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SI7810DN-T1

更新时间：2025-06-30 15:08:26
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI7810DN-T1 概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管

SI7810DN-T1 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
配置：Single最大漏极电流 (Abs) (ID)：2.8 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.5 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

SI7810DN-T1 数据手册

通过下载SI7810DN-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7810DN  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
•
TrenchFET® Power MOSFET  
New Low Thermal Resistance  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
5.4  
Pb-free  
Available  
0.062 @ VGS = 10 V  
0.084 @ VGS = 6 V  
PowerPAK 1212-8 Package with Low  
1.07-mm Profile  
100  
RoHS*  
4.6  
COMPLIANT  
•
PWM Optimized  
APPLICATIONS  
•
•
Primary Side Switch  
In-Rush Current Limiter  
PowerPAK 1212-8  
D
S
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View  
N-Channel MOSFET  
Ordering Information: Si7810DN-T1  
Si7810DN–T1–E3 (Lead (Pb)–free)  
ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
20  
V
A
VGS  
TA = 25°C  
A = 70°C  
5.4  
4.3  
3.4  
2.8  
Continuous Drain Current (TJ = 150°C)a  
ID  
T
IDM  
IS  
20  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
Single Avalanche Current  
3.2  
1.3  
A
IAS  
EAS  
19  
18  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle 1 %)  
mJ  
W
TA = 25°C  
A = 70°C  
3.8  
2.0  
1.5  
0.8  
Maximum Power Dissipationa  
PD  
T
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
TJ, Tstg  
–55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t ≤ 10 sec  
33  
81  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
65  
°C/W  
Maximum Junction-to-Case  
Notes  
a. Surface Mounted on 1“ x 1“ FR4 Board.  
RthJC  
1.9  
2.4  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 70689  
S-51210–Rev. B, 27-Jun-05  
www.vishay.com  
1
Si7810DN  
Vishay Siliconix  
SPECIFICATIONS T = 25°C, unless otherwise noted  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
2
4.5  
100  
1
V
VDS = 0 V, VGS  
= 20 V  
nA  
VDS = 100 V, VGS = 0 V  
DS = 100 V, VGS = 0 V, TJ = 55°C  
VDS ≥ 5 V, VGS = 10 V  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
5
20  
VGS = 10 V, ID = 5.4 A  
0.052  
0.070  
12  
0.062  
0.084  
Drain-Source On-State Resistancea  
rDS(on)  
Ω
V
GS = 6 V, ID = 4.6 A  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
VDS = 15 V, ID = 5.4 A  
IS = 3.2 A, VGS = 0 V  
S
V
VSD  
0.78  
1.2  
17  
Total Gate Charge  
Qg  
Qgs  
Qgd  
td(on)  
tr  
13.5  
3
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
V
DS = 50 V, VGS = 10 V, ID = 5.4 A  
nC  
ns  
4.6  
10  
15  
20  
15  
45  
15  
25  
30  
25  
90  
VDD = 50 V, RL = 50 Ω  
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω  
Turn-Off DelayTime  
Fall Time  
td(off)  
tf  
Source-Drain Reverse Recovery Time  
trr  
IF = 3.2 A, di/dt = 100 A/µs  
Notes  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
20  
16  
12  
8
20  
16  
12  
8
6 V  
V
GS  
= 10 thru 7 V  
T
= 125˚C  
C
5 V  
4 V  
4
4
25˚C  
3
–55˚C  
6
0
0
0
1
2
3
4
5
0
1
2
4
5
7
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 70689  
S-51210–Rev. B, 27-Jun-05  
Si7810DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
5000  
4000  
3000  
2000  
1000  
0
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
C
iss  
V
GS  
= 6 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
V
DS  
– Drain-to-Source Voltage (V)  
I
D
– Drain Current (A)  
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 10 V  
V
D
= 4.5 V  
DS  
= 11  
GS  
I = 11 A  
I
A
0
7
14  
21  
28  
35  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
– Total Gate Charge (nC)  
T – Junction Temperature (˚C)  
J
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.16  
0.12  
0.08  
0.04  
0.00  
30  
10  
T
= 150˚C  
J
I
D
= 5.4 A  
T
= 25˚C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 70689  
S-51210–Rev. B, 27-Jun-05  
www.vishay.com  
3
Si7810DN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
0.6  
50  
40  
30  
0.4  
I
D
= 250 µA  
0.2  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
–1.2  
20  
10  
0
0.01  
–50 –25  
0
25  
50  
75  
100 125 150  
0.1  
1
10  
100  
600  
Time (sec)  
T
– Temperature (˚C)  
J
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65˚C/W  
(t)  
thJA  
3. T – T = P  
Z
JM DM thJA  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?70689.  
www.vishay.com  
4
Document Number: 70689  
S-51210–Rev. B, 27-Jun-05  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

SI7810DN-T1 CAD模型

原理图符号

PCB 封装图

SI7810DN-T1 相关器件

型号 制造商 描述 价格 文档
SI7810DN-T1-E3 VISHAY 元器件封装:PowerPAK® 1212-8; 获取价格
SI7810DN-T1-GE3 VISHAY Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R 获取价格
SI7810DN_06 VISHAY N-Channel 100-V (D-S) MOSFET 获取价格
SI7812 SECOS 3-Terminal Positive Voltage Regulator 获取价格
SI7812DN VISHAY N-Channel 75-V (D-S) MOSFET 获取价格
SI7812DN-T1-E3 VISHAY N-Channel 75-V (D-S) MOSFET 获取价格
SI7812DN-T1-GE3 VISHAY N-Channel 75-V (D-S) MOSFET 获取价格
SI7815 SECOS 3-Terminal Positive Voltage Regulator 获取价格
SI7818 SECOS 3-Terminal Positive Voltage Regulator 获取价格
SI7818DN VISHAY N-Channel 150-V (D-S) MOSFET 获取价格

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