SIA920DJ [VISHAY]
Dual N-Channel 8 V (D-S) MOSFET; 双N沟道8 V （D -S ）的MOSFET
| 型号： | SIA920DJ |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 8 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA920DJ
Vishay Siliconix
Dual N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
Qg (Typ.)
Definition
I
D (A)a
•
•
TrenchFET® Power MOSFET
0.027 at VGS = 4.5 V
0.031 at VGS = 2.5 V
0.036 at Vgs = 1.8 V
0.047 at Vgs = 1.5 V
0.110 at Vgs = 1.2 V
4.5
4.5
4.5
4.5
1.5
Thermally Enhanced PowerPAK®
SC-70 Package
4.8 nC
8
- Small Footprint Area
- Low On-Resistance
100 % Rg Tested
•
• Compliant to RoHS Directive 2002/95/EC
PowerPAK SC-70-6 Dual
APPLICATIONS
1
•
•
•
Load Switch with Low Voltage Drop
Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
Smart Phones, Tablet PCs, Portable Media Players
S1
2
G1
3
D1
D2
D1
D2
6
D1
D2
G2
5
2.05 mm
2.05 mm
S2
4
G1
G2
Ordering Information: SiA920DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
N-Channel MOSFET
N-Channel MOSFET
S1
S2
C H X
Part # code
X X X
Lot Traceability
and Date code
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
8
5
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
7.8
V
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
T
C = 70 °C
5
PD
Maximum Power Dissipation
W
1.9b, c
TA = 25 °C
TA = 70 °C
1.2b, c
- 55 to 150
260
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
52
Maximum
Unit
t 5 s
Steady State
65
16
°C/W
12.5
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
8
V
V
DS Temperature Coefficient
11
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.3
VDS = VGS , ID = 250 µA
0.35
10
0.7
100
1
V
IGSS
VDS = 0 V, VGS
=
5 V
nA
VDS = 8 V, VGS = 0 V
DS = 8 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS 4.5 V, ID = 5.3 A
VGS 2.5 V, ID = 4.9 A
VGS 1.8 V, ID = 4.6 A
VGS 1.5 V, ID = 1.5 A
VGS 1.2 V, ID = 0.5 A
VDS = 10 V, ID = 5.3 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
0.022
0.025
0.029
0.035
0.050
28
0.027
0.031
0.036
0.047
0.110
Drain-Source On-State Resistancea
RDS(on)
S
Forward Transconductancea
gfs
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
470
175
85
4.8
0.63
0.6
4
V
DS = 4 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
7.5
Qgs
Qgd
Rg
V
DS = 4 V, VGS = 4.5 V, ID = 6.9 A
f = 1 MHz
Gate-Source Charge
nC
Gate-Drain Charge
Gate Resistance
0.8
8
td(on)
tr
td(off)
tf
Turn-On Delay Time
5
10
25
40
15
Rise Time
12
20
7
V
DD = 10 V, RL = 1.9
ns
Turn-Off Delay Time
ID 5.5 A, VGEN = 4.5 V, Rg = 1
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
4.5
20
A
IS = 5.5 A, VGS 0 V
0.8
15
5
1.2
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
7.8
7.2
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
16
12
8
10
VGS = 5 V thru 2 V
8
VGS = 1.5 V
6
TC = 25 °C
4
TC = 125 °C
4
2
VGS = 1 V
1.5
TC = - 55 °C
0
0
0.0
0.5
1.0
2.0
0.0
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
0
VGS = 1.2 V
VGS = 1.5 V
Ciss
VGS = 1.8 V
VGS = 2.5 V
Coss
Crss
VGS = 4.5 V
0
4
8
12
16
20
0
2
4
6
8
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
5
ID = 6.9 A
VDS = 3 V
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5.3 A
VGS = 1.5 V; ID = 1.5 A
4
3
VDS = 6 V
VDS = 9.6 V
2
VGS = 1.2 V; ID = 0.5 A
1
0
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.08
0.06
0.04
0.02
0.00
ID = 5.3 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 250 μA
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
1000
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)
*
10
1
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
0.01
TA = 25 °C
BVDSS Limited
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
6
4
2
0
15
12
9
6
Package Limited
3
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 110 °C/W
thJA
Single Pulse
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63299.
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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