SIHF840LCL-GE3 [VISHAY]

TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power;
SIHF840LCL-GE3
型号: SIHF840LCL-GE3
厂家: VISHAY    VISHAY
描述:

TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
Definition  
• Ultra Low Gate Charge  
500  
RDS(on) ()  
VGS = 10 V  
0.85  
• Reduced Gate Drive Requirement  
• Enhanced 30 V VGS Rating  
• Reduced Ciss, Coss, Crss  
• Extremely High Frequency Operation  
• Repetitive Avalanche Rated  
• Compliant to RoHS Directive 2002/95/EC  
Qg (Max.) (nC)  
39  
10  
Q
Q
gs (nC)  
gd (nC)  
19  
Configuration  
Single  
DESCRIPTION  
D
This new series of low charge Power MOSFETs achieve  
significantly lower gate charge then conventional Power  
MOSFETs. Utilizing the new LCDMOS (low charge device  
Power MOSFETs) technology, the device improvements are  
achieved without added product cost, allowing for reduced  
gate drive requirements and total system savings. In  
addition, reduced switching losses and improved efficiency  
are achievable in a variety of high frequency applications.  
Frequencies of a few MHz at high current are possible using  
the new low charge Power MOSFETs.  
D2PAK (TO-263)  
I2PAK (TO-262)  
G
G
D
S
D
S
G
S
These device improvements combined with the proven  
ruggedness and reliability that characterize Power  
MOSFETs offer the designer a new power transistor  
standard for switching applications.  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
SiHF840LCS-GE3  
IRF840LCSPbF  
SiHF840LCS-E3  
I2PAK (TO-262)  
SiHF840LCL-GE3  
IRF840LCLPbF  
SiHF840LCL-E3  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
500  
V
30  
TC = 25 °C  
C = 100 °C  
8.0  
Continuous Drain Current  
VGS at 10 V  
ID  
T
5.1  
A
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
28  
1.0  
W/°C  
mJ  
A
EAS  
IAR  
510  
8.0  
Repetiitive Avalanche Energya  
EAR  
13  
mJ  
TC = 25 °C  
125  
Maximum Power Dissipation  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
Peak Diode Recovery dV/dtc, e  
dV/dt  
3.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).  
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRF840LC, SiHF840LC data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYP.  
MAX.  
40  
UNIT  
Maximum Junction-to-Ambient  
(PCB Mounted, Steady-State)a  
RthJA  
-
-
°C/W  
Maximum Junction-to-Case (Drain)  
RthJC  
1.0  
Note  
a. When mounted on 1" square PCB (FR-4 or G-10 material).  
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS  
VDS/TJ  
VGS(th)  
IGSS  
VGS = 0, ID = 250 μA  
Reference to 25 °C, ID = 1 mAc  
VDS = VGS, ID = 250 μA  
500  
-
-
-
V
V/°C  
V
VDS Temperature Coefficient  
-
2.0  
-
0.63  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
-
-
-
-
-
-
4.0  
100  
25  
250  
0.85  
-
VGS  
VDS = 500 V, VGS = 0 V  
DS = 400 V, VGS = 0 V, TJ = 125 °C  
VGS = 10 V  
ID = 4.8 Ab  
VDS = 50 V, ID = 4.8 Ab  
=
20 V  
nA  
-
Zero Gate Voltage Drain Current  
IDSS  
μA  
V
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
-
4.0  
S
Input Capacitance  
Ciss  
Coss  
Crss  
Qg  
-
-
-
-
-
-
-
-
-
-
1100  
170  
18  
-
-
-
VGS = 0 V,  
DS = 25 V,  
f = 1.0 MHz, see fig. 5c  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
V
pF  
nC  
-
39  
10  
19  
-
ID = 8.0 A, VDS = 400 V,  
see fig. 6 and 13b, c  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
td(on)  
tr  
VGS = 10 V  
-
-
Turn-On Delay Time  
Rise Time  
12  
25  
27  
19  
-
V
DD = 250 V, ID = 8.0 A,  
ns  
Rg = 9.1 , RD = 30 , see fig. 10b, c  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
-
-
Drain-Source Body Diode Characteristics  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
