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SI7625DN-T1-GE3

更新时间：2025-07-13 10:19:23
品牌：VISHAY
描述：P-Channel 30 V (D-S) MOSFET

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SI7625DN-T1-GE3 概述

P-Channel 30 V (D-S) MOSFET P沟道30 V （D -S ）的MOSFET 功率场效应晶体管

SI7625DN-T1-GE3 规格参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：1.55Is Samacsys：N
雪崩能效等级（Eas）：20 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：35 A最大漏极电流 (ID)：17.3 A
最大漏源导通电阻：0.007 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-XDSO-C5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：52 W最大脉冲漏极电流 (IDM)：80 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7625DN-T1-GE3 数据手册

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New Product  
Si7625DN  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
100% Rg Tested  
100% UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
- 35d  
- 35d  
0.007 at VGS = - 10 V  
0.011 at VGS = - 4.5 V  
•
•
•
•
- 30  
39.5 nC  
PowerPAK® 1212-8  
APPLICATIONS  
S
S
•
•
Notebook Adapter Switch  
Notebook Load Switch  
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View  
Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
- 35d  
- 35d  
- 17.3a, b  
- 13.8a, b  
- 80  
- 35d  
- 3.0a, b  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
IAS  
Avalanche Current  
- 20  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
52  
33  
PD  
Maximum Power Dissipation  
3.7a, b  
2.4a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)e, f  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
26  
Maximum  
Unit  
°C/W  
Maximum Junction-to-Ambienta, c  
t ≤ 10 s  
Steady State  
33  
Maximum Junction-to-Case  
1.9  
2.4  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under steady state conditions is 81 °C/W.  
d. Package limited.  
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
www.vishay.com  
1
New Product  
Si7625DN  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = - 250 µA  
ID = - 250 µA  
Drain-Source Breakdown Voltage  
- 30  
V
V
DS Temperature Coefficient  
- 23  
5.0  
mV/°C  
VGS(th) Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS = VGS, ID = - 250 µA  
- 1.0  
- 30  
- 2.5  
100  
- 1  
V
IGSS  
VDS = 0 V, VGS  
=
20 V  
nA  
VDS = - 30 V, VGS = 0 V  
IDSS  
ID(on)  
RDS(on)  
gfs  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
VDS = - 30 V, VGS = 0 V, TJ = 55 °C  
- 5  
VDS ≥ - 10 V, VGS = - 10 V  
VGS = - 10 V, ID = - 15 A  
0.0056  
0.0088  
47  
0.007  
0.011  
Drain-Source On-State Resistancea  
Ω
S
V
GS = - 4.5 V, ID = - 10 A  
Forward Transconductancea  
Dynamicb  
VDS = - 10 V, ID = - 15 A  
Ciss  
Coss  
Crss  
Input Capacitance  
4427  
452  
430  
84.5  
39.5  
11  
VDS = - 15 V, VGS = 0 V, f = 1 MHz  
DS = - 15 V, VGS = - 10 V, ID = - 10 A  
DS = - 15 V, VGS = - 4.5 V, ID = - 10 A  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
V
V
126  
60  
Qg  
Total Gate Charge  
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
13.5  
1.8  
15  
0.4  
3.6  
30  
Ω
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
V
DD = - 15 V, RL = 1.5 Ω  
13  
26  
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω  
Turn-Off DelayTime  
Fall Time  
55  
100  
20  
10  
ns  
Turn-On Delay Time  
Rise Time  
55  
100  
80  
V
DD = - 15 V, RL = 1.5 Ω  
42  
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω  
Turn-Off DelayTime  
Fall Time  
52  
100  
34  
17  
Drain-Source Body Diode Characteristics  
Continous Source-Drain Diode Current  
Pulse Diode Forward Current  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
- 35  
- 80  
- 1.2  
24  
A
Body Diode Voltage  
IS = - 3 A, VGS = 0 V  
- 0.74  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
14  
4
ns  
nC  
Qrr  
ta  
8
I = - 10 A, dI/dt = 100 A/µs, T = 25 °C  
F
J
8
ns  
Reverse Recovery Rise Time  
tb  
6
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
New Product  
Si7625DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
10  
8
80  
V
= 10 V thru 4 V  
GS  
64  
48  
32  
16  
0
6
T
= 125 °C  
= 25 °C  
C
4
T
C
V
= 3 V  
GS  
2
T
= - 55 °C  
C
0
0
1
2
3
4
5
0.0  
0.5  
V
1.0  
1.5  
2.0  
2.5  
80  
90  
V
- Gate-to-Source Voltage (V)  
- Drain-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
6000  
4800  
3600  
2400  
1200  
0
0.012  
0.010  
0.008  
0.006  
0.004  
0.002  
V
=4.5V  
GS  
C
iss  
V
=10V  
48  
GS  
C
oss  
C
rss  
0
16  
32  
64  
0
6
12  
18  
24  
30  
I
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
DS  
D
On-Resistance vs. Drain Current  
Capacitance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
10  
8
I
= 15 A  
D
V
= 15 V  
DS  
I
= 10 A  
D
V
= 10 V  
GS  
V
= 10 V  
DS  
V
= 4.5 V  
GS  
6
4
V
= 20 V  
DS  
2
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
18  
36  
54  
72  
T
- Junction Temperature (°C)  
J
Q
- Total Gate Charge (nC)  
g
On-Resistance vs. Junction Temperature  
Gate Charge  
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
www.vishay.com  
3
New Product  
Si7625DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
0.030  
100  
10  
1
I
= 15 A  
D
T
= 150 °C  
J
0.024  
0.018  
0.012  
0.006  
0.000  
T
= 25 °C  
J
T
= 125 °C  
J
0.1  
0.01  
T
= 25 °C  
J
0.001  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
- Source-to-Drain Voltage (V)  
SD  
V
GS  
- Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.8  
0.5  
100  
80  
60  
40  
20  
0
I
= 250 μA  
D
0.2  
I
= 5 mA  
D
- 0.1  
- 0.4  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
- Temperature (°C)  
J
Pulse (s)  
Single Pulse Power, Junction-to-Ambient  
Threshold Voltage  
100  
Limited by R  
*
DS(on)  
10  
1
1 ms  
10 ms  
100 ms  
1 s  
10 s  
0.1  
DC  
T
= 25 °C  
A
BVDSS Limited  
10  
Single Pulse  
0.01  
0.1  
1
0.01  
100  
V
- Drain-to-Source Voltage (V)  
DS  
* V  
> minimum V at which R  
is specified  
GS  
GS  
DS(on)  
Safe Operating Area  
www.vishay.com  
4
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
New Product  
Si7625DN  
Vishay Siliconix  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
70  
56  
42  
Package Limited  
28  
14  
0
0
25  
50  
75  
100  
125  
150  
T
- Case Temperature (°C)  
C
Current Derating*  
65  
52  
39  
26  
13  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
T
- Case Temperature (°C)  
T
A
- Ambient Temperature (°C)  
C
Power, Junction-to-Case  
Power, Junction-to-Ambient  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
www.vishay.com  
5
New Product  
Si7625DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Notes:  
P
DM  
0.05  
t
1
t
2
t
1
0.02  
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 81 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
4. Surface Mounted  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
100  
1000  
10  
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?65737.  
www.vishay.com  
6
Document Number: 65737  
S10-0638-Rev. A, 22-Mar-10  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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