SIE874DF-T1-GE3 [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SIE874DF-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiE874DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
ID (A)a
Silicon Package
•
•
TrenchFET® Gen III Power MOSFET
Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size, ≤ 100 V
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Limit
Limit
0.00117 at V = 10 V
GS
258
60
20
45 nC
0.0016 at V = 4.5 V
GS
220
60
•
Package Drawing
www.vishay.com/doc?72945
•
•
•
PolarPAK
10
D
9
G
8
S
7
S
6
D
Compliant to RoHS Directive 2002/95/EC
6
7
8
9
10
D
APPLICATIONS
•
•
•
POL
OR-ing
DC/DC
D
D
D
S
G
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE874DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?65350
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
20
20
V
258 (Silicon Limit)
60a (Package Limit)
TC = 25 °C
60a
52b, c
42b, c
100
60a
4.3b, c
40
80
125
80
5.2b, c
3.3b, c
- 55 to 150
260
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
mJ
W
T
C = 70 °C
PD
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
Notes:
a. Package limit is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
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1
New Product
SiE874DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
0.8
Maximum
Unit
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)a, c
t ≤ 10 s
Steady State
24
1
2.7
°C/W
2.2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
20
V
V
DS Temperature Coefficient
20
- 6.5
1.7
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS , ID = 250 µA
1.0
25
2.2
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 20 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
10
On-State Drain Currenta
0.00095 0.00117
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
0.0013
110
0.0016
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
6200
1800
760
95
V
DS = 10 V, VGS = 0 V, f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 10 V, ID = 20 A
145
65
Qg
Total Gate Charge
45
nC
Qgs
Qgd
Rg
V
DS = 10 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
16
13
0.2
1.1
45
2.2
70
55
90
45
30
15
85
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 10 V, RL = 1 Ω
35
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
60
30
Turn-On Delay Time
Rise Time
20
ns
A
V
DD = 10 V, RL = 1 Ω
10
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
55
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
60
100
1.2
90
Body Diode Voltage
0.8
60
75
27
33
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
115
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
New Product
SiE874DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
20
16
12
8
V
GS
= 10 V thru 4 V
V
= 3 V
GS
80
60
40
20
0
T
C
= - 55 °C
T
C
= 25 °C
4
T
C
= 125 °C
1.5
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0016
0.0014
0.0012
0.0010
0.0008
0.0006
8000
7000
6000
5000
4000
3000
2000
1000
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
20
40
60
80
100
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 20 A
D
I
= 20 A
D
V
GS
= 10 V; 4.5 V
V
= 5 V
DS
6
V
DS
= 10 V
V
DS
= 16 V
4
2
0
- 50 - 25
0
T
25
50
75
100 125 150
0
20
40
60
80
100
Q
g
- Total Gate Charge (nC)
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
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New Product
SiE874DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.004
0.003
0.002
0.001
0.000
100
I
= 20 A
D
T
J
= 150 °C
10
T
J
= 25 °C
T
= 125 °C
= 25 °C
J
T
J
1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
I
= 250 µA
D
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
J
Threshold Voltage
100
Limited by R
*
DS(on)
1 ms
10
1
10 ms
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
BVDSS Limited
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
New Product
SiE874DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
120
100
80
300
250
200
150
60
100
40
Package Limited
50
0
20
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
www.vishay.com
5
New Product
SiE874DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 68 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65350.
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Document Number: 65350
S09-2033-Rev. A, 05-Oct-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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