Continuous Source-Drain Diode Current  
Pulsed Diode Forward Currenta  
IS  
-
-
-
-
8.0  
28  
A
G
ISM  
S
Body Diode Voltage  
VSD  
trr  
TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb  
-
-
-
-
2.0  
740  
4.5  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
490  
3.0  
ns  
μC  
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μsb, c  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width 300 μs; duty cycle 2 %.  
c. Uses SiHF840LC data and test conditions.  
www.vishay.com  
2
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
VGS  
Top  
15 V  
10 V  
8.0 V  
7.0 V  
6.0 V  
5.5 V  
5.0 V  
101  
100  
101  
150 °C  
25 °C  
Bottom 4.5 V  
100  
4.5 V  
10-1  
20 µs Pulse Width  
TC = 25 °C  
20 µs Pulse Width  
DS = 50 V  
V
10-1  
100  
101  
4
5
6
7
8
9
10  
VDS, Drain-to-Source Voltage (V)  
91068_01  
91068_03  
VGS, Gate-to-Source Voltage (V)  
Fig. 1 - Typical Output Characteristics  
Fig. 3 - Typical Transfer Characteristics  
3.0  
VGS  
ID = 8.0 A  
Top  
VGS = 10 V  
101  
15 V  
10 V  
2.5  
2.0  
1.5  
1.0  
0.5  
8.0 V  
7.0 V  
6.0 V  
5.5 V  
5.0 V  
4.5 V  
4.5 V  
100  
Bottom  
10-1  
20 µs Pulse Width  
TC = 150 °C  
0.0  
10-1  
100  
101  
- 60 - 40 - 20  
0
20 40 60 80  
120 140 160  
100  
TJ, Junction Temperature (°C)  
VDS, Drain-to-Source Voltage (V)  
91068_04  
91068_02  
Fig. 2 - Typical Output Characteristics  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
2400  
VGS = 0 V, f = 1 MHz  
Ciss = Cgs + Cgd, Cds Shorted  
2000  
1600  
1200  
800  
400  
0
Crss = Cgd  
Coss = Cds + Cgd  
150 °C  
101  
Ciss  
Coss  
25 °C  
Crss  
100  
VGS = 0 V  
1.4 1.6  
100  
101  
0.6  
0.8  
1.0  
1.2  
VSD, Source-to-Drain Voltage (V)  
VDS, Drain-to-Source Voltage (V)  
91068_07  
91068_05  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
Fig. 7 - Typical Source-Drain Diode Forward Voltage  
103  
5
20  
ID = 8.0 A  
Operation in this area limited  
by RDS(on)  
VDS = 400 V  
2
16  
12  
8
102  
5
V
DS = 250 V  
V
DS = 100 V  
2
10  
5
10 µs  
100 µs  
1 ms  
2
1
5
4
10 ms  
TC = 25 °C  
TJ = 150 °C  
Single Pulse  
For test circuit  
see figure 13  
2
0.1  
0
2
5
2
5
2
5
1
10  
102  
103  
0
8
16  
24  
32  
40  
48  
VDS, Drain-to-Source Voltage (V)  
QG, Total Gate Charge (nC)  
91068_08  
91068_06  
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage  
Fig. 8 - Maximum Safe Operating Area  
www.vishay.com  
4
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
RD  
VDS  
VGS  
8.0  
6.0  
4.0  
2.0  
0.0  
D.U.T.  
Rg  
+
V
-
DD  
10 V  
Pulse width 1 µs  
Duty factor 0.1 %  
Fig. 10a - Switching Time Test Circuit  
VDS  
90 %  
25  
50  
75  
100  
125  
150  
TC, Case Temperature (°C)  
91068_09  
10 %  
VGS  
td(on) tr  
td(off) tf  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
Fig. 10b - Switching Time Waveforms  
10  
1
D = 0.5  
PDM  
0.2  
0.1  
0.1  
t1  
0.05  
t2  
Notes:  
0.02  
Single Pulse  
0.01  
1. Duty Factor, D = t1/t2  
2. Peak Tj = PDM x ZthJC + TC  
(Thermal Response)  
10-2  
10-5  
10-4  
10-3  
10-2  
0.1  
1
10  
t1, Rectangular Pulse Duration (s)  
91068_11  
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
VDS  
15 V  
tp  
Driver  
L
VDS  
Rg  
D.U.T  
+
-
V
A
DD  
IAS  
IAS  
20 V  
0.01 Ω  
tp  
Fig. 12a - Unclamped Inductive Test Circuit  
Fig. 12b - Unclamped Inductive Waveforms  
1200  
ID  
Top  
3.6 A  
5.1 A  
1000  
800  
600  
400  
200  
Bottom 8.0 A  
VDD = 50 V  
0
125  
25  
75  
100  
150  
50  
91068_12c  
Starting TJ, Junction Temperature (°C)  
