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SI8800EDB_11

更新时间：2025-07-10 10:19:20
品牌：VISHAY
描述：N-Channel 20 V (D-S) MOSFET

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SI8800EDB_11 概述

N-Channel 20 V (D-S) MOSFET N沟道20 V （D -S ）的MOSFET

SI8800EDB_11 数据手册

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Si8800EDB  
Vishay Siliconix  
N-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)a  
2.8  
Qg (Typ.)  
Definition  
•
•
•
•
•
TrenchFET® Power MOSFET  
Ultra Small 0.8 mm x 0.8 mm Outline  
Ultra Thin 0.357 mm Height  
Typical ESD Protection 1500 V  
Compliant to RoHS Directive 2002/95/EC  
0.080 at VGS = 4.5 V  
0.090 at VGS = 2.5 V  
0.105 at VGS = 1.8 V  
0.150 at VGS = 1.5 V  
2.6  
20  
3.2 nC  
2.4  
2.0  
APPLICATIONS  
MICRO FOOT  
•
Portable Devices such as Cell Phones,  
Smart Phones and MP3 Players  
- Load Switch  
Bump Side View  
Backside View  
S
S
G
D
- Small Signal Switch  
2
1
4
D
3
R
G
Device Marking: 800  
xxx = Date/Lot Traceability Code  
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)  
S
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
8
VGS  
TA = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.8a  
2.2a  
2b  
Continuous Drain Current (TJ = 150 °C)  
ID  
1.6b  
A
IDM  
IS  
15  
Pulsed Drain Current  
TA = 25 °C  
TA = 25 °C  
0.7a  
0.4b  
0.9a  
0.6a  
0.5b  
0.3b  
- 55 to 150  
260  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipation  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
105  
Maximum  
135  
Unit  
Maximum Junction-to-Ambienta, d  
t 5 s  
°C/W  
Maximum Junction-to-Ambientb, e  
200  
260  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.  
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.  
d. Maximum under steady state conditions is 185 °C/W.  
e. Maximum under steady state conditions is 330 °C/W.  
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
VGS = 0 V, ID = 250 µA  
ID = 250 µA  
Drain-Source Breakdown Voltage  
20  
V
mV/°C  
V
V
DS Temperature Coefficient  
VDS/TJ  
VGS(th)/TJ  
VGS(th)  
18  
VGS(th) Temperature Coefficient  
- 2.3  
VDS = VGS , ID = 250 µA  
Gate-Source Threshold Voltage  
0.4  
10  
1
0.5  
6
VDS = 0 V, VGS  
=
4.5 V  
8 V  
IGSS  
Gate-Source Leakage  
V
DS = 0 V, VGS  
=
µA  
A
VDS = 20 V, VGS = 0 V  
1
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
V
DS = 20 V, VGS = 0 V, TJ = 55 °C  
10  
ID(on)  
VDS 5 V, VGS = 4.5 V  
V
GS 4.5 V, ID = 1 A  
GS 2.5 V, ID = 1 A  
GS 1.8 V, ID = 1 A  
0.066  
0.072  
0.082  
0.095  
10  
0.080  
0.090  
0.105  
0.150  
V
Drain-Source On-State Resistancea  
RDS(on)  
S
V
V
GS 1.5 V, ID = 0.5 A  
Forward Transconductancea  
gfs  
VDS = 10 V, ID = 1 A  
Dynamicb  
V
DS = 10 V, VGS = 8 V, ID = 1 A  
DS = 10 V, VGS = 4.5 V, ID = 1 A  
f = 1 MHz  
5.5  
3.2  
0.42  
0.5  
1
8.3  
5
Qg  
Total Gate Charge  
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
V
Gate Resistance  
k  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
65  
130  
170  
1800  
700  
50  
Rise Time  
85  
V
DD = 10 V, RL = 10   
I
D 1 A, VGEN = 4.5 V, Rg = 1   
Turn-Off Delay Time  
900  
350  
25  
Fall Time  
ns  
Turn-On Delay Time  
Rise Time  
40  
80  
V
DD = 10 V, RL = 10   
I
D 1 A, VGEN = 8 V, Rg = 1   
Turn-Off Delay Time  
1100  
350  
2200  
700  
Fall Time  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
Pulse Diode Forward Current  
Body Diode Voltage  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
0.7  
15  
A
IS = 1 A, VGS 0 V  
1
13  
5
1.5  
25  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
Notes:  
ns  
nC  
Qrr  
ta  
10  
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C  
8
ns  
tb  
5
a. Pulse test; pulse width 300 µs, duty cycle 2 %  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
-1  
-3  
-5  
-7  
-9  
10  
10  
10  
10  
10  
T
= 25 °C  
J
T
= 150 °C  
J
T
= 25 °C  
J
-11  
10  
0
3
6
9
12  
15  
1.5  
6
0
3
6
9
12  
15  
3.0  
15  
V
- Gate-to-Source Voltage (V)  
