SI7456DP [VISHAY]
N-Channel 100-V (D-S) MOSFET; N沟道100 -V （D -S ）的MOSFET
| 型号： | SI7456DP |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 100-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.025 @ V = 10 V
9.3
8.8
GS
100
APPLICATIONS
0.028 @ V = 6.0 V
GS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V, Full-/Half-Bridge DC/DC
D Industrial and 42-V Automotive
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
S
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7456DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
DS
V
V
GS
"20
T
= 25_C
= 85_C
9.3
6.7
5.7
4.1
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
40
30
45
DM
Avalanche Current
I
AS
L = 0.1 mH
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)
E
AS
mJ
A
a
I
S
4.3
5.2
2.7
1.6
1.9
1.0
T
A
= 25_C
= 85_C
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
19
52
24
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case
1.5
1.8
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
www.vishay.com
1
Si7456DP
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
DS
= 100 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 100 V, V = 0 V, T = 85_C
20
GS
J
a
On-State Drain Current
I
40
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.021
0.025
0.028
V
= 10 V, I = 9.3 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6.0 V, I = 8.8 A
0.023
35
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 9.3 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 4.3 A, V = 0 V
0.8
1.2
44
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
36
10
g
Q
Q
V
= 50 V, V = 10 V, I = 9.3 A
nC
gs
gd
DS
GS
D
8.6
1.27
20
R
g
0.5
2.1
40
20
90
50
80
W
t
d(on)
t
r
10
V
= 50 V, R = 50 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
46
ns
d(off)
t
f
26
Source-Drain Reverse Recovery Time
t
rr
I
F
= 4.3 A, di/dt = 100 A/ms
50
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 6 V
5 V
32
24
16
8
T
= 125_C
25_C
C
-55_C
4 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
www.vishay.com
2
Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3500
3000
2500
2000
1500
1000
500
0.04
C
iss
0.03
V
GS
= 6.0 V
0.02
0.01
0.00
V
GS
= 10 V
C
rss
C
oss
0
0
8
16
24
32
40
0
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.6
2.3
2.0
1.7
1.4
1.1
0.8
0.5
V
I
= 50 V
V
D
= 10 V
GS
DS
D
= 9.3 A
I
= 9.3 A
6
4
2
0
0
6
12
18
24
30
36
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
40
10
I
D
= 9.3 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.5
50
40
0.0
-0.5
-1.0
-1.5
I
D
= 250 mA
30
20
10
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
www.vishay.com
4
相关型号：
SI7456DP-E3
TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
VISHAY
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