SIP21301LH-15-E3 [VISHAY]

Analog Circuit, CMOS, PDSO8;
SIP21301LH-15-E3
型号: SIP21301LH-15-E3
厂家: VISHAY    VISHAY
描述:

Analog Circuit, CMOS, PDSO8

光电二极管
文件: 总11页 (文件大小:593K)
中文:  中文翻译
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SiP21301  
Vishay Siliconix  
Series Linear Regulator Controller  
FEATURES  
DESCRIPTION  
Programmable Non Rush Current on Start up  
SiP21301 is a single channel series regulator controller to  
drive N-Channel MOSFET. It is the perfect choice for the low  
voltage, high current application.  
This controller provides the complete features, such as  
non-rush current on soft start-up, short circuit protection and  
thermal shutdown.  
In addition, it has under-voltage lock-out for safe operation.  
SiP21301 is designed to maintain regulation while delivering  
up to 7 A peak current, making it ideal for systems that have  
a high surge current upon turn-on.  
SiP21301 provides an adjustable output as well as fixed  
output voltage options 1.2 V and 1.5 V.  
(NRCS)  
Short Circuit Protection (SCP)  
Thermal Shutdown  
UVLO and Latch Function  
Fixed 1.2 V and 1.5 V Output Voltage Options  
N-Channel MOSFET driver  
MSOP8 Package  
RoHS  
COMPLIANT  
APPLICATIONS  
Game Console  
Set Top Box  
SiP21301 is available in a lead (Pb)-free MSOP8 package  
for operating over temperature range (- 10 °C to 100 °C).  
TYPICAL APPLICATION CIRCUIT  
Q1  
V
OUT  
V
IN  
R2’  
U1  
NRCS/SC  
R2  
V
D
C
IN  
GND  
EN  
V
G
10 µF  
SiP21301  
V
S
EN  
5 V  
V
CC  
V
FB  
R1’  
C
NRCS  
C
VCC  
R1  
0.1 µF  
1 µF  
GND  
GND  
SiP21301 Adjustable Version  
Figure 1.  
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
www.vishay.com  
1
SiP21301  
Vishay Siliconix  
Q1  
V
OUT  
V
IN  
U1  
NRCS/SC  
V
D
V
V
C
G
IN  
GND  
EN  
10 µF  
SiP21301  
S
EN  
5 V  
V
FB  
V
CC  
C
VCC  
1 µF  
GND  
GND  
SiP21301 - Fixed Version  
Figure 2.  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
Unit  
Supply Input Voltage (VCC  
)
)
- 0.3 to 6  
- 0.3 to 6  
- 0.3 to 6  
666  
Drain Voltage (VD)  
V
Enable Input Voltage (VEN  
Power Dissipationa (Pd)  
mW  
°C  
Storage Temperature (Tstg  
)
- 65 to 150  
150  
Maximum Junction Temperature  
Package Thermal Resistanceb (θJA  
)
150  
°C/W  
Notes:  
a. Device mounted with all leads soldered or welded to PC board.  
b. Derate 6.6 mW/°C above TA = 25 °C.  
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,  
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is  
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
SiP21301  
Vishay Siliconix  
RECOMMENDED OPERATING RANGE  
Parameter  
Limit  
Unit  
Supply Voltage (VCC  
Drain Voltage (VD)  
)
4.5 to 5.5  
0.65 to 5.5  
- 0.3 to 5.5  
0.001 to 1  
0.65 to 2.5  
- 10 to 100  
V
Enable Input Voltage (VEN  
)
Capacitor On NRCS/SCP Terminal (CNRCS  
Maximum Output Voltage Range (VO)  
)
µf  
V
Operating Temperature Range (TOPR  
)
°C  
ELECTRICAL SPECIFICATIONS  
Test Conditions  
CC = 5 V, VD = VIN = 3.3 V,VEN = 3 V,  
V
R1 = R1' = ∞ Ω, R2 = R2' = 0 Ω  
TA = 25 °C.  
