SI7336ADP [VISHAY]

SI7336ADP;
SI7336ADP
型号: SI7336ADP
厂家: VISHAY    VISHAY
描述:

SI7336ADP

文件: 总2页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Specification Comparison  
Vishay Siliconix  
Si7336ADP vs. Si7336DP  
Description: N-Channel MOSFET  
Package:  
Pin Out:  
PowerPAKr S0-8  
Identical  
Part Number Replacements:  
Si7336ADP-T1 Replaces Si7336DP-T1  
Lead (Pb)-Free: Si7336ADP-T1—E3 Replaces Si7336DP-T1—E3  
Summary of Performance:  
The Si7336ADP is the recommended replacement for the original Si7336DP. The Si7336ADP has lower on-resistance,  
otherwise, both part numbers perform identically.  
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Si7336ADP  
Si7336DP  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
18  
30  
"20  
18  
DS  
GS  
V
V
T = 25_C  
A
Continuous Drain Current*  
Pulsed Drain Current  
I
D
T = 70_C  
A
15  
15  
I
70  
70  
A
DM  
Continuous Source Current* (MOSFET Diode Conduction)  
I
S
1.8  
1.8  
Avalanche Current  
L = 1.0 mH  
I
50  
NS**  
1.9  
AS  
T = 25_C  
1.9  
A
Power Dissipation  
P
W
D
T = 70_C  
1.2  
1.2  
A
Operating Junction and Storage Temperature Range  
Maximum Junction-to-Ambient*  
T and T  
55 to 150  
65  
55 to 150  
65  
_C  
j
stg  
R
thJA  
R
thJA  
_C/W  
Maximum Junction-to-Case (Drain)*  
1.5  
1.5  
Note: * Indicates Steady State, all others are independent of time.  
** NS denotes parameter not specified in original data sheet.  
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)  
J
Si7336ADP  
Si7336DP  
Typ  
Min  
Typ  
Max  
Min  
Max  
Parameter  
Symbol  
Unit  
Static  
Gate-Threshold Voltage  
Gate-Body Leakage  
V
1.0  
3.0  
"100  
1
1.0  
30  
3.0  
"100  
1
V
nA  
mA  
A
GS(th)  
I
GSS  
Zero Gate Voltage Drain Current  
On-State Drain Current  
I
DSS  
V
V
= 10 V  
= 10 V  
= 4.5 V  
I
30  
GS  
GS  
GS  
D(on)  
0.0024  
0.0031  
110  
0.0030  
0.0040  
0.0026  
0.0033  
110  
0.00325  
0.0042  
Drain-Source On-Resistance  
r
W
DS(on)  
V
Forward Transconductance  
Diode Forward Voltage  
g
fs  
S
V
V
0.72  
1.1  
50  
0.72  
1.1  
50  
SD  
Dynamic  
Total Gate Charge  
Q
g
36  
18  
36  
18  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Q
gs  
Q
gd  
nC  
W
10  
10  
R
g
0.8  
1.3  
2.0  
0.8  
1.3  
2.0  
Input Capacitance  
C
C
5600  
860  
415  
5600  
860  
415  
iss  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
oss  
C
rss  
www.vishay.com  
Document Number: 73260  
05-Jan-05  
1
Specification Comparison  
Vishay Siliconix  
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)  
J
Si7336ADP  
Si7336DP  
Typ  
Min  
Typ  
Max  
Min  
Max  
Parameter  
Symbol  
Unit  
Switching  
t
t
24  
16  
90  
32  
45  
35  
25  
24  
16  
90  
32  
45  
35  
25  
d(on)  
Turn-On Time  
t
r
140  
50  
140  
50  
ns  
d(off)  
Turn-Off Time  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
70  
70  
Document Number: 73260  
05-Jan-05  
www.vishay.com  
2

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