SI8406DB-T2-E1 [VISHAY]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | SI8406DB-T2-E1 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8406DB
Vishay Siliconix
www.vishay.com
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V)
RDS(on) () MAX.
0.033 at VGS = 4.5 V
0.037 at VGS = 2.5 V
0.042 at VGS = 1.8 V
ID (A)
16 e
16 e
15
Qg (TYP.)
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height
20
7.5 nC
• Material categorization:
for definitions of compliance please see
Available
www.vishay.com/doc?99912
MICRO FOOT® 1.5 x 1
S
2
S
3
APPLICATIONS
• Load switch
D
4
D
xxxx
xxx
• Battery management
• Boost converter
1
G
6
S
5
D
1
G
Backside View
Bump Side View
Marking Code: xxxx = 8406
xxx = Date / lot traceability code
Ordering Information:
Si8406DB-T2-E1 (Lead (Pb)-free and halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
8
TC = 25 °C
C = 70 °C
16 e
T
13.5
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
7.8 a,b
6.2 a,b
30
A
Pulsed Drain Current (t = 300 μs)
IDM
IS
TC = 25 °C
11
2.3 a,b
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
13
T
C = 70 °C
8.4
Maximum Power Dissipation
PD
W
TA = 25 °C
TA = 70 °C
2.77 a,b
1.77 a,b
-55 to +150
260
Operating Junction and Storage Temperature Range
Package Reflow Conditions c
TJ, Tstg
°C
IR/Convection
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. TC = 25 °C package limited.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a,b
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
37
7
45
°C/W
Maximum Junction-to-Case (Drain) c
Steady State
RthJC
9.5
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
S15-0932-Rev. B, 20-Apr-15
Document Number: 62530
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 μA
ID = 250 μA
20
-
-
-
-
V
VDS Temperature Coefficient
18
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-3
-
VDS = VGS, ID = 250 μA
0.4
-
-
0.85
100
1
V
IGSS
VDS = 0 V, VGS
=
8 V
-
nA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 4.5 V
-
-
-
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
μA
A
-
10
ID(on)
5
-
-
-
VGS = 4.5 V, ID = 1 A
0.026
0.028
0.030
20
0.033
0.037
0.042
Drain-Source On-State Resistance a
RDS(on)
gfs
V
V
GS = 2.5 V, ID = 1 A
GS = 1.8 V, ID = 1 A
-
-
Forward Transconductance a
Dynamic b
VDS = 10 V, ID = 1 A
-
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
830
146
61
13
7.5
1.1
0.8
3.6
7
-
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 8 V, ID = 1 A
VDS = 10 V, VGS = 4.5 V, ID = 1 A
VGS = 0.1 V, f = 1 MHz
-
pF
-
20
12
-
Total Gate Charge
Qg
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
-
-
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
15
40
60
20
10
35
50
20
18
30
10
5
VDD = 10 V, RL = 10
ID 1 A, VGEN = 4.5 V, Rg = 1
ns
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
17
25
10
VDD = 10 V, RL = 10
ID 1 A, VGEN = 8 V, Rg = 1
ns
A
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
-
-
-
-
-
-
-
-
-
20
30
1.2
30
10
-
Body Diode Voltage
IS = 1 A, VGS = 0
0.7
15
5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
IF = 1 A, dI/dt = 100 A/μs, TJ = 25 °C
8
ns
Reverse Recovery Rise Time
tb
7
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
Document Number: 62530
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
30
25
20
15
10
5
VGS = 5 V thru 2 V
8
6
4
2
0
VGS = 1.5 V
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS = 1 V
2.5
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
0.036
0.032
0.028
0.024
0.020
1200
900
600
300
0
Ciss
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
Coss
Crss
0
5
10
15
20
25
30
0
4
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
8
ID = 1 A
ID = 1 A
VDS = 10 V
VGS = 2.5 V, 1.8 V
6
VDS = 5 V
VGS = 4.5 V
4
2
0
VDS = 16 V
- 50 - 25
0
25
50
75
100 125 150
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62530
S15-0932-Rev. B, 20-Apr-15
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
0.06
0.04
0.02
0.00
100
10
1
ID = 1 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
10
1
100 μs
1 ms
10 ms
100 ms,1 s
10 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. B, 20-Apr-15
Document Number: 62530
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
20
16
12
8
12
9
Package Limited
6
3
4
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Ambient Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0932-Rev. B, 20-Apr-15
Document Number: 62530
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
Single Pulse
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62530.
S15-0932-Rev. B, 20-Apr-15
Document Number: 62530
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 6-Bump
(1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height)
6x Ø b1
D
S
S
S
XXXX
G
D
XXX
s
e
e
s
Mark on Backside of Die
E
6x Ø 0.24 to 0.26 (Note 3)
Solder mask ~ Ø 0.25
NOTE 5
A
B
C
b
e
e
K
Bump (Note 2)
Recommended Land Pattern
Notes
(unless otherwise specified)
1. Six (6) solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
MILLIMETERS
NOM.
0.575
INCHES
NOM.
DIM.
MIN.
0.510
0.220
0.290
0.297
MAX.
0.590
0.280
0.310
0.363
MIN.
MAX.
0.0232
0.0110
0.0122
0.0143
A
A1
A2
b
0.0201
0.0087
0.0114
0.0116
0.0226
0.0098
0.0118
0.0129
0.0098
0.0197
0.0090
0.0378
0.0575
0.0025
0.250
0.300
0.330
b1
e
0.250
0.500
s
0.210
0.920
1.420
0.028
0.230
0.250
1.000
1.500
0.102
0.0082
0.0362
0.0559
0.0011
0.0098
0.0394
0.0591
0.0040
D
0.960
E
1.460
K
0.065
Note
•
Use millimeters as the primary measurement.
ECN: T15-0140-Rev. A, 20-Apr-15
DWG: 6035
Revison: 20-Apr-15
Document Number: 69426
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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