Unless Otherwise Specified  
Parameter  
Symbol  
Temp  
Mina  
Typb  
Maxa  
Unit  
Supply Section  
Supply Current  
ICC  
ISD  
Room  
Room  
Room  
Room  
1.0  
0.1  
0.1  
0.5  
1.7  
10  
mA  
µA  
VEN = 0 V  
VCC = 4.5 V to 5.5 V, IO = 50 mA  
IO = 0 A to 3 A  
Shutdown Supply Current  
Line Regulation  
ΔVO/ΔVCC  
ΔVO/ΔIO  
0.5  
10  
%/V  
mV  
Load Regulation  
Adjustable Version Only  
Feedback Voltage 1  
VFB1  
VFB2  
IO = 50 mA  
Room  
Full  
0.643  
0.634  
0.650  
0.650  
0.657  
0.666  
IO = 50 mA, VCC = 4.5 V to 5.5 V,  
TA = - 10 °C to 100 °C  
Feedback Voltage 2  
Output Voltage  
V
nA  
%
R1 = R1’ = 3.9 kΩ  
R2 = R2’ = 3.3 kΩ  
VO  
IFB  
Room  
Room  
1.2  
80  
V
FB Input Bias Current  
Fixed Version Only  
VFB1  
VFB2  
IO = 50 mA  
Feedback Voltage 1  
Room  
Full  
- 1.0  
- 2.5  
0
0
1.0  
2.5  
IO = 50 mA, VCC = 4.5 V to 5.5 V,  
TA = - 10 °C to 100 °C  
Feedback Voltage 2  
Enable Section  
VENH  
VENL  
IEN  
High Level Enable Input Voltage  
Low Level Enable Input Voltage  
Room  
Room  
Room  
2
V
0.8  
10  
VEN = 3 V  
Enable Input Current  
Source Section  
7
µA  
VS Input Bias Current  
Room  
Room  
1.2  
2.4  
mA  
mA  
mA  
V
S Stand-by Current  
150  
Output Drive Section (Adjustable Version Only)  
IGSO  
IGSI  
VFB = 0.6 V, VG = 2.5 V  
VFB = 0.7 V, VG = 2.5 V  
Driver Source Current  
Drive Sink Current  
Room  
Room  
2
2
3
3
4
4
Output Drive Section (Fixed version Only)  
IGSO  
IGSI  
VFB = VO - 0.1 V, VG = 2.5 V  
VFB = VO + 0.1 V, VG = 2.5 V  
Driver Source current  
Driver Sink Current  
UVLO Section  
Room  
Room  
2
2
3
3
4
4
VCCUV  
VCCHYS  
VDUV  
VCC: Sweep up  
VCC: Sweep down  
VD: Sweep up  
VCC UVLO  
Room  
Room  
Room  
4.20  
100  
4.35  
160  
4.50  
220  
V
mV  
V
VCC UVLO Hysteresis  
VD UVLO  
0.6 x VO 0.7 x VO 0.8 x VO  
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
www.vishay.com  
3
SiP21301  
Vishay Siliconix  
ELECTRICAL SPECIFICATIONS  
Test Conditions  
CC = 5 V, VD = VIN = 3.3 V,VEN = 3 V,  
V
R1 = R1' = ∞ Ω, R2 = R2' = 0 Ω  
TA = 25 °C.  
Unless Otherwise Specified  
Parameter  
Symbol  
Temp  
Room  
Room  
Mina  
Typb  
0
Maxa  
Unit  
nA  
Drain Voltage Sensing Section (Adjustable Version Only)  
VD Input Bias Current ID  
Drain Voltage Sensing Section (Fixed Version Only)  
VD Input Bias Current  
NRCS/SCP Section  
NRCS Charge Current  
SCP Charge Current  
SCP Discharge Current  
SCP Threshold Voltage  
Short Detect Voltage  
NRCS Stand-by Voltage  
ID  
VD = 3.3 V  
100  
200  
µA  
VNRCS/SCP = 0.5 V  
VNRCS/SCP = 0.5 V  
VNRCS/SCP = 0.5 V  
NRCS  
ISCP  
Room  
Room  
Room  
Room  
Room  
Room  
14  
14  
20  
20  
26  
26  
µA  
mA  
V
ISCPD  
VSCP  
VOSCP  
VNS  
0.3  
1.2  
1.3  
1.4  
VO x 0.3 VO x 0.35 VO x 0.4  
50  
mV  
Notes:  
a. The algebraic convention whereby the most negative value is a minimum and most positive is a maximum.  
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
PIN CONFIGURATION  
MSOP8 Package (Top View)  
NRCS/SC  
GND  
V
V
V
V
D
G
EN  
S
V
CC  
FB  
Figure 3.  
