SI7911DN_06 [VISHAY]

Dual P-Channel 20-V (D-S) MOSFET; 双P通道20 - V(D -S)的MOSFET
SI7911DN_06
型号: SI7911DN_06
厂家: VISHAY    VISHAY
描述:

Dual P-Channel 20-V (D-S) MOSFET
双P通道20 - V(D -S)的MOSFET

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SPICE Device Model Si7911DN  
Vishay Siliconix  
Dual P-Channel 20-V (D-S) MOSFET  
CHARACTERISTICS  
P-Channel Vertical DMOS  
Macro Model (Subcircuit Model)  
Level 3 MOS  
Apply for both Linear and Switching Application  
Accurate over the 55 to 125°C Temperature Range  
Model the Gate Charge, Transient, and Diode Reverse Recovery  
Characteristics  
DESCRIPTION  
The attached spice model describes the typical electrical  
characteristics of the p-channel vertical DMOS. The subcircuit  
model is extracted and optimized over the 55 to 125°C  
temperature ranges under the pulsed 0-V to 5-V gate drive. The  
saturated output impedance is best fit at the gate bias near the  
threshold voltage.  
A novel gate-to-drain feedback capacitance network is used to model  
the gate charge characteristics while avoiding convergence difficulties  
of the switched Cgd model. All model parameter values are optimized  
to provide a best fit to the measured electrical data and are not  
intended as an exact physical interpretation of the device.  
SUBCIRCUIT MODEL SCHEMATIC  
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate  
data sheet of the same number for guaranteed specification limits.  
www.vishay.com  
Document Number: 72506  
S-60244Rev. B, 20-Feb-06  
1
SPICE Device Model Si7911DN  
Vishay Siliconix  
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)  
Simulated Measured  
Parameter  
Symbol  
Test Condition  
Unit  
Data  
Data  
Static  
Gate Threshold Voltage  
On-State Drain Currenta  
VGS(th)  
ID(on)  
0.61  
153  
V
A
V
DS = VGS, ID = 250 µA  
VDS = 5 V, VGS = 4.5 V  
0.039  
0.055  
0.077  
14  
0.040  
0.054  
0.075  
14  
VGS = 4.5 V, ID = 5.7 A  
VGS = 2.5 V, ID = 5 A  
VGS = 1.8 V, ID = 1.1 A  
Drain-Source On-State Resistancea  
rDS(on)  
Forward Transconductancea  
Diode Forward Voltagea  
gfs  
S
V
VDS = 6 V, ID = 5.7 A  
VSD  
I
S = 2.3 A, VGS = 0 V  
0.82  
0.80  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
7
9.5  
1.6  
2.5  
20  
nC  
ns  
V
DS = 6 V, VGS = 4.5 V, ID = 5.7 A  
1.6  
2.5  
20  
17  
67  
15  
35  
VDD = 10 V, RL = 10 Ω  
I
D ≅ −1 A, VGEN = 4.5 V, RG = 6 Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
70  
40  
Notes  
a. Pulse test; pulse width 300 µs, duty cycle 2%.  
b. Guaranteed by design, not subject to production testing.  
www.vishay.com  
Document Number: 72506  
S-60244Rev. B, 20-Feb-06  
2
SPICE Device Model Si7911DN  
Vishay Siliconix  
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)  
www.vishay.com  
Document Number: 72506  
S-60244Rev. B, 20-Feb-06  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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