SI8416DB-T2-E1 [VISHAY]
MOSFET N-CH 8V 16A MICRO;
| 型号： | SI8416DB-T2-E1 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET N-CH 8V 16A MICRO |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8416DB
Vishay Siliconix
www.vishay.com
N-Channel 8 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.023 at VGS = 4.5 V
0.025 at VGS = 2.5 V
0.030 at VGS = 1.8 V
0.040 at VGS = 1.5 V
0.095 at VGS = 1.2 V
ID (A) d
16
Qg (TYP.)
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height
16
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
8
16
17 nC
15
3
MICRO FOOT® 1.5 x 1
APPLICATIONS
D
S
2
S
• Low on-resistance load switch for
portable devices
- Low power consumption,
low voltage drop
- Increased battery life
3
D
4
xxxx
xxx
1
G
6
S
G
- Space Saving on PCB
5
D
1
Backside View
Bump Side View
Marking Code: xxxx = 8416
xxx = Date / lot traceability code
Ordering Information:
S
N-Channel MOSFET
Si8416DB-T2-E1 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
8
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
5
TC = 25 °C
16 e
TC = 70 °C
TA = 25 °C
TA = 70 °C
16 e
Continuous Drain Current (TJ = 150 °C)
ID
9.3 a, b
7.4 a, b
20
A
Pulsed Drain Current (t = 300 μs)
IDM
IS
TC = 25 °C
11
2.3 a, b
Continuous Source-Drain Diode Current
TA = 25 °C
T
C = 25 °C
C = 70 °C
13
T
8.4
Maximum Power Dissipation
PD
W
TA = 25 °C
TA = 70 °C
2.77 a, b
1.77 a, b
-55 to +150
260
Operating Junction and Storage Temperature Range
Package Reflow Conditions c
TJ, Tstg
°C
IR/Convection
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, f
Maximum Junction-to-Case (Drain) g
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
37
7
45
°C/W
Steady State
RthJC
9.5
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. TC = 25 °C package limited.
f. Maximum under steady state conditions is 85 °C/W.
g. Case is defined as top surface of the package.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 μA
ID = 250 μA
8
-
2.2
-2.7
-
-
-
V
VDS Temperature Coefficient
-
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
VDS = VGS, ID = 250 μA
0.35
0.80
100
1
V
IGSS
VDS = 0 V, VGS
=
5 V
-
-
-
5
-
-
-
-
-
-
-
nA
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 4.5 V
-
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
μA
A
-
10
ID(on)
-
-
VGS = 4.5 V, ID = 1.5 A
0.019
0.021
0.023
0.027
0.040
22
0.023
0.025
0.030
0.040
0.095
-
V
V
GS = 2.5 V, ID = 1 A
GS = 1.8 V, ID = 1 A
Drain-Source On-State Resistance a
RDS(on)
S
V
GS = 1.5 V, ID = 0.5 A
GS = 1.2 V, ID = 0.5 A
V
Forward Transconductance a
Dynamic b
gfs
VDS = 4 V, ID = 1.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
-
1470
580
450
17
-
-
VDS = 4 V, VGS = 0 V, f = 1 MHz
VDS = 4 V, VGS = 4.5 V, ID = 1.5 A
pF
-
26
-
Qgs
Qgd
Rg
1.8
3.4
2.5
13
nC
-
V
GS = 0.1 V, f = 1 MHz
-
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
25
30
80
20
15
VDD = 4 V, RL = 2.7
ns
ID 1.5 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
40
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
-
-
20
A
Pulse Diode Forward Current
Body Diode Voltage
ISM
VSD
trr
-
-
-
-
-
-
-
20
1.2
70
35
-
IS = 1.5 A, VGS = 0
0.7
35
18
13
22
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25 °C
ns
tb
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
15
10
5
10
VGS = 5 V thru 1.5 V
8
6
TC = 25 °C
4
TC = 125 °C
2
TC = - 55 °C
VGS = 1 V
2.5
0
0
0.0
0.5
1.0
1.5
2.0
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
2400
2000
1600
1200
800
400
0
VGS = 1.2 V
Ciss
VGS = 1.5 V
Coss
VGS = 1.8 V
Crss
VGS = 4.5 V
V
GS = 2.5 V
0
4
8
12
16
20
0
2
4
6
8
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.5 A
VGS = 1.5 V; ID = 0.5 A
ID = 1.5 A
VDS = 4 V
4
3
2
1
0
VDS = 2 V
VGS = 1.2 V; ID = 0.5 A
VDS = 6.4 V
- 50 - 25
0
25
50
75
100 125 150
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63716
S15-0932-Rev. B, 20-Apr-15
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
ID = 1.5 A
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
100 μs
10
1
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
TA = 25 °C
BVDSS Limited
10 100
0.01
0.1
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
9
24
20
16
12
8
Package Limited
6
3
4
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Ambient Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
Single Pulse
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63716.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 6-Bump
(1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height)
6x Ø b1
D
S
S
S
XXXX
G
D
XXX
s
e
e
s
Mark on Backside of Die
E
6x Ø 0.24 to 0.26 (Note 3)
Solder mask ~ Ø 0.25
NOTE 5
A
B
C
b
e
e
K
Bump (Note 2)
Recommended Land Pattern
Notes
(unless otherwise specified)
1. Six (6) solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
MILLIMETERS
NOM.
0.575
INCHES
NOM.
DIM.
MIN.
0.510
0.220
0.290
0.297
MAX.
0.590
0.280
0.310
0.363
MIN.
MAX.
0.0232
0.0110
0.0122
0.0143
A
A1
A2
b
0.0201
0.0087
0.0114
0.0116
0.0226
0.0098
0.0118
0.0129
0.0098
0.0197
0.0090
0.0378
0.0575
0.0025
0.250
0.300
0.330
b1
e
0.250
0.500
s
0.210
0.920
1.420
0.028
0.230
0.250
1.000
1.500
0.102
0.0082
0.0362
0.0559
0.0011
0.0098
0.0394
0.0591
0.0040
D
0.960
E
1.460
K
0.065
Note
•
Use millimeters as the primary measurement.
ECN: T15-0140-Rev. A, 20-Apr-15
DWG: 6035
Revison: 20-Apr-15
Document Number: 69426
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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