PIN DESCRIPTION  
Pin Number  
Name  
Function  
1
2
NRCS/SCP  
GND  
Non-rush current on Start-up/Short circuit protection  
Ground pin  
By applying less than 0.8 V to this pin, the device will be turned off  
Connect this pin to VCC if unused  
3
4
EN  
VCC  
Input supply pin  
Feedback input  
VFB  
- Adjustable version: Connect feedback resistors to program the output voltage for the regulator  
- Fixed version: Connect this pin to VS pin  
5
VS  
VG  
VD  
6
7
8
Output of regulator. Connect to source of N-channel MOSFET  
Connect to gate of N-Channel MOSFET  
Connect to drain of N-Channel MOSFET  
www.vishay.com  
4
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
SiP21301  
Vishay Siliconix  
ORDERING INFORMATION  
Part Number  
Marking  
01AD  
0112  
Temperature Range  
Package  
SiP21301LH-AD-E3  
SiP21301LH-12-E3  
SiP21301LH-15-E3  
- 10 °C to 100 °C  
MSOP8  
0115  
FUNCTIONAL BLOCK DIAGRAM  
VCC  
+
VD  
Logic  
UVLO  
-
0.455 V  
EN  
UVLO  
Logic  
UVLO  
0.455 V  
0.65 V  
Reference  
+
+
-
NRCS  
0.65 V  
VG  
VS  
0.35 V x V  
O
Enable  
EN  
EN  
TSD  
SCP  
UVLO  
Logic  
EN  
-
+
VFB  
0.35 V x V  
O
Thermal  
Shutdown  
SCP  
SCP  
TSD  
NRCS  
NRCS  
: Adjustable Version Only  
: Fixed Version Only  
NRCS/SCP  
GND  
Figure 4.  
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
www.vishay.com  
5
SiP21301  
Vishay Siliconix  
DETAILED OPERATION DESCRIPTION  
SiP21301 is the LDO controller for the low voltage, high  
current application. It consists of enable, device UVLO, LDO  
UVLO, thermal shutdown, NRCS (None Rush Current  
Start-up), SCP (LDO Output Short Circuit Protection),  
reference voltage and error amplifier.  
The typical input UVLOthreshold voltage is set to 0.7 x VO. If  
the VD voltage is greater than 0.455 V, the LDO UVLO will be  
unlocked.  
NRCS  
The NRCS circuit begins initiated when the EN pin active  
high and the voltage on NRCS/SCP pin begins to ramp up  
because the external NRCS/SCP capacitor is being charged  
up by an internal 20 µA constant current source. When  
controller UVLO and LDO UVLO are released with 75 µs  
delay, NRCS circuit completed initialization. The voltage on  
NRCS/SCP keeps ramping up to 1 V. Once it reaches 1 V, the  
voltage on NRCS/SCP starts to discharge to ground for  
output short circuit protection. The voltage on NRCS/SCP  
pin is allowed to recharge up to 1.3 V for short circuit  
protection after startup. During this start-up period, the  
voltage on NRCS/SCP is the positive input of the error  
amplifier in the driving circuit.  
ENABLE  
The ENABLE block is to generate the enable and disable  
signal to turn the LDO control block on and off. If the voltage  
on EN pin is applied greater than 2.0 V, the control block are  
enable. If the voltage on EN pin applied less than 0.8 V, the  
control block are disabled. EN pin is an active high pin. When  
EN pin actives high, an internal 20 µA current source will  
charge up the external NRCS/SCP capacitor with out any  
delay.  
Reference Voltage  
The reference voltage is enabled, when the enable active  
high signal is applied to the EN pin. The reference voltage  
block is composed of a self-biased shunt reference circuit  
and generates following several references to for the control  
block:  
1. 1.0 V for the NRCS circuit  
2. 0.455 V for LDO UVLO circuit  
3. 1.3 V for short circuit protection circuit  
4. 0.65 V for output regulation  
5. 0.35*VO for short circuit detection  
SCP  
The SCP sense function starts to monitor the output voltage  
of the LDO once the EN input active high. After the startup,  
The voltage on NRCS/SCP pin is allowed to recharge up to  
1.3 V for short circuit protection. If the LDO is under the  
output short circuit condition, which output is lower than  
0.35 x VO, The external NRCS/SCP capacitor will be  
recharged up to 1.3 V to activate the SCP by an internal  
20 µA constant current source. During this recharge period,  
if the output short circuit condition is maintained until the  
voltage on NRCS/SCP reach 1.3 V, the output will be turned  
of with latch mode.  
