概述
数据手册SI8497DB 概述
P-Channel 30 V (D-S) MOSFET P沟道30 V （D -S ）的MOSFET
SI8497DB 数据手册
通过下载SI8497DB数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si8497DB
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D (A)d
VDS (V)
RDS(on) () Max.
Qg (Typ.)
Definition
•
•
•
•
TrenchFET® Power MOSFET
Ultra-small 1.5 mm x 1 mm Maximum Outline
Ultra-thin 0.59 Maximum Height
0.053 at VGS = - 4.5 V
0.071 at VGS = - 2.5 V
0.120 at VGS = - 2.0 V
- 13
- 11
- 5
- 30
16.3 nC
Compliant to RoHS Directive 2002/95/EC
MICRO FOOT
APPLICATIONS
Bump Side View
Backside View
•
Low On-Resistance Load Switch, Charger Switch,
OVP Switch and Battery Switch for Portable
Devices
S
S
D
G
S
D
2
3
4
1
6
5
- Low Power Consumption
- Increased Battery Life
- Space Savings on PCB
S
G
Device Marking: 8497
xxx = Date/Lot Traceability Code
Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 30
12
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
TC = 70 °C
- 13
- 10
Continuous Drain Current (TJ = 150 °C)
ID
- 5.9a, b
TA = 25 °C
- 4.7a, b
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
- 20
TC = 25 °C
TA = 25 °C
- 11
Continuous Source-Drain Diode Current
- 2.3a, b
13
T
C = 25 °C
TC = 70 °C
A = 25 °C
8.4
PD
Maximum Power Dissipation
W
2.77a, b
T
1.77a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
°C
IR/Convection
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Based on TC = 25 °C.
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)c
RthJA
37
7
45
°C/W
RthJC
Steady State
9.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 85 °C/W.
c. Case is defined as top surface of the package.
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
V
V
DS Temperature Coefficient
- 29
3.1
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS, ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 0.5
- 1.1
100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 70 °C
VDS - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
- 5
VGS = - 4.5 V, ID = - 1.5 A
0.043
0.058
0.075
10
0.053
0.071
0.120
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 2.5 V, ID = - 1 A
GS = - 2 V, ID = - 0.5 A
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 1.5 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1320
121
102
32.6
16.3
2.5
4.9
8
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 1.5 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 1.5 A
VGS = - 0.1 V, f = 1 MHz
pF
49
25
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
17
35
30
15
V
DD = - 15 V, RL = 10
ID - 1.5 A, VGEN = - 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
60
120
50
25
ns
Turn-On Delay Time
Rise Time
50
100
20
10
V
DD = - 15 V, RL = 10
ID - 1.5 A, VGEN = - 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
75
150
45
22
www.vishay.com
2
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
- 15
- 20
- 1.2
40
A
Pulse Diode Forward Current
Body Diode Voltage
IS = - 1.5 A, VGS = 0
- 0.73
21
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
15
IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
8
ns
tb
13
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
15
10
5
10
VGS = 5 V thru 2.5 V
8
TC = 25 °C
6
VGS = 2 V
4
TC = 125 °C
2
VGS = 1.5 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2400
2000
1600
1200
800
400
0
0.20
0.16
0.12
0.08
0.04
0.00
VGS = 2 V
Ciss
VGS = 2.5 V
VGS = 4.5 V
Coss
Crss
0
5
10
15
20
25
30
0
5
10
ID - Drain Current (A)
15
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
1.4
1.2
1.0
0.8
0.6
ID = 1.5 A
VDS = 15 V
ID = 1.5 A; VGS = 4.5 V
ID = 1.5 A; VGS = 2.5 V
8
6
VDS = 7.5 V
VDS = 24 V
4
ID = 0.5 A; VGS = 2 V
2
0
0
5
10
15
20
25
30
35
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.16
0.12
0.08
0.04
0.00
ID = 1.5 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
30
25
20
15
10
5
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)
*
10
1
100 us
1 ms
10 ms
100 ms
1 s
10 s
0.1
TA = 25 °C
DC
BVDSS Limited
10
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
12
9
16
12
8
6
4
3
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
T
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
Single Pulse
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH)
6 x Ø 0.24 to 0.26 Note 3
Solder Mask ~ Ø 0.25
C
B
A
1
2
Bump Note 2
e
e
Recommended Land
6 x Ø b
D
D
S
S
S
8497
G
XXX
s
e
e
s
Mark on Backside of Die
E
Notes (unless otherwise specified):
1. All dimensions are in millimeters.
2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter 0.30 to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
·
is location of pin 1.
Millimetersa
Nom.
Inches
Nom.
Dim.
Min.
0.510
0.220
0.290
0.300
Max.
0.590
0.280
0.310
0.320
Min.
Max.
A
A1
A2
b
0.575
0.0201
0.0087
0.0114
0.0118
0.0224
0.0098
0.0118
0.0122
0.0197
0.0098
0.0378
0.0575
0.0232
0.0110
0.0122
0.0126
0.250
0.300
0.310
e
0.500
s
0.230
0.920
1.420
0.250
0.270
1.000
1.500
0.0090
0.0362
0.0559
0.0106
0.0394
0.0591
D
0.960
E
1.460
Note:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63355.
www.vishay.com
8
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
SI8497DB 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI8497DB-T2-E1 | VISHAY | P-Channel 30 V (D-S) MOSFET | 获取价格 |
|
| SI8499DB | VISHAY | P-Channel 20 V (D-S) MOSFET | 获取价格 |
|
| SI8499DB-T2-E1 | VISHAY | P-Channel 20 V (D-S) MOSFET | 获取价格 |
|
| SI84_09 | DELTA | SMT Power Inductor | 获取价格 |
|
| SI85 | ETC | SMT Power Inductor | 获取价格 |
|
| SI85-100 | ETC | SMT Power Inductor | 获取价格 |
|
| SI85-100K | DELTA | SMT Power Inductor | 获取价格 |
|
| SI85-101 | ETC | SMT Power Inductor | 获取价格 |
|
| SI85-101K | DELTA | SMT Power Inductor | 获取价格 |
|
| SI85-102K | DELTA | SMT Power Inductor | 获取价格 |
|
SI8497DB 相关文章
三星业绩下滑引发人才危机，大批高级员工或跳槽SK海力士
- 2024-10-22
- 8
英特尔携手三星，剑指台积电：半导体代工市场或将迎来新格局
- 2024-10-22
- 10
高通骁龙8至尊版震撼登场：Oryon CPU性能跃升40%，功耗直降27%
- 2024-10-22
- 8
高通意外决定：骁龙X Elite迷你机全面取消，启动全额退款流程
- 2024-10-22
- 9
