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SIHFP17N50L-E3 [VISHAY]

Power MOSFET; 功率MOSFET
SIHFP17N50L-E3
型号： SIHFP17N50L-E3
厂家： VISHAY    VISHAY
描述：

Power MOSFET
功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• SuperFast Body Diode Eliminates the Need  
For External Diodes in ZVS Applications  
PRODUCT SUMMARY  
VDS (V)  
500  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.28  
• Low Gate Charge Results in Simple Drive  
Requirement  
RoHS*  
Qg (Max.) (nC)  
130  
33  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Enhanced dV/dt Capabilities Offer Improved  
Ruggedness  
59  
Configuration  
Single  
• Higher Gate Voltage Threshold Offers Improved Noise  
Immunity  
D
TO-247  
• Lead (Pb)-free Available  
APPLICATIONS  
G
• Zero Voltage Switching SMPS  
• Telecom and Server Power Supplies  
• Uninterruptible Power Supply  
• Motor Control applications  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-247  
IRFP17N50LPbF  
SiHFP17N50L-E3  
IRFP17N50L  
Lead (Pb)-free  
SnPb  
SiHFP17N50L  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
500  
30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
16  
Continuous Drain Current  
VGS at 10 V  
ID  
11  
A
Pulsed Drain Currenta  
IDM  
64  
Linear Derating Factor  
1.8  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
390  
16  
EAR  
22  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
220  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
13  
- 55 to + 150  
300d  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).  
c. ISD ≤ 16 A, dI/dt ≤ 347 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYP.  
MAX.  
UNIT  
Maximum Junction-to-Ambient  
RthJA  
-
0.50  
-
62  
-
Case-to-Sink, Flat, Greased Surface  
Maximum Junction-to-Case (Drain)  
RthCS  
°C/W  
0.56  
RthJC  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS  
ΔVDS/TJ  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
Reference to 25 °C, ID = 1 mAd  
VDS = VGS, ID = 250 µA  
500  
-
-
-
V
V/°C  
-
3.0  
-
0.60  
-
5.0  
100  
50  
2.0  
0.32  
-
V
VGS  
VDS = 500 V, VGS = 0 V  
VDS = 400 V, VGS = 0 V, TJ = 125 °C  
VGS = 10 V  
ID = 9.9 Ab  
VDS = 50 V, ID = 9.9 Ab  
=
30 V  
-
nA  
-
-
Zero Gate Voltage Drain Current  
IDSS  
µA  
-
-
0.28  
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
-
Ω
11  
S
Input Capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
2760  
325  
37  
-
-
-
-
-
-
VGS = 0 V,  
DS = 25 V,  
f = 1.0 MHz, see fig. 5  
Output Capacitance  
V
Reverse Transfer Capacitance  
V
V
DS = 1.0 V , f = 1.0 MHz  
3690  
84  
pF  
Output Capacitance  
Coss  
DS = 400 V , f = 1.0 MHz  
V
GS = 0 V  
Effective Output Capacitance  
C
oss eff.  
159  
VDS = 0 V to 400 V  
Effective Output Capacitance  
(Energy Related)  
Coss eff. (ER)  
-
120  
-
Internal Gate Resistance  
Total Gate Charge  
Rg  
Qg  
f = 1 MHz, open drain  
-
-
1.4  
-
-
Ω
130  
ID = 16 A, VDS = 400 V  
see fig. 7 and 15b  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
VGS = 10 V  
-
-
-
-
33  
59  
nC  
Turn-On Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
21  
51  
50  
28  
-
-
-
-
V
R
DD = 250 V, ID = 16 A  
G = 7.5 Ω, VGS = 10 V  
see fig. 14a & 14bb  
ns  
A
Turn-Off Delay Time  
Fall Time  
Drain-Source Body Diode Characteristics  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
Continuous Source-Drain Diode Current  
IS  
-
-
-
-
16  
64  
G
Pulsed Diode Forward Currenta  
Body Diode Voltage  
ISM  
S
VSD  
TJ = 25 °C, IS = 16 A, VGS = 0 Vb  
-
-
-
-
-
-
-
1.5  
250  
330  
710  
1210  
11  
V
TJ = 25 °C  
170  
220  
470  
810  
7.3  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
trr  
ns  
TJ = 125 °C  
TJ = 25 °C  
TJ =1 25 °C  
IF = 16 A,  
dI/dt = 100 A/µsb  
Qrr  
µC  
Reverse Recovery Current  
Forward Turn-On Time  
IRRM  
ton  
TJ = 25 °C  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.  
c. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising fom 0 to 80 % VDS  
.
