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SI7501DN-E3 [VISHAY]

TRANSISTOR 5.4 A, 30 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power;
SI7501DN-E3
型号： SI7501DN-E3
厂家： VISHAY    VISHAY
描述：

TRANSISTOR 5.4 A, 30 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

开关 脉冲 晶体管
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中文：  中文翻译
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Si7501DN  
Vishay Siliconix  
New Product  
Complementary 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
0.051 @ V = -10 V  
-6.4  
-5.3  
7.7  
GS  
P-Channel  
N-Channel  
-30  
30  
APPLICATIONS  
0.075 @ V = -6 V  
GS  
D Backlight Inverter  
0.035 @ V = 10 V  
GS  
D DC/DC Converter  
0.050 @ V = 4.5 V  
6.5  
GS  
-
4-Cell Battery  
S
1
PowerPAKt 1212-8  
G
G
S1  
1
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
D
4
D
8
D
7
2
D
6
D
5
Bottom View  
S
2
Ordering Information: Si7501DN-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
P-Channel  
N-Channel  
10 secs Steady State  
10 secs Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-30  
30  
DS  
V
V
GS  
"25  
"20  
T
= 25_C  
= 70_C  
-6.4  
-5.1  
-4.5  
-3.6  
7.7  
4.7  
5.4  
4.3  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
-25  
25  
DM  
a
Continuous Source Current (Diode Conduction)  
I
-2.6  
3.1  
3
-1.3  
1.6  
2.6  
3.1  
2
1.3  
1.6  
1.0  
S
T
A
= 25_C  
= 70_C  
a
Maximum Power Dissipation  
P
W
D
T
A
1.0  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
32  
65  
5
40  
81  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
Steady State  
_C/W  
Maximum Junction-to-Foot (Case)  
6.3  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
1
 
