6
5
2
2
2
D
S
S
G
1
G
2
Top View
S
D
2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
20
–20
"20
"1.9
DS
GS
V
"20
"2.5
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
"2.0
"1.5
"15
A
Pulsed Drain Current
I
"20
DM
a
Continuous Source Current (Diode Conduction)
I
S
1.25
–1.25
T
= 25_C
= 70_C
1.0
A
a
Maximum Power Dissipation
P
W
D
T
A
0.64
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P-Channel
Unit
a
Maximum Junction-to-Ambient
R
thJA
125
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-1
Si6542DQ
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
= V , I = 250 mA
N-Ch
P-Ch
1.0
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = –250 mA
–1.0
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 20 V, V = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
DS
GS
V
DS
= –20 V, V = 0 V
–1
GS
Zero Gate Voltage Drain Current
I
mA
A
DSS
V
= 20 V, V = 0 V, T = 55_C
25
DS
GS
J
V
DS
= –20 V, V = 0 V, T = 55_C
–25
GS
J
V
DS
= 5 V, V = 10 V
14
GS
a
On-State Drain Current
I
D(on)
V
DS
= –5 V, V = –10 V
–10
GS
V
= 10 V, I = 2.5 A
0.065
0.13
0.100
0.26
5
0.09
0.17
GS
D
V
GS
= –10 V, I = 1.9 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
0.175
0.32
V
GS
= 4.5 V, I = 1.8 A
D
V
GS
= –4.5 V, I = 1.3 A
D
V
= 15 V, I = 2.5 A
D
DS
a
Forward Transconductance
g
S
V
fs
V
DS
= –15 V, I = – 1.9 A
3
D
I
S
= 1.25 A, V = 0 V
0.8
1.2
GS
a
Diode Forward Voltage
V
SD
I
S
= –1.25 A, V = 0 V
GS
0.8
–1.2
Dynamicb
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
7
10
10
Total Gate Charge
Q
g
N-Channel
V
= 10 V, V = 10 V, I = 2.5 A
0.9
1.3
2.1
1.7
11
9
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
Q
nC
gs
P-Channel
V
DS
= –10 V, V = –10 V, I = –1.9 A
GS D
gd
20
20
20
25
30
30
15
15
70
70
t
d(on)
N-Channel
11
12
16
17
6
V
= 10 V, R = 10 W
t
r
DD
L
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
P-Channel
= –10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
^ –1 A, V
= –10 V, R = 6 W
GEN G
t
f
6
I
= 1.25 A, di/dt = 100 A/ms
= –1.25 A, di/dt = 100 A/ms
45
35
F
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-2
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Output Characteristics
Transfer Characteristics
20
16
12
8
20
6 V
T
C
= –55_C
16
12
8
V
GS
= 10, 9 ,8 ,7 V
5 V
25_C
125_C
4 V
4
4
3 V
0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.30
0.25
0.20
0.15
0.10
0.05
0
1000
800
600
400
200
0
V
GS
= 4.5 V
C
iss
C
oss
V
GS
= 10 V
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.5
1.0
0.5
0
V
= 10 V
= 2.5 A
V
GS
= 10 V
GS
I
D
I = 2.5 A
D
6
4
2
0
0
1
2
3
4
5
6
7
8
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
T = 150_C
J
10
I
D
= 2.5 A
T = 25_C
J
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
1.0
120
100
0.5
0.0
80
60
40
I
D
= 250 µA
–0.5
20
–1.0
0
–50 –25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 125_C/W
thJA
0.02
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-4
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Output Characteristics
Transfer Characteristics
15
12
9
15
V
GS
= 10, 9 V
T
= –55_C
C
7 V
8 V
12
9
125_C
25_C
6 V
5 V
6
6
4 V
3
3
3 V
0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.5
0.4
0.3
0.2
0.1
0
1000
800
600
400
200
0
V
GS
= 4.5 V
C
iss
C
oss
V
GS
= 10 V
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.5
1.0
0.5
0
V
= 10 V
= 1.9 A
GS
V
= 10 V
= 1.9 A
GS
I
D
I
D
6
4
2
0
0
2
4
6
8
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-5
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
20
0.6
0.5
0.4
0.3
0.2
0.1
0
T = 150_C
J
10
T = 25_C
J
I
D
= 1.9 A
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
1.0
0.5
120
100
I
D
= 250 µA
80
60
40
0.0
–0.5
–1.0
20
0
–50 –25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 125_C/W
thJA
0.02
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com S FaxBack 408-970-5600
2-6
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