SIHB25N50E-GE3 [VISHAY]
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2;
| 型号： | SIHB25N50E-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiHB25N50E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss
VDS (V) at TJ max.
DS(on) max. at 25 °C (Ω)
Qg (Max.) (nC)
550
)
R
VGS = 10 V
0.145
• Reduced switching and conduction losses
• Low gate charge (Qg)
86
14
Q
gs (nC)
gd (nC)
Q
25
• Avalanche energy rated (UIS)
Configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
D2PAK (TO-263)
APPLICATONS
• Hard switched topologies
• Power factor correction power supplies (PFC)
• Switch mode power supplies (SMPS)
• Computing
G
D
G
- PC silver box / ATX power supplies
• Lighting
S
S
N-Channel MOSFET
- Two stage LED lighting
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHB25N50E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
500
V
VGS
30
T
C = 25 °C
26
16
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed Drain Current a
IDM
50
Linear Derating Factor
Single Pulse Avalanche Energy b
0.2
W/°C
mJ
W
EAS
PD
273
Maximum Power Dissipation
250
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ, Tstg
-55 to +150
65
°C
V
DS = 0 V to 80 % VDS
dV/dt
V/ns
°C
25
Soldering Recommendations (Peak Temperature) c
for 10 s
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.4 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYP.
MAX.
62
UNIT
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
-
-
RthJC
0.5
S15-0493-Rev. A, 16-Mar-15
Document Number: 91646
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB25N50E
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
500
-
-
-
V
V/°C
V
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th)
-
2.0
-
0.59
Gate-Source Threshold Voltage (N)
-
4.0
100
1
VGS
VGS
=
=
20 V
30 V
-
nA
μA
Gate-Source Leakage
IGSS
IDSS
-
-
-
VDS = 500 V, VGS = 0 V
-
1
Zero Gate Voltage Drain Current
μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
25
0.145
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 12 A
-
0.125
6.6
Ω
VDS = 30 V, ID = 12 A
-
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
1980
105
8
-
-
-
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
Effective Output Capacitance, Energy
Related a
Co(er)
Co(tr)
-
-
105
285
-
-
VDS = 0 V to 400 V, VGS = 0 V
Effective Output Capacitance, Time
Related b
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
57
14
86
-
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
GS = 10 V
ID = 12 A, VDS = 400 V
nC
25
-
19
38
72
86
58
-
36
VDD = 400 V, ID = 12 A
Rg = 9.1 Ω, VGS = 10 V
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
57
29
Gate Input Resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.56
Ω
D
MOSFET symbol
showing the
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
IS
-
-
-
-
12
50
A
G
integral reverse
p - n junction diode
ISM
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
TJ = 25 °C, IS = 16.5 A, VGS = 0 V
-
-
-
-
-
1.2
V
ns
μC
A
338
5.3
29
-
-
-
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 25 V
Qrr
IRRM
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
.
.
S15-0493-Rev. A, 16-Mar-15
Document Number: 91646
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB25N50E
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
TJ = 25 °C
ID = 12 A
BOTTOM 5 V
VGS = 10 V
0
5
10
15
20
25
30
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
40
30
20
10
0
10 000
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
TJ = 150 °C
Ciss
1000
100
10
VGS = 0 V, f = 1 MHz
C
C
iss = Cgs + Cgd, Cds shorted
rss = Cgd
BOTTOM 5 V
Coss = Cds + Cgd
Coss
Crss
1
0
100
200
300
400
500
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
70
60
50
40
30
20
10
0
12
TJ = 25 °C
5000
10
8
Coss
Eoss
6
TJ = 150 °C
500
4
VDS = 28.6 V
2
50
0
0
5
10
15
20
25
0
100
200
300
400
500
VDS
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0493-Rev. A, 16-Mar-15
Fig. 6 - COSS and EOSS vs. VDS
Document Number: 91646
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB25N50E
Vishay Siliconix
www.vishay.com
24
20
16
12
8
30
24
18
12
6
VDS = 400 V
VDS = 250 V
DS = 100 V
V
4
0
0
0
20
40
60
80
100
120
25
50
75
100
125
150
Qg, Total Gate Charge (nC)
TC, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
100
650
625
600
575
550
525
500
TJ = 150 °C
10
TJ = 25 °C
1
475
ID = 250 μA
VGS = 0 V
1.2 1.4
0.1
450
0.2
0.4
0.6
0.8
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature
Operation in this Area
Limited by RDS(on)
100
IDM Limited
10
1
100 μs
Limited by RDS(on)
*
1 ms
10 ms
0.1
0.01
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S15-0493-Rev. A, 16-Mar-15
Document Number: 91646
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB25N50E
Vishay Siliconix
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
V
-
DD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
QGD
10 %
VGS
VG
td(on) tr
td(off) tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
VDS
50 kΩ
Vary tp to obtain
required IAS
12 V
0.2 µF
0.3 µF
D.U.T
IAS
+
-
RG
+
-
VDS
VDD
D.U.T.
VGS
10 V
0.01 Ω
3 mA
tp
IG
ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit
S15-0493-Rev. A, 16-Mar-15
Fig. 18 - Gate Charge Test Circuit
Document Number: 91646
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB25N50E
Vishay Siliconix
www.vishay.com
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91646.
S15-0493-Rev. A, 16-Mar-15
Document Number: 91646
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SIHB28N60EF-GE3
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
VISHAY
SIHB33N60E-GE3
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
VISHAY
SIHB33N60EF-GE3
Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
VISHAY
SIHB8N50D-GE3
Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
VISHAY
©2020 ICPDF网 联系我们和版权申明