SI8401DB-T1 [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI8401DB-T1 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8401DB
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
D Pin Compatible to Industry Standard Si3443DV
APPLICATIONS
0.065 @ V = −4.5 V
−4.9
−4.1
GS
−20
0.095 @ V = −2.5
V
GS
D PA, Battery and Load Switch
D Battery Charger Switch
D PA Switch
MICRO FOOT
S
Bump Side View
Backside View
3
4
2
G
D
S
D
G
8401
xxx
Device Marking: 8401
xxx = Date/Lot Traceability Code
D
1
P-Channel MOSFET
Ordering Information: Si8401DB-T1
Si8401DB-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"12
T
= 25_C
= 70_C
−3.6
−2.8
−4.9
−3.9
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−10
a
continuous Source Current (Diode Conduction)
I
−2.5
2.77
1.77
−2.5
1.47
0.94
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
c
VPR
215/245
b
Package Reflow Conditions
_C
c
IR/Convection
220/250
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
35
72
16
45
85
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
c. Package reflow conditions for lead-free.
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
1
Si8401DB
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.45
−0.9
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −4.5 V
−5
A
D(on)
GS
V
= −4.5 V, I = −1 A
0.057
0.080
0.065
0.095
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −2.5 V, I = −1 A
GS
D
a
Forward Transconductance
g
6
S
V
V
= −10 V, I = −1 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1 A, V = 0 V
−0.73
−1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
11
2.1
2.9
17
28
88
60
17
g
Q
Q
V
= −10 V, V = −4.5 V, I = −1 A
nC
ns
gs
gd
DS
GS
D
t
25
45
d(on)
t
r
V
DD
= −10 V, R = 10 W
L
I
D
^ −1 A, V
= −4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
135
90
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = − A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
8
V
= 5 thru 2.5 V
GS
8
6
4
2
0
2 V
6
4
T
= 125_C
C
2
1.5 V
25_C
−55_C
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
2
Si8401DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1500
1200
900
600
300
0
0.15
0.12
C
iss
V
V
= 2.5 V
= 4.5 V
GS
0.09
0.06
0.03
0.00
GS
C
oss
C
rss
0
1
2
3
4
5
6
7
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
GS
= 4.5 V
DS
I
= 1
A
I = 1 A
D
6
4
2
0
0
4
8
12
16
20
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
0.24
0.18
0.12
0.06
0.00
10
I
D
= 1 A
T
= 150_C
J
1
T
= 25_C
J
0.1
0.0
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
3
Si8401DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
80
60
I
D
= 250 mA
0.3
0.2
40
20
0.1
0.0
−0.1
−0.2
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 72_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
4
Si8401DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH)
4 O 0.30 X 0.31
Note 3
Solder Mask O X 0.40
e
A
A
2
Silicon
A
1
Bump Note 2
b Diamerter
e
S
e
Recommended Land
E
8401
XXX
e
S
D
Mark on Backside of Die
NOTES (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are Eutectic solder 63/57 Sn/Pb. (Sn 3.8 Ag, 0.7 Cu for Pb-free bumps)
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
MILLIMETERS*
INCHES
Dim
Min
Max
Min
Max
0.600
0.260
0.340
0.370
1.520
1.520
0.750
0.370
0.650
0.290
0.360
0.410
1.600
1.600
0.850
0.380
0.0236
0.0102
0.0134
0.0146
0.0598
0.0598
0.0295
0.0146
0.0256
0.0114
0.0142
0.0161
0.0630
0.0630
0.0335
0.0150
A
A1
A2
b
D
E
e
S
* Use millimeters as the primary measurement.
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
5
相关型号：
SI8404DB-T1-E1
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
VISHAY
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