SI7141DP [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI7141DP |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si7141DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
- 60d
- 60d
0.0019 at VGS = - 10 V
0.0030 at VGS = - 4.5 V
•
•
•
•
- 20
128 nC
Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
S
APPLICATIONS
S
6.15 mm
5.15 mm
•
•
•
Adaptor Switch
Battery Switch
Load Switch
1
S
2
S
3
G
G
4
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
- 60d
- 60d
- 42.7b
- 34b
- 100
- 60d
- 5.6a, b
- 40
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
80
mJ
W
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
104
66.6
PD
Maximum Power Dissipation
6.25a, b
4.0a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
15
Maximum
Unit
Maximum Junction-to-Ambienta, c
t ≤ 10 s
Steady State
20
°C/W
Maximum Junction-to-Case
0.9
1.2
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
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1
New Product
Si7141DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 16
5.7
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1.0
- 40
- 2.3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 20 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
- 5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 25 A
0.0015
0.0024
103
0.0019
0.0030
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = - 4.5 V, ID = - 20 A
VDS = - 10 V, ID = - 25 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
14 300
2300
2600
265
128
36
VDS = - 10 V, VGS = 0 V, f = 1 MHz
DS = - 10 V, VGS = - 10 V, ID = - 20 A
pF
V
400
194
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
V
DS = - 10 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
42
0.4
1.7
3.4
50
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
25
V
DD = - 10 V, RL = 1 Ω
16
30
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
130
38
220
70
ns
Turn-On Delay Time
Rise Time
130
120
100
55
220
200
180
100
V
DD = - 10 V, RL = 1 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 60
- 100
- 1.1
80
A
Body Diode Voltage
IS = - 5 A, VGS = 0 V
- 0.71
42
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
36
72
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
18
ns
Reverse Recovery Rise Time
tb
24
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
New Product
Si7141DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
8
V
GS
= 10 V thru 4 V
80
60
40
20
0
6
V
= 3 V
GS
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= - 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.0030
0.0026
0.0022
0.0018
0.0014
0.0010
18 000
14 400
10 800
7200
3600
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
14
28
42
56
70
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
Capacitance
On-Resistance vs. Drain Current
1.5
1.3
1.1
0.9
0.7
10
8
I
= 20 A
D
I
= 25 A
D
V
GS
= 10 V
V
DS
= 10 V
6
V
DS
= 5 V
V
DS
= 15 V
V
GS
= 4.5 V
4
2
0
- 50 - 25
0
T
25
50
75
100 125 150
0
60
120
180
240
300
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
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New Product
Si7141DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.010
I
= 25 A
D
0.008
0.006
0.004
0.002
0.000
T
= 150 °C
J
T
J
= 25 °C
0.1
0.01
T
= 125 °C
J
T
= 25 °C
9
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
200
160
120
80
I
= 250 µA
D
0.4
I
= 5 mA
D
0.2
0.0
40
- 0.2
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
1 ms
10
10 ms
100 ms
1
1 s
10 s
DC
0.1
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
New Product
Si7141DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
160
120
80
Package Limited
40
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
125
100
75
50
25
0
3.0
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
www.vishay.com
5
New Product
Si7141DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 54 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65596.
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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