Thermal Shutdown  
SiP21301 has a thermal shutdown circuit to protection itself.  
When the junction temperature is around 175 °C, the thermal  
shutdown function is activated, the output jumps into  
shutdown mode.  
Error Amplifier  
The error amplifier is  
a
conventional operation  
Controller UVLO  
Transconductance amplifier (OTA). This OTA has two  
positive inputs and one negative input. The negative input as  
a feedback signal to sense the voltage of LDO output. The  
LDO output feedback voltage on the negative input of OTA  
will follow the NRCS/SCP voltage during the start up period.  
Once the NRCS/SCP voltage exceed the reference voltage  
(0.65 V) on another positive input of OTA, the feedback  
voltage on the negative input of the OTA will follow 0.65 V  
reference voltage to regulate the output voltage of LDO.  
The function of controller UVLO is the under-voltage lockout  
function for SiP21301 itself. This function block consists of an  
input detection circuit and UVLO circuit. The input detection  
circuit senses the voltage on VCC pin to check for the safe  
operation for the rest of the control block. If the VCC voltage  
is lower than 3.5 V, this VCC detection circuit will make the  
output turn off to prevent improper operation of SiP21301. To  
drive an external N-Channel MOSFET without any charge  
pump circuit built-in as well as externally, it requires an  
enough voltage difference between VCC and VO to drive the  
external power MOSFET properly. The controller UVLO is  
built-in to ensure proper voltage difference between the gate  
and source of the external power MOSFET. The VCC need  
to reach 4.35 V to unlock UVLO. It has 160 mV hysteresis.  
Power Reset  
The output short circuit and input power failure will make  
SiP21301 go into latch shutdown mode. Toggling the EN  
from its high condition to a low condition, and then back to a  
high condition can reset an output short circuit latch and input  
power failure condition.  
LDO UVLO  
The LDO UVLO checks the drain voltage of the external  
N-Channel MOSFET independently and guarantees the VD  
voltage from abnormal condition. For fixed output version,  
the VD pin is typically connected to the input of LDO. If the VD  
voltage is greater than 0.7 x VO, the LDO UVLO will be  
unlocked. For adjustable version, an external voltage divider  
is required to set the UVLO voltage in the input side of LDO.  
www.vishay.com  
6
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
SiP21301  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
1.25  
1.24  
1.23  
1.22  
1.21  
1.20  
1.19  
1.18  
1.17  
1.16  
1.15  
0.660  
V
V
= 5 V  
= 1.2 V  
CC  
O
V
CC  
= 5 V  
0.655  
0.650  
0.645  
0.640  
0.635  
4.5  
4.7  
4.9  
5.1  
(V)  
5.3  
5.5  
5.5  
135  
- 40  
- 15  
10  
35  
60  
85  
110  
135  
V
Temperature (°C)  
VCC vs. Temperature  
CC  
VO vs. VCC  
1.215  
1.55  
1.54  
1.53  
1.52  
1.51  
1.50  
1.49  
1.48  
1.47  
1.46  
1.45  
V
V
= 5 V  
CC  
V
V
= 5 V  
= 1.2 V  
1.210  
1.205  
1.200  
1.195  
1.190  
1.185  
1.180  
1.175  
= 1.5 V  
CC  
O
O
- 40  
- 15  
10  
35  
60  
85  
110  
135  
4.5  
4.7  
4.9  
5.1  
(V)  
5.3  
Temperature (°C)  
VO vs. Temperature  
V
CC  
VO vs. VCC  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
1.515  
1.510  
1.505  
1.500  
1.495  
1.490  
1.485  
1.480  
1.475  
1.470  
V
CC  
= 5 V  
= 1.5 V  
V
O
- 40  
- 15  
10  
35  
60  
85  
110  
- 40  
- 15  
10  
35  
60  
85  
110  
135  
Temperature (°C)  
ICC vs. Temperature  
Temperature (°C)  
O vs. Temperature  
V
