SIHF640STL [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHF640STL |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：2115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
FEATURES
• Surface Mount
PRODUCT SUMMARY
VDS (V)
200
Available
• Low-Profile Through-Hole
R
DS(on) (Ω)
VGS = 10 V
0.18
RoHS*
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
Qg (Max.) (nC)
70
13
COMPLIANT
Q
Q
gs (nC)
gd (nC)
39
Configuration
Single
• Fully Avalanche Rated
• Lead (Pb)-free Available
D
I2PAK
(TO-262)
D2PAK
(TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
G
D
S
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRF640L/SiHF640L) is available for low-profile applications.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
IRF640STRRPbFa
SiHF640STR-E3a
IRF640STRRa
I2PAK (TO-262)
IRF640LPbF
SiHF640L-E3
IRF640L
IRF640SPbF
SiHF640S-E3
IRF640S
IRF640STRLPbFa
SiHF6340STL-E3a
IRF640STRLa
Lead (Pb)-free
SnPb
SiHF640S
SiHF640STLa
SiHF640STRa
SiHF640L
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
200
V
VGS
20
TC = 25 °C
TC =100°C
18
Continuous Drain Current
V
GS at 10 V
ID
11
A
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
IDM
72
1.0
W/°C
mJ
A
EAS
IAR
580
18
Repetiitive Avalanche Energya
EAR
13
mJ
T
C = 25 °C
3.1
Maximum Power Dissipation
PD
W
V/ns
°C
TA = 25 °C
130
Peak Diode Recovery dV/dtc, e
dV/dt
5.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, RG = 25 Ω, IAS = 18 A (see fig. 12).
c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
1
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)a
RthJA
-
-
°C/W
Maximum Junction-to-Case (Drain)
RthJC
1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 µA
200
-
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.29
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.0
100
25
250
0.18
-
VGS
VDS = 200 V, VGS = 0 V
DS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 Ab
VDS = 50 V, ID = 11 Ad
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
6.7
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
1300
430
130
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5d
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
pF
nC
-
70
13
39
-
ID = 18 A, VDS = 160 V,
see fig. 6 and 13b, c
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
Turn-On Delay Time
Rise Time
14
51
45
36
-
V
DD = 100 V, ID = 18 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
R
G = 9.1 Ω, RD = 5.4 Ω, see fig. 10b, c
-
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
18
72
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 18 A, VGS = 0 Vb
-
-
-
-
2.0
610
7.1
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
300
3.4
ns
µC
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb, c
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF640/SiHF640 data and test conditions.
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Document Number: 91037
S-81241-Rev. A, 07-Jul-08
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TJ = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
3
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91037
S-81241-Rev. A, 07-Jul-08
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T.
RG
+
-
V
A
DD
IAS
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
5
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91037
S-81241-Rev. A, 07-Jul-08
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91037.
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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