GS  
V
- Gate-to-Source Voltage (V)  
GS  
Gate Current vs. Gate-Source Voltage  
Gate Current vs. Gate-Source Voltage  
15  
12  
9
5
4
3
2
1
0
V
= 5 V thru 2 V  
GS  
V
= 1.5 V  
GS  
6
T
= 25 °C  
C
3
T
= 125 °C  
C
V
= 1 V  
GS  
T
= - 55 °C  
C
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.3  
V
0.6  
0.9  
1.2  
- Gate-to-Source Voltage (V)  
V
- Drain-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
0.15  
8
I
= 1 A  
D
0.12  
0.09  
0.06  
0.03  
0.00  
V
= 5 V  
DS  
6
4
2
0
V
= 1.5 V  
GS  
V
= 1.8 V  
GS  
V
= 10 V  
DS  
V
= 2.5 V  
GS  
V
= 4.5 V  
GS  
V
= 16 V  
DS  
0
3
6
9
12  
0
1
2
3
4
5
Q
- Total Gate Charge (nC)  
I
- Drain Current (A)  
g
D
On-Resistance vs. Drain Current  
Gate Charge  
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
10  
V
= 4.5 V, V  
= 2.5 V, V  
= 1.8 V; I = 1 A  
GS D  
GS  
GS  
T
= 150 °C  
J
T
= 25 °C  
J
1
V
= 1.5 V; I = 0.5 A  
D
GS  
0.1  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
T
- Junction Temperature (°C)  
V
- Source-to-Drain Voltage (V)  
J
SD  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
I
= 1.5 A; T = 125 °C  
J
D
I
= 250 μA  
D
I
= 0.5 A; T = 125 °C  
J
D
I
= 1.5 A; T = 25 °C  
J
D
I
= 0.5 A; T = 25 °C  
J
D
0
1
2
3
4
5
- 50 - 25  
0
25  
50  
75  
100 125 150  
V
- Gate-to-Source Voltage (V)  
T
- Temperature (°C)  
GS  
J
On-Resistance vs. Gate-to-Source Voltage  
Threshold Voltage  
14  
12  
10  
8
6
4
2
0
0.001  
0.01  
0.1  
1
10  
100  
1000  
Time (s)  
Single Pulse Power (Junction-to-Ambient)  
www.vishay.com  
4
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
100  
Limited by R  
*
DS(on)  
10  
1
100 μs  
1 ms  
10 ms  
T
= 25 °C  
0.1  
A
Single Pulse  
100 ms, 1 s  
10 s, DC  
BVDSS Limited  
10  
0.01  
0.1  
1
100  
V
- Drain-to-Source Voltage (V)  
DS  
* V  
> minimum V at which R  
is specified  
DS(on)  
GS  
GS  
Safe Operating Area, Junction-to-Ambient  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
T
- Ambient Temperature (°C)  
T
- Ambient Temperature (°C)  
A
A
Current Derating*  
Power Derating  
Note:  
When mounted on 1" x 1" FR4 with full copper.  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
0.05  
P
DM  
t
1
0.02  
t
2
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 185 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
0.01  
4. Surface Mounted  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.1  
P
DM  
0.05  
t
1
t
2
0.02  
t
1
1. Duty Cycle, D =  
t
2
2. Per Unit Base = R  
= 330 °C/W  
thJA  
(t)  
3. T - T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
100  
1000  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)  
www.vishay.com  
6
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Si8800EDB  
Vishay Siliconix  
PACKAGE OUTLINE  
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 mm x 2 mm, 0.4 mm PITCH)  
4 x Ø b  
S
D
S
800  
G
XXX  
s
e
Mark on Backside of die  
D
4 x Ø 0.205 to 0.225 Note 4  
Solder Mask ~ Ø 0.215  
2
3
4
1
e
Recommended Land  
Notes (Unless otherwise specified):  
1. All dimensions are in millimeters.  
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.  
3. Backside surface is coated with a Ti/Ni/Ag layer.  
4. Non-solder mask defined copper landing pad.  
5.  
·is location of pin 1.  
Millimetersa  
Nom.  
Inches  
Nom.  
Dim.  
Min.  
0.314  
0.127  
Max.  
0.400  
0.187  
Min.  
Max.  
A
0.357  
0.0124  
0.0050  
0.0141  
0.0062  
0.0157  
0.0074  
A1  
0.157  
A2  
0.187  
0.165  
0.200  
0.175  
0.400  
0.200  
0.800  
0.213  
0.185  
0.0074  
0.0064  
0.0079  
0.0068  
0.0157  
0.0078  
0.0314  
0.0084  
0.0072  
b
e
s
0.180  
0.760  
0.220  
0.840  
0.0070  
0.0299  
0.0086  
0.0330  
D
Notes:  
a. Use millimeters as the primary measurement.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?66700.  
Document Number: 66700  
S11-1145-Rev. B, 13-Jun-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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