SIHF9Z34STL [VISHAY]

Power MOSFET; 功率MOSFET


型号：	SIHF9Z34STL
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET
文件：	总8页 (文件大小：2460K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced Process Technology

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Surface Mount (IRF9Z34S/SiHF9Z34S)

R_DS(on)(Ω)

V_GS= - 10 V

0.14

_{Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)}RoHS*

•

COMPLIANT

Q_g(Max.) (nC)

9.9

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• P-Channel

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application.

P-Channel MOSFET

The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is

available for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRF9Z34SPbF

SiHF9Z34S-E3

IRF9Z34S

IRF9Z34STRLPbF^a

SiHF9Z34STL-E3^a

IRF9Z34STRL^a

IRF9Z34STRRPbF^a

SiHF9Z34STR-E3^a

IRF9Z34STRR^a

IRF9Z34LPbF

SiHF9Z34L-E3

IRF9Z34L

Lead (Pb)-free

SnPb

SiHF9Z34S

SiHF9Z34STL^a

SiHF9Z34STR^a

SiHF9Z34L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 60

V_GS

T_C= 25 °C

T_C=100°C

- 18

- 13

- 72

0.59

370

- 18

8.8

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

Repetiitive Avalanche Energy^a

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

WORK-IN-PROGRESS

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

3.7

UNIT

T_C= 25 °C

T_A= 25 °C

Maximum Power Dissipation

P_D

Peak Diode Recovery dV/dt^{c, e}

dV/dt

- 4.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 1.3 mH, R_G= 25 Ω, I_AS= - 18 A (see fig. 12).

c. I_SD≤ - 18 A, dI/dt ≤ 170 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Uses IRF9Z34/SiHF9Z34 data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient (PCB

Mounted, steady-state)^a

R_thJA

°C/W

Maximum Junction-to-Case (Drain)

R_thJC

1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

V_DS

ΔV_DS/T_J

V_GS(th)

I_GSS

V_GS= 0 V, I_D= - 250 µA

- 60

V/°C

_DSTemperature Coefficient

Reference to 25 °C, I_D= - 1 mA^c

V_DS= V_GS, I_D= - 250 µA

- 0.06

Gate-Source Threshold Voltage

Gate-Source Leakage

- 2.0

- 4.0

100

- 100

- 500

0.14

V_GS

20 V

V_DS= - 60 V, V_GS= 0 V

Zero Gate Voltage Drain Current

I_DSS

µA

_DS= - 48 V, V_GS= 0 V, T_J= 150 °C

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

V_GS= - 10 V

V_DS= - 25 V, I_D= - 11 A^c

I_D= - 11 A^b

5.9

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

C_iss

C_oss

C_rss

Q_g

1100

620

100

V_GS= 0 V,

_DS= - 25 V,

f = 1.0 MHz, see fig. 5^c

9.9

I_D= - 18 A, V_DS= - 48 V,

see fig. 6 and 13^{b, c}

Q_gs

Q_gd

t_d(on)

t_r

_GS= - 10 V

120

_DD= - 30 V, I_D= - 18 A,

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

_G= 12 Ω, R_D= 1.5 Ω, see fig. 10^{b, c}

www.vishay.com

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain-Source Body Diode Characteristics

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current^a

I_S

- 18

- 72

I_SM

Body Diode Voltage

V_SD

t_rr

T_J= 25 °C, I_S= - 18 A, V_GS= 0 V^b

- 6.3

200

520

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

100

280

T_J= 25 °C, I_F= - 18 A, dI/dt = 100 A/µs^{b, c}

Q_rr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRF9Z34/SiHF9Z34 data and test conditions.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 2 - Typical Output Characteristics

Fig. 1 - Typical Output Characteristics

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Drain Current vs. Case Temperature

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

t_d(on)t_rt_d(off)t_f

V_GS

10 %

90 %

V_DS

Fig. 8 - Maximum Safe Operating Area

Fig. 10b - Switching Time Waveforms

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

I_AS

V_DS

Vary t_pto obtain

required I_AS

V_DS

D.U.T.

I_AS

R _G

V_DD

t_p

- 10 V

0.01 Ω

t_p

V_DS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

www.vishay.com

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Current regulator

Same type as D.U.T.

50 kΩ

Q_G

- 10 V

12 V

0.2 µF

0.3 µF

Q_GS

Q_GD

D.U.T.

V_G

V_GS

- 3 mA

Charge

I_G

I_D

Current sampling resistors

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

Fig. 13b - Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

Circuit layout considerations

•

Low stray inductance

Ground plane

•

Low leakage inductance

current transformer

R_G

•

dV/dt controlled by R_G

I_SDcontrolled by duty factor "D"

D.U.T. - device under test

V_DD

Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D =

P.W.

= - 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Ripple ≤ 5 %

Inductor current

V_GS= - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91093.

Document Number: 91093

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

SIHF9Z34STL [VISHAY]

相关型号：

SIHF9Z34STL-E3

SIHF9Z34STR

SIHF9Z34STR-E3

SIHF9Z34STRL-GE3

SIHF9Z34STRR-GE3

SIHFB11N50A

SIHFB11N50A-E3

SIHFB13N50A

SIHFB13N50A

SIHFB13N50A-E3

SIHFB16N50K

SIHFB16N50K