SI7434DP-T1-E3 [VISHAY]
N-CHANNEL 250-V (D-S) MOSFET; N沟道250 -V （D -S ）的MOSFET
| 型号： | SI7434DP-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-CHANNEL 250-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7434DP
Vishay Siliconix
New Product
N-Channel 250-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D PWM-OptimizedTrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
D Avalanche Tested
APPLICATIONS
0.155 @ V = 10 V
GS
3.8
3.7
250
0.162 @ V = 6 V
GS
D Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7434DP-T1—E3
Creepage Clearance: 30 mils
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
250
DS
GS
V
V
"20
T
= 25_C
= 70_C
3.8
3.0
2.3
1.8
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current
I
40
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
4.3
1.6
S
L = 0.1 mH
I
AS
13
Single Pulse Avalanche Energy
E
8.4
mJ
AS
T
= 25_C
= 70_C
5.2
3.3
1.9
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
19
52
24
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.5
1.8
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
www.vishay.com
1
Si7434DP
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
4.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 250 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 250 V, V = 0 V, T = 55_C
15
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.129
0.131
0.155
0.162
V
= 10 V, I = 3.8 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6.0 V, I = 3.7 A
D
GS
a
Forward Transconductance
g
V
= 15 V, I = 3.8 A
14
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= 2.8 A, V = 0 V
0.75
1.2
50
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
34
6.8
10.5
1.2
16
g
Q
gs
Q
gd
V
= 100 V, V = 10 V, I = 3.8 A
nC
DS
GS
D
R
0.6
1.8
25
W
g
t
d(on)
t
23
35
r
V
= 100 V, R = 25 W
L
DD
I
D
^ 4.0 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
47
70
ns
d(off)
t
19
30
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.8 A, di/dt = 100 A/ms
100
150
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
40
35
30
25
20
15
10
5
V
= 10 thru 6 V
GS
24
18
12
6
5 V
T
C
= 125_C
25_C
−55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
www.vishay.com
2
Si7434DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.30
2500
2000
1500
1000
500
0.24
0.18
C
iss
V
= 6 V
GS
V
= 10 V
GS
0.12
0.06
0.00
C
oss
C
rss
0
0
8
16
24
32
40
35
1.2
0
50
100
150
200
250
I
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.5
2.0
1.5
1.0
0.5
V
D
= 100 V
= 3.8 A
V
D
= 10 V
GS
I = 3.8 A
DS
I
6
4
2
0
0
7
14
21
28
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
50
10
I
D
= 3.8 A
T = 150_C
J
T = 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
www.vishay.com
3
Si7434DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-to-Ambient
1.0
100
80
0.5
I
D
= 250 mA
60
0.0
−0.5
−1.0
−1.5
40
20
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
− Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited
DS(on)
10
1
by r
1 ms
10 ms
100 ms
1 s
0.1
0.01
10 s
dc
T
= 25_C
C
Single Pulse
0.001
0.1
1
10
100
1000
V
− Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
www.vishay.com
4
Si7434DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
www.vishay.com
5
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