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SI6968BEDQ-T1-GE3 [VISHAY]

Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection; 双N沟道2.5 -V ( GS ) MOSFET漏极常见, ESD保护
SI6968BEDQ-T1-GE3
型号: SI6968BEDQ-T1-GE3
厂家: VISHAY    VISHAY
描述:

Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
双N沟道2.5 -V ( GS ) MOSFET漏极常见, ESD保护

晶体 小信号场效应晶体管 光电二极管
文件: 总11页 (文件大小:223K)
中文:  中文翻译
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