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
www.vishay.com  
7
SiP21301  
Vishay Siliconix  
TYPICAL CHARACTERISTICS  
1.2  
100000  
10000  
1000  
100  
1.1  
1.0  
0.9  
0.8  
10  
1
4.5  
5.0  
5.5  
6.0  
0
1
2
3
4
5
I
(A)  
O
V
CC  
(V)  
Stable Zone (SUD40N02-08)  
ICC vs. VCC  
100000  
10000  
1000  
100  
100000  
10000  
1000  
100  
10  
10  
1
1
0
0.5  
1.0  
1.5  
(A)  
2.0  
2.5  
3.0  
0
1
2
3
4
5
I
(A)  
I
O
O
Stable Zone (Si3460DV)  
Stable Zone (Si4866)  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
100  
1000  
10000  
100000  
Frequency  
V
CC  
= 5 V, V = V = 3.3 V, V = 3 V,  
IN D EN  
V
= 1.2 V, Q = SUD40N02  
O
1
PSRR  
www.vishay.com  
8
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
SiP21301  
Vishay Siliconix  
TYPICAL WAVEFORMS  
EN (500 mV/div)  
NRCS/SCP  
(200 mV/div)  
EN (500 mV/div)  
V
(500 mV/div)  
G
V
G
(1 V/div)  
V
O
(200 mV/div)  
NRCS/SCP  
(200 mV/div)  
V
O
(200 mV/div)  
1 ms/div  
VCC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
2 ms/div  
VCC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
EN Pin ENABLE Start-Up with Output Short  
V
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
V
EN Pin ENABLE Soft Start-Up  
V
(200 mV/div)  
O
V
(500 mV/div)  
D
V
(1 V/div)  
G
V
D
(500 mV/div)  
NRCS/SCP  
(200 mV/div)  
NRCS/SCP  
(200 mV/div)  
V
O
(200 mV/div)  
V
G
(1 V/div)  
V
D
= 0.7 x V  
O
V
D
= 0.7 x V  
O
2 ms/div  
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
2 ms/div  
VCC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
V
V
Power-In Soft Start-Up  
Power-In Soft Start-Up with Output Short  
NRCS/SCP  
(200 mV/div)  
V
O
(200 mV/div)  
V
(1 V/div)  
CC  
V
CC  
(1 V/div)  
V
(1 V/div)  
G
V
G
(500 mV/div)  
V
O
(200 mV/div)  
NRCS/SCP  
(200 mV/div)  
1 ms/div  
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
CC Power-In Soft Start-Up  
1 ms/div  
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
CC Power-In Soft Start-Up with Output Short  
V
V
V
V
Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
www.vishay.com  
9
SiP21301  
Vishay Siliconix  
TYPICAL WAVEFORMS  
V
IN  
V
O
= 1.7 V  
= 1.2 V  
V
IN  
V
O
= 1.7 V  
= 1.2 V  
V
(50 mV/div)  
(1 V/div)  
O
V
(50 mV/div)  
O
V
G
(1 V/div)  
V
G
I
(2 A/div)  
OUT  
I
(2 A/div)  
OUT  
50 µs/div  
20 µs/div  
V
CC = 5 V, VIN = VD = 1.7 V, VEN = 3 V,  
V
CC = 5 V, VIN = VD = 1.7 V, VEN = 3 V,  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
Rising Edge of Transient Response  
Falling Edge of Transient Response  
V
O
(200 mV/div)  
V
(200 mV/div)  
(500 mV/div)  
O
V
(1 V/div)  
G
V
V
(500 mV/div)  
G
D
EN (500 mV/div)  
20 µs/div  
200 µs/div  
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
V
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
V
V
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
VO = 1.2 V, IO = 5 A, Q1 = SUD40N02  
EN Active Low Power Down  
Input Power Fail  
V
O
(200 mV/div)  
V (1 V/div)  
G
NRCS/SCP  
(200 mV/div)  
V
O
(200 mV/div)  
V
CC  
(1 V/div)  
V
G
(1 V/div)  
50 µs/div  
1 ms/div  
CC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
Output Short Circuit After Start-Up  
VCC = 5 V, VIN = VD = 3.3 V, VEN = 3 V,  
O = 1.2 V, IO = 5 A, Q1 = SUD40N02  
CC Power Fail  
V
V
V
V
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?73952.  
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Document Number: 73952  
S-72100-Rev. B, 15-Oct-07  
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Document Number: 91000  
Revision: 18-Jul-08  
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1

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