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SI7456DP-E3 [VISHAY]

TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power;
SI7456DP-E3
型号： SI7456DP-E3
厂家： VISHAY    VISHAY
描述：

TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

开关 脉冲 晶体管
文件： 总4页 (文件大小：39K)
中文：  中文翻译
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Si7456DP  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D New Low Thermal Resistance PowerPAKt  
PRODUCT SUMMARY  
Package with Low 1.07-mm Profile  
D PWM Optimized for Fast Switching  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = 10 V  
GS  
9.3  
8.8  
100  
0.028 @ V = 6.0 V  
GS  
D Primary Side Switch for High Density DC/DC  
D Telecom/Server 48-V, Full-/Half-Bridge DC/DC  
D Industrial and 42-V Automotive  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
S
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
GS  
V
V
"20  
T
= 25_C  
= 85_C  
9.3  
6.7  
5.7  
4.1  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
40  
30  
45  
DM  
Avalanche Current  
I
AS  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle v1%)  
Continuous Source Current (Diode Conduction)  
E
AS  
mJ  
A
a
I
S
4.3  
5.2  
2.7  
1.6  
1.9  
1.0  
T
A
= 25_C  
= 85_C  
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
19  
52  
24  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case  
1.5  
1.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71603  
www.vishay.com  
S-03707—Rev. B, 07-May-01  
1
Si7456DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
1
nA  
GSS  
V
= 80 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 80 V, V = 0 V, T = 85_C  
20  
GS  
J
a
On-State Drain Current  
I
40  
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.021  
0.025  
0.028  
V
= 10 V, I = 9.3 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6.0 V, I = 8.8 A  
0.023  
35  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 9.3 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= 4.3 A, V = 0 V  
0.8  
1.2  
44  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
36  
10  
g
Q
Q
V
= 50 V, V = 10 V, I = 9.3 A  
nC  
gs  
gd  
DS  
GS  
D
8.6  
1.27  
20  
R
g
W
t
40  
20  
90  
50  
80  
d(on)  
t
r
10  
V
= 50 V, R = 50 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
46  
ns  
d(off)  
t
f
26  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 4.3 A, di/dt = 100 A/ms  
50  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
GS  
= 10 thru 6 V  
5 V  
32  
24  
16  
8
T
= 125_C  
25_C  
C
–55_C  
4 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71603  
www.vishay.com  
S-03707—Rev. B, 07-May-01  
2
Si7456DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0.04  
C
iss  
0.03  
V
GS  
= 6.0 V  
0.02  
0.01  
0.00  
V
GS  
= 10 V  
C
rss  
C
oss  
0
0
8
16  
24  
32  
40  
0
10  
20  
30  
40  
50  
60  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.6  
2.3  
2.0  
1.7  
1.4  
1.1  
0.8  
0.5  
V
I
= 50 V  
= 9.3 A  
V
= 10 V  
GS  
= 9.3 A  
DS  
D
I
D
6
4
2
0
0
6
12  
18  
24  
30  
36  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
– Total Gate Charge (nC)  
T
– Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.08  
0.06  
0.04  
0.02  
0.00  
40  
10  
I
D
= 9.3 A  
T
= 150_C  
J
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71603  
www.vishay.com  
S-03707—Rev. B, 07-May-01  
3
Si7456DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.5  
50  
40  
0.0  
–0.5  
–1.0  
–1.5  
I
D
= 250 mA  
30  
20  
10  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
– Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 52_C/W  
thJA  
(t)  
3. T – T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Square Wave Pulse Duration (sec)  
Document Number: 71603  
www.vishay.com  
S-03707—Rev. B, 07-May-01  
4

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