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SI7840DP

更新时间：2025-07-09 02:10:26
品牌：VISHAY
描述：N-Channel 30-V (D-S) Fast Switching MOSFET

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中文翻译

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SI7840DP 概述

N-Channel 30-V (D-S) Fast Switching MOSFET N通道30 -V （D -S ）快速开关MOSFET 功率场效应晶体管

SI7840DP 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：11 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e0工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.9 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SI7840DP 数据手册

通过下载SI7840DP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7840DP  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
0.0095 @ V = 10 V  
GS  
18  
15  
30  
0.014 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Optimized for “High-Side” Synchronous  
Rectifier Operation  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
18  
14  
11  
8
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
4.1  
1.6  
S
I
AS  
40  
80  
L = 0.1 mH  
Avalanche Energy  
E
mJ  
AS  
T
= 25_C  
= 70_C  
5.0  
3.2  
1.9  
1.2  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
20  
52  
25  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
2.1  
2.6  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71624  
S-05804—Rev. C, 25-Feb-02  
www.vishay.com  
1
Si7840DP  
New Product  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0077  
0.0095  
0.014  
V
= 10 V, I = 18 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 15 A  
0.0115  
40  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 18 A  
S
V
D
a
Diode Forward Voltage  
V
I
S
= 4.1 A, V = 0 V  
0.75  
1.2  
23  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
15.5  
3.8  
6
Q
gs  
Q
gd  
V
= 15 V, V = 5.0 V, I = 18 A  
nC  
DS  
GS  
D
R
G
0.8  
17  
14  
39  
19  
50  
W
t
t
26  
21  
60  
30  
80  
d(on)  
t
r
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 4.1 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
= 10 thru 4 V  
GS  
32  
24  
16  
8
3 V  
T
C
= 125_C  
25_C  
–55_C  
0
0
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71624  
S-05804—Rev. C, 25-Feb-02  
www.vishay.com  
2
Si7840DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
2500  
2000  
1500  
1000  
500  
0.016  
C
iss  
V
= 4.5 V  
GS  
0.012  
0.008  
0.004  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
8
16  
24  
32  
40  
0
4
8
12  
16  
20  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
V
= 10 V  
GS  
DS  
I
D
= 18  
A
I = 18 A  
D
6
4
2
0
0
6
12  
18  
24  
30  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
I
D
= 18 A  
T
J
= 150_C  
10  
T
J
= 25_C  
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71624  
S-05804—Rev. C, 25-Feb-02  
www.vishay.com  
3
Si7840DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.4  
200  
160  
120  
I
D
= 250 mA  
0.2  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
80  
40  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
Z
3. T – T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71624  
S-05804—Rev. C, 25-Feb-02  
www.vishay.com  
4

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