COSS eff. (ER) is a fixed capacitance that stores the same energy as COSS while VDS is rising fom 0 to 80 % VDS.  
www.vishay.com  
2
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100  
100  
VGS  
°
T = 150 C  
J
TOP  
15V  
12V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
10  
1
10  
1
BOTTOM 5.0V  
°
T = 25 C  
J
5.0V  
0.1  
0.01  
20µs PULSE WIDTH  
Tj = 25°C  
V
= 50V  
DS  
20µs PULSE WIDTH  
0.1  
4.0  
5.0  
6.0  
7.0  
8.0 9.0 10.0  
0.1  
1
10  
100  
V
, Gate-to-Source Voltage (V)  
GS  
V
, Drain-to-Source Voltage (V)  
DS  
Fig. 1 - Typical Output Characteristics  
Fig. 3 - Typical Transfer Characteristics  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
10  
1
16A  
=
I
D
VGS  
TOP  
15V  
12V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
BOTTOM 5.0V  
5.0V  
20µs PULSE WIDTH  
Tj = 150°C  
V
=10V  
GS  
0.1  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
0.1  
1
10  
100  
T , Junction Temperature ( C)  
J
V
, Drain-to-Source Voltage (V)  
DS  
Fig. 2 - Typical Output Characteristics  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
www.vishay.com  
3
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
20  
16  
12  
8
100000  
I
D
=
16A  
V
C
= 0V,  
f = 1 MHZ  
, C SHORTED  
gd ds  
GS  
V
V
V
= 400V  
= 250V  
= 100V  
= C + C  
DS  
DS  
DS  
iss  
gs  
C
= C  
gd  
rss  
C
= C + C  
oss  
ds gd  
10000  
1000  
100  
Ciss  
Coss  
Crss  
4
10  
0
0
30  
60  
90  
120  
150  
1
10  
100  
1000  
Q
, Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
20  
15  
10  
5
100  
°
T = 150 C  
J
10  
1
°
T = 25 C  
J
0
V
= 0 V  
GS  
0.1  
0.2  
0
100  
V
200  
300  
400  
500  
600  
0.6  
0.9  
1.3  
1.6  
V
,Source-to-Drain Voltage (V)  
SD  
Drain-to-Source Voltage (V)  
DS,  
Fig. 8 - Typical Source-Drain Diode Forward Voltage  
Fig. 6 - Typ. Output Capacitance Stored Energy vs. VDS  
www.vishay.com  
4
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
RD  
VDS  
VGS  
20  
16  
12  
8
D.U.T.  
RG  
+
V
-
DD  
10 V  
Pulse width ≤ 1 µs  
Duty factor ≤ 0.1 %  
Fig. 10a - Switching Time Test Circuit  
VDS  
4
90 %  
0
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
10 %  
VGS  
td(on) tr  
td(off) tf  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
Fig. 10b - Switching Time Waveforms  
1
D = 0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
SINGLE PULSE  
0.01  
(THERMAL RESPONSE)  
0.01  
P
2
DM  
t
1
t
2
Notes:  
1. Duty factor D =t / t  
1
2. Peak T =P  
x Z  
+ T  
C
J
DM  
thJC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
www.vishay.com  
5
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
1000  
800  
640  
480  
320  
160  
0
OPERATION IN THIS AREA LIMITED  
I
D
BY R  
DS(on)  
TOP  
7A  
10A  
BOTTOM 16A  
100  
10us  
10  
1
100us  
1ms  
10ms  
°
T = 25 C  
C
J
°
T = 150 C  
Single Pulse  
0.1  
10  
100  
1000  
10000  
25  
50  
75  
100  
125  
150  
°
V
, Drain-to-Source Voltage (V)  
Starting T , Junction Temperature ( C)  
DS  
J
Fig. 12 - Maximum Safe Operating Area  
Fig. 13 - Maximum Avalanche Energy vs. Drain Current  
VDS  
15 V  
tp  
Driver  
L
V
DS  
D.U.T  
AS  
R
G
+
-
V
DD  
I
A
20 V  
IAS  
0.01Ω  
t
p
Fig. 14a - Unclamped Inductive Test Circuit  
Fig. 14b - Unclamped Inductive Waveforms  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
10 V  
12 V  
0.2 µF  
0.3 µF  
QGS  
QGD  
+
-
VDS  
D.U.T.  
VG  
VGS  
3 mA  
Charge  
IG  
ID  
Current sampling resistors  
Fig. 15a - Basic Gate Charge Waveform  
Fig. 15b - Gate Charge Test Circuit  
www.vishay.com  
6
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
IRFP17N50L, SiHFP17N50L  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit Layout Considerations  
Low Stray Inductance  
• Ground Plane  
D.U.T  
•
•
Low Leakage Inductance  
Current Transformer  
-
+
-
-
+
RG  
• dV/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
dI/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dV/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig. 16. For N-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?91205.  
Document Number: 91205  
S-Pending-Rev. A, 16-Jun-08  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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