Si7501DN  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
V
= V , I = -250 mA  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
-1.0  
1.0  
-3  
3
DS  
GS  
D
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
GS(th)  
V
= V , I = 250 mA  
GS D  
DS  
DS  
DS  
V
V
= 0 V, V = "25 V  
"200  
"100  
-1  
GS  
I
nA  
GSS  
= 0 V, V = "20 V  
GS  
V
= -24 V, V = 0 V  
GS  
DS  
V
= 24 V, V = 0 V  
1
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
A
DSS  
D(on)  
V
= -24 V, V = 0 V, T = 55_C  
-5  
DS  
GS  
J
V
= 24 V, V = 0 V, T = 55_C  
5
DS  
GS  
J
V
DS  
w -5 V, V = -10 V  
-25  
25  
GS  
a
On-State Drain Current  
I
V
p 5 V, V = 10 V  
GS  
DS  
V
= -10 V, I = -6.4 A  
0.041  
0.028  
0.055  
0.040  
13  
0.051  
0.035  
0.075  
0.050  
GS  
D
V
= 10 V, I = 7.7 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= -6 V, I = -5.3 A  
D
GS  
V
= 4.5 V, I = 6.5 A  
D
GS  
V
= -15 V, I = -6.4 A  
D
DS  
a
Forward Transconductance  
g
fs  
S
V
V
= 15 V, I = 7.7 A  
15  
DS  
D
I
= -1.7 A, V = 0 V  
-0.80  
0.80  
-1.2  
1.2  
S
GS  
a
Diode Forward Voltage  
V
SD  
I
S
= 1.7 A, V = 0 V  
GS  
Dynamicb  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
12.5  
9
19  
14  
Total Gate Charge  
Q
g
P-Channel  
V
= -15 V, V = -10 V, I = -6.4 A  
2.5  
2
DS  
GS D  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
Q
gs  
gd  
N-Channel  
V
DS  
= 15 V, V = 10 V, I = 7.7 A  
GS D  
3.6  
1.3  
9
R
g
W
3
10  
10  
20  
15  
25  
20  
30  
10  
25  
20  
15  
15  
30  
25  
40  
30  
45  
15  
50  
40  
t
d(on)  
P-Channel  
V
= -15 V, R = 5 W  
DD  
L
t
r
I
D
^ -3 A, V = -10 V, R = 1 W  
GEN G  
N-Channel  
= 15 V, R = 5 W  
Turn-Off Delay Time  
Fall Time  
t
ns  
d(off)  
V
DD  
L
I
D
^ -3 A, V  
= 10 V, R = 1 W  
GEN G  
t
f
I
= -1.7 A, di/dt = 100 A/ms  
= 1.7 A, di/dt = 100 A/ms  
F
Source-Drain  
Reverse Recovery Time  
t
rr  
I
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
2
Si7501DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
PCHANNEL  
Output Characteristics  
Transfer Characteristics  
25  
25  
20  
15  
10  
5
V
GS  
= 10 thru 6 V  
5 V  
T
= -55_C  
C
25_C  
20  
15  
10  
5
125_C  
4 V  
3 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
1000  
800  
600  
400  
200  
0
0.16  
0.12  
0.08  
0.04  
0.00  
C
iss  
V
GS  
= 6 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
0
6
12  
18  
24  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 6.4 A  
V
= 10 V  
DS  
GS  
I
D
I = 6.4 A  
D
6
4
2
0
0
3
6
9
12  
15  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
3
Si7501DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
PCHANNEL  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.16  
0.12  
0.08  
0.04  
0.00  
30  
T
= 150_C  
J
10  
I
= 6.4 A  
D
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.6  
0.4  
50  
40  
I
D
= 250 mA  
30  
20  
0.2  
0.0  
-0.2  
-0.4  
10  
0
-3  
-2  
-1  
-50  
-25  
0
25  
50  
75  
100 125 150  
10  
10  
10  
1
10  
100  
600  
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
P(t) = 0.0001  
P(t) = 0.001  
10  
1
I
D(on)  
P(t) = 0.01  
P(t) = 0.1  
Limited  
P(t) = 1  
T
= 25_C  
A
0.1  
P(t) = 10  
Single Pulse  
dc  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
DS  
- Drain-to-Source Voltage (V)  
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
4
Si7501DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
PCHANNEL  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
-3  
4. Surface Mounted  
0.01  
-4  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
5
Si7501DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
NCHANNEL  
Output Characteristics  
Transfer Characteristics  
30  
30  
25  
20  
15  
10  
5
V
GS  
= 10 thru 5 V  
25  
20  
15  
10  
5
4 V  
T
= 125_C  
C
25_C  
-55_C  
3 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
800  
600  
400  
200  
0
C
iss  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 7.7 A  
V
= 10 V  
DS  
GS  
I
D
I = 7.7 A  
D
6
4
2
0
0
2
4
6
8
10  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
6
Si7501DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
NCHANNEL  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.16  
0.12  
0.08  
0.04  
0.00  
30  
T
= 150_C  
J
10  
I
D
= 7.7 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.4  
0.2  
50  
40  
I
D
= 250 mA  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
30  
20  
10  
0
-3  
-2  
-1  
-50  
-25  
0
25  
50  
75  
100 125 150  
10  
10  
10  
1
10  
100  
600  
T
- Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
P(t) = 0.0001  
P(t) = 0.001  
10  
1
I
D(on)  
P(t) = 0.01  
P(t) = 0.1  
Limited  
P(t) = 1  
T
= 25_C  
A
0.1  
P(t) = 10  
Single Pulse  
dc  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
DS  
- Drain-to-Source Voltage (V)  
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
7
Si7501DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
NCHANNEL  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
=65_C/W  
thJA  
(t)  
3. T  
- T = P Z  
A DM thJA  
JM  
Single Pulse  
-3  
4. Surface Mounted  
0.01  
-4  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72173  
S-03722—Rev. A, 07-Apr-03  
www.vishay.com  
8

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