SI7336ADP [VISHAY]
SI7336ADP;型号: | SI7336ADP |
厂家: | VISHAY |
描述: | SI7336ADP |
文件: | 总2页 (文件大小:36K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Specification Comparison
Vishay Siliconix
Si7336ADP vs. Si7336DP
Description: N-Channel MOSFET
Package:
Pin Out:
PowerPAKr S0-8
Identical
Part Number Replacements:
Si7336ADP-T1 Replaces Si7336DP-T1
Lead (Pb)-Free: Si7336ADP-T1—E3 Replaces Si7336DP-T1—E3
Summary of Performance:
The Si7336ADP is the recommended replacement for the original Si7336DP. The Si7336ADP has lower on-resistance,
otherwise, both part numbers perform identically.
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Si7336ADP
Si7336DP
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
18
30
"20
18
DS
GS
V
V
T = 25_C
A
Continuous Drain Current*
Pulsed Drain Current
I
D
T = 70_C
A
15
15
I
70
70
A
DM
Continuous Source Current* (MOSFET Diode Conduction)
I
S
1.8
1.8
Avalanche Current
L = 1.0 mH
I
50
NS**
1.9
AS
T = 25_C
1.9
A
Power Dissipation
P
W
D
T = 70_C
1.2
1.2
A
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
T and T
−55 to 150
65
−55 to 150
65
_C
j
stg
R
thJA
R
thJA
_C/W
Maximum Junction-to-Case (Drain)*
1.5
1.5
Note: * Indicates Steady State, all others are independent of time.
** NS denotes parameter not specified in original data sheet.
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Si7336ADP
Si7336DP
Typ
Min
Typ
Max
Min
Max
Parameter
Symbol
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
V
1.0
3.0
"100
1
1.0
30
3.0
"100
1
V
nA
mA
A
GS(th)
I
GSS
Zero Gate Voltage Drain Current
On-State Drain Current
I
DSS
V
V
= 10 V
= 10 V
= 4.5 V
I
30
GS
GS
GS
D(on)
0.0024
0.0031
110
0.0030
0.0040
0.0026
0.0033
110
0.00325
0.0042
Drain-Source On-Resistance
r
W
DS(on)
V
Forward Transconductance
Diode Forward Voltage
g
fs
S
V
V
0.72
1.1
50
0.72
1.1
50
SD
Dynamic
Total Gate Charge
Q
g
36
18
36
18
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
nC
W
10
10
R
g
0.8
1.3
2.0
0.8
1.3
2.0
Input Capacitance
C
C
5600
860
415
5600
860
415
iss
Output Capacitance
Reverse Transfer Capacitance
pF
oss
C
rss
www.vishay.com
Document Number: 73260
05-Jan-05
1
Specification Comparison
Vishay Siliconix
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Si7336ADP
Si7336DP
Typ
Min
Typ
Max
Min
Max
Parameter
Symbol
Unit
Switching
t
t
24
16
90
32
45
35
25
24
16
90
32
45
35
25
d(on)
Turn-On Time
t
r
140
50
140
50
ns
d(off)
Turn-Off Time
t
f
Source-Drain Reverse Recovery Time
t
rr
70
70
Document Number: 73260
05-Jan-05
www.vishay.com
2
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