SI6911DQT-1-E3 [VISHAY]
TRANSISTOR 4300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal;
| 型号： | SI6911DQT-1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 4300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6911DQ
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
D Load Switch
0.026 @ V = -4.5 V
GS
-5.1
-4.5
-3.9
D Battery Switch
0.035 @ V = -2.5 V
GS
-12
0.046 @ V = -1.8 V
GS
S
S
1
2
TSSOP-8
G
1
G
2
D
1
D
1
8
2
2
2
D
S
S
S
S
1
1
1
2
3
4
7
6
5
G
G
2
Top View
Ordering Information: Si6911DQ T-1
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-12
DS
GS
V
V
"8
T
= 25_C
= 70_C
-5.1
-4.1
-4.3
-3.5
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
-30
DM
a
Continuous Source Current (Diode Conduction)
I
-1.0
1.14
0.73
-0.7
0.83
0.53
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
86
124
59
110
150
75
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
1
Si6911DQ
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -300 mA
-0.4
-0.9
V
GS(th)
DS
GS D
V
= 0 V, V = "8 V
GS
I
DS
"100
nA
GSS
V
= -9.6 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= -9.6 V, V = 0 V, T = 70_C
-25
DS
GS
J
a
On-State Drain Current
I
V
= -5 V, V = -4.5 V
-20
A
D(on)
DS
GS
V
= -4.5 V, I = -5.1 A
0.021
0.028
0.026
0.035
GS
GS
GS
D
W
W
a
V
V
= -2.5 V, I = -4.5 A
D
Drain-Source On-State Resistance
r
DS(on)
0.037
0.046
= -1.8 V, I = -3.9 A
D
a
Forward Transconductance
g
V
= -5 V, I = -5.1 A
20
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= -1.0 A, V = 0 V
-0.65
-1.1
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
16
1.9
3.9
35
24
g
Q
gs
Q
gd
V
= -6 V, V = -4.5 V, I = -5.1 A
nC
ns
DS
GS
D
t
55
d(on)
t
r
62
100
180
110
100
V
= -6 V, R = 6 W
L
DD
I
^ -1 A, V = -4.5 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
120
70
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/ms
65
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
T
C
= -55_C
V
= 5 thru 2.5 V
2 V
GS
25_C
24
18
12
6
125_C
1.5 V
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
2
Si6911DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10
2500
2000
1500
1000
500
0.08
0.06
C
iss
V
= 1.8 V
GS
0.04
0.02
0.00
V
V
= 2.5 V
GS
GS
C
oss
C
rss
= 4.5 V
24
0
0
6
12
18
30
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 5.1 A
V
= 4.5 V
GS
DS
I
D
I = 5.1 A
D
0
4
8
12
16
20
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
10
T = 150_C
J
I
D
= 5.1 A
T = 25_C
J
1
0.2
0.0
0.2
0.4
SD
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
3
Si6911DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
200
160
0.4
0.3
0.2
I
D
= 300 mA
120
80
0.1
0.0
40
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
10
1
Limited
by r
1 ms
DS(on)
10 ms
100 ms
T
C
= 25_C
0.1
1 s
10 s
dc
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 124_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
4
Si6911DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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