SI7485DP-T1 [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI7485DP-T1 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7485DP
Vishay Siliconix
New Product
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
0.0073 @ V = -4.5 V
-20
-18
-15
GS
-20
0.0090 @ V = -2.5
GS
V
APPLICATIONS
0.013 @ V = -1.8
GS
V
D Battery Switch for Portable Devices
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
G
2
S
3
G
4
D
8
D
7
D
D
6
D
5
P-Channel MOSFET
Bottom View
Ordering Information: Si7485DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-20
DS
V
V
GS
"8
T
= 25_C
= 70_C
-12.5
-9.5
-20
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
-16.5
A
Pulsed Drain Current
I
-50
DM
a
continuous Source Current (Diode Conduction)
I
-4.5
5
-1.6
1.8
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
3.2
1.1
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
20
54
25
68
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.7
2.2
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
1
Si7485DP
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -1 mA
-0.4
-0.9
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= -16 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -16 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
v -5 V, V = -4.5 V
-40
A
D(on)
GS
V
= -4.5 V, I = -20 A
D
0.006
0.0074
0.0106
0.0073
0.0090
0.013
GS
a
V
= -2.5 V, I = -18 A
D
Drain-Source On-State Resistance
r
W
GS
GS
DS(on)
V
= -1.8 V, I = -15 A
D
a
Forward Transconductance
g
80
S
V
V
I
= -15 V, I = -20 A
D
fs
DS
a
Diode Forward Voltage
V
SD
= -4.5 A, V = 0 V
-0.62
-1.1
150
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
99
11.5
29
g
Q
Q
V
= -10 V, V = -5 V, I = -20 A
nC
gs
gd
DS
GS
D
R
2.4
80
W
G
t
t
120
210
540
260
80
d(on)
t
140
360
170
55
r
V
= -10 V, R = 10 W
L
DD
I
D
^ -1 A, V
= -4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = -2.9 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 5 thru 2 V
40
30
20
10
0
1.5 V
T
= 125_C
C
25_C
-55_C
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
2
Si7485DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
11000
8800
6600
4400
2200
0
0.016
0.012
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
0.008
0.004
0.000
C
8
GS
oss
C
rss
0
10
20
30
40
50
120
1.2
0
4
12
16
20
I
-
Drain Current (A)
V
- Drain-to-Source Voltage (V)
D
DS
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
= 20 A
V
GS
= 4.5 V
DS
I
I = 20 A
D
0
20
40
-
60
80
100
-50
-25
0
25
50
75
100 125 150
Q
Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
0.012
0.006
0.000
50
10
I
D
= 20 A
T
= 150_C
J
T
= 25_C
J
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
SD
-
Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
3
Si7485DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
100
80
0.3
I
D
= 1 mA
0.2
0.1
60
40
20
0.0
-0.1
-0.2
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
Limited by r
DS(on)
1 ms
10
10 ms
100 ms
1 s
1
10 s
dc
0.1
T
= 25_C
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
4
Si7485DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
5
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