Fig. 12c - Maximum Avalanche Energy vs. Drain Current  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
10 V  
12 V  
0.2 µF  
0.3 µF  
QGS  
QGD  
+
-
VDS  
D.U.T.  
VG  
VGS  
3 mA  
Charge  
IG  
ID  
Current sampling resistors  
Fig. 13a - Basic Gate Charge Waveform  
Fig. 13b - Gate Charge Test Circuit  
www.vishay.com  
6
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit layout considerations  
Low stray inductance  
Ground plane  
D.U.T.  
Low leakage inductance  
current transformer  
-
+
-
-
+
Rg  
dV/dt controlled by Rg  
Driver same type as D.U.T.  
ISD controlled by duty factor “D”  
D.U.T. - device under test  
+
-
VDD  
Driver gate drive  
P.W.  
P.W.  
D =  
Period  
Period  
VGS = 10 Va  
D.U.T. lSD waveform  
D.U.T. VDS waveform  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
Diode recovery  
dV/dt  
VDD  
Re-applied  
voltage  
Body diode forward drop  
Inductor current  
ISD  
Ripple 5 %  
Note  
a. VGS = 5 V for logic level devices  
Fig. 14 - For N-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?91068.  
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Package Information  
Vishay Siliconix  
TO-263AB (HIGH VOLTAGE)  
A
B
(Datum A)  
3
4
A
A
E
c2  
H
L1  
4
Gauge  
plane  
0° to 8°  
4
B
5
Detail A  
Seating plane  
D
H
L
C
C
A1  
L3  
L4  
Detail “A”  
1
2
3
L2  
Rotated 90° CW  
B
B
scale 8:1  
A
2 x b2  
2 x b  
c
E
M
M
B
0.010  
A
M
0.004  
B
2 x e  
Base  
metal  
5
D1  
4
Plating  
(c)  
b1, b3  
5
c1  
(b, b2)  
Lead tip  
4
E1  
Section B - B and C - C  
Scale: none  
View A - A  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
DIM.  
A
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.38  
MAX.  
4.83  
0.25  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.330  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
DIM.  
D1  
E
MIN.  
6.86  
MAX.  
MIN.  
MAX.  
-
10.67  
-
0.270  
0.380  
0.245  
-
0.420  
-
A1  
b
9.65  
6.22  
E1  
e
b1  
b2  
b3  
c
2.54 BSC  
0.100 BSC  
H
14.61  
15.88  
2.79  
1.65  
1.78  
0.575  
0.625  
0.110  
0.066  
0.070  
L
1.78  
0.070  
L1  
L2  
L3  
L4  
-
-
-
-
c1  
c2  
D
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
ECN: S-82110-Rev. A, 15-Sep-08  
DWG: 5970  
Notes  
1. Dimensioning and tolerancing per ASME Y14.5M-1994.  
2. Dimensions are shown in millimeters (inches).  
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the  
outmost extremes of the plastic body at datum A.  
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.  
5. Dimension b1 and c1 apply to base metal only.  
6. Datum A and B to be determined at datum plane H.  
7. Outline conforms to JEDEC outline to TO-263AB.  
Document Number: 91364  
Revision: 15-Sep-08  
www.vishay.com  
1
AN826  
Vishay Siliconix  
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead  
0.420  
(10.668)  
0.145  
(3.683)  
0.135  
(3.429)  
0.200  
0.050  
(5.080)  
(1.257)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
Document Number: 73397  
11-Apr-05  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1

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SIHF840S-E3

Power MOSFET
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SIHF840S-GE3

TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY

SIHF840STL

Power MOSFET
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SIHF840STL-E3

Power MOSFET
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SIHF840STR

Power MOSFET
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SIHF840STR-E3

Power MOSFET
VISHAY

SIHF840STRL-GE3

TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY