SIP4282DVP3-T1GE3 [VISHAY]
IC BUF OR INV BASED PRPHL DRVR, PDSO6, 1.60 X 1.60 MM, ROHS COMPLIANT, SC-75, 6 PIN, Peripheral Driver;
| 型号： | SIP4282DVP3-T1GE3 |
| 厂家： | 
VISHAY |
| 描述： | IC BUF OR INV BASED PRPHL DRVR, PDSO6, 1.60 X 1.60 MM, ROHS COMPLIANT, SC-75, 6 PIN, Peripheral Driver 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总13页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiP4282
Vishay Siliconix
1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6,
and TDFN4 1.2 mm x 1.6 mm
FEATURES
DESCRIPTION
•
1.8 V to 5.5 V input voltage range for SiP4282
1.5 V to 5.5 V input voltage range for
SiP4282A
The SiP4282 series is a slew rate controlled high side switch.
The switch is of a low ON resistance P-Channel MOSFET
that supports continuous current up to 1.2 A.
•
The SiP4282 series operates with an input voltage from
1.8 V to 5.5 V. It offers under voltage lock out that turns the
switch off when an input under voltage condition exists. The
"A" option without UVLO extends the minimum operation
voltage from 1.8 V down to 1.5 V. The SiP4282 is available in
two different versions of slew rates, 100 µs and 1 ms. The
SiP4282 series integrates load discharge circuit to ensure
the discharge of capacitive load when the switch is disabled.
The SiP4282 features low input logic level to interface with
low control voltage from microprocessors. This device has a
very low operating current (typically 2.5 µA for SiP4282 and
50 pA for SiP4282A).
The SiP4282 is available in lead (Pb)-free package options
including 6 pin PPAK SC75-6, and 4 pin TDFN4 1.2 mm x
1.6 mm DFN4 packages. The operation temperature range
is specified from - 40 °C to + 85 °C.
The SiP4282 compact package options, operation voltage
range, and low operating current make it a good fit for battery
power applications.
•
•
Very low RDS(ON), typically 105 mΩ at 5 V and
175 mΩ at 3 V
Slew rate controlled turn-on time options: 100 µs, and
1 ms
•
•
•
•
•
•
Fast shutdown load discharge
Low quiescent current, 4 µA for SiP4282
Low quiescent current, 1 µA for SiP4282A
Low shutdown current < 1 µA
UVLO of 1.4 V for SiP4282
PowerPAK SC-75 1.6 mm x 1.6 mm and TDFN4 1.2 mm
x 1.6 mm packages
•
Compliant to RoHS directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
Cellular telephones
Digital still cameras
Personal digital assistants (PDA)
Hot swap supplies
Notebook computers
Personal communication devices
Portable Instruments
TYPICAL APPLICATION CIRCUIT
V
IN
IN
OUT
V
OUT
SiP4282
GND
C
1 µF
C
OUT
0.1 µF
IN
ON/OFF
ON/OFF
GND
GND
Figure 1 - SiP4282 Typical Application Circuit
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
www.vishay.com
1
SiP4282
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
Package
Slew Rate (typ.)
1 ms
Under Voltage Lockout
Marking
LDxxx
LExxx
LFxxx
AAx
Part Number
No
No
SiP4282ADVP2-T1GE3
SiP4282ADVP3-T1GE3
SiP4282DVP3-T1GE3
SiP4282ADNP2-T1GE4
SiP4282ADNP3-T1GE4
SiP4282DNP3-T1GE4
PPAK SC75-6
100 µs
100 µs
Yes
No
- 40 °C to 85 °C
1 ms
TDFN4 1.2 x 1.6
100 µs
No
ABx
100 µs
Yes
ACx
Notes:
xxx = Lot Code
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
- 0.3 to 6
Unit
Supply Input Voltage (VIN
Enable Input Voltage (VON/OFF
Output Voltage (VOUT
)
)
- 0.3 to 6
V
)
- 0.3 to VIN + 0.3
Maximum Continuous Switch Current (IMAX
)
1.4
3
VIN ≥ 2.5 V
VIN < 2.5 V
A
Maximum Pulsed Current (IDM) VIN
1.6
ESD Rating (HBM)
4000
- 40 to 125
90
V
Junction Temperature (TJ)
°C
6 pin PPAK SC75b
4 pin TDFN4 1.2 mm x 1.6 mmc
6 pin PPAK SC75b
a
°C/W
mW
Thermal Resistance (θJA
)
170
610
Power Dissipation (PD)a
4 pin TDFN4 1.2 mm x 1.6 mmc
324
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 11.1 mW/°C above TA = 70 °C.
c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Unit
V
Input Voltage Range (VIN) for SiP4282 Version
Input Voltage Range (VIN) for SiP4282A Version
Operating Temperature Range
1.8 to 5.5
1.5 to 5.5
- 40 to 85
V
°C
www.vishay.com
2
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
SiP4282
Vishay Siliconix
SPECIFICATIONS
Limits
- 40 °C to 85 °C
Test Conditions Unless Specified
IN = 5.0, TA = - 40 °C to 85 °C
V
Min.a
Typ.b
-
-
Max.a
5.5
(Typical values are at TA = 25 °C)
Parameter
Symbol
Unit
Operating Voltagec
Operating Voltage
For SiP4282xxx
For SiP4282Axxx
1.8
1.5
1.0
VIN
5.5
V
Under Voltage Voltage
VUVLO
For SiP4282xxx, VIN falling
1.4
1.8
Under Voltage Lockout Hysteresis
VUVLO(hyh)
For SiP4282xxx
-
-
-
-
250
2.5
-
4
mV
µA
For SiP4282xxx, On/Off = active
For SiP4282Axxx, On/Off = active
VIN = 5 V, IL = 500 mA, TA = 25 °C
IQ
Quiescent Current
On-Resistance
0.00005
105
1
230
V
IN = 4.2 V, IL = 500 mA, TA = 25 °C
-
-
-
110
135
230
250
290
480
V
IN = 3 V, IL = 500 mA, TA = 25 °C
RDS(on)
mΩ
V
IN = 1.8 V, IL = 500 mA, TA = 25 °C
For SiP4282Axxx, VIN = 1.5 V,
IL = 500 mA, TA = 25 °C
-
350
520
TCRDS
On-Resistance Temp-Coefficient
On/Off Input Low Voltaged
-
-
2800
-
-
ppm/°C
For SiP4282Axxx,
VIN ≥ 1.5 V to < 1.8 V
0.3
VIL
VIN ≥ 1.8 V to < 2.7 V
VIN ≥ 2.7 V to ≤ 5.5 V
-
-
-
-
-
0.4
0.6
-
V
1.3
VIN ≥ 1.5 V to < 2.7 V
VIN ≥ 2.7 V to < 4.2 V
VIN ≥ 4.2 V to ≤ 5.5 V
VOn/Off = 5.5 V
On/Off Input High Voltaged
VIH
1.5
1.8
-
-
-
-
-
-
ISINK
RPD
On/Off Input Leakage
1
µA
On/Off = Inactive, TA = 25 °C
Output Pull-Down Resistance
SiP4282Axxx2 Versions
-
180
250
Ω
td(on)
t(on)
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
SiP4282xxx3 and SiP4282Axxx3 Versions
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
-
-
-
20
1100
4
40
1500
10
µs
µs
td(off)
td(on)
t(on)
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C
-
-
-
20
140
4
40
180
10
td(off)
Notes:
a) The algebriac convention whereby the most negative value is a minimum and the most positive a maximum.
b) Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
c) Part requires minimum start-up of VIN ≥ 2.0 V to ensure operation down to 1.8 V.
d) For VIN outside this range consult typical ON/OFF threshold curve.
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
www.vishay.com
3
SiP4282
Vishay Siliconix
PIN CONFIGURATION
IN
6
5
4
1
OUT
OUT
ON/OFF
IN
4
3
1
2
OUT
GND
IN
2
3
GND
ON/OFF
GND
Bottom View
Figure 3 - TDFN4 1.2 mm x 1.6 mm Package
Bottom View
Figure 2 - PPAK SC75-6 Package
PIN DESCRIPTION
Pin Number
Name
IN
Function
PPAK
1, 2
3
TDFN4
3
2
4
1
This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 µF capacitor.
GND
Ground connection
4
ON/OFF
OUT
Enable input
5, 6
This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor.
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
0.12
0.10
0.08
0.06
0.04
0.02
0
3.0
2.5
2.0
1.5
1.0
0.5
0
SiP4282A
SiP4282
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN (V)
VIN (V)
Figure 4 - Quiescent Current vs. Input Voltage
Figure 5 - Quiescent Current vs. Input Voltage
10
1
3.5
SiP4282A
SiP4282
3.0
2.5
2.0
1.5
1.0
0.5
0
VIN = 5 V
0.1
VIN = 5 V
VIN = 3 V
0.01
VIN = 3 V
0.001
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 6 - Quiescent Current vs. Temperature
Temperature (°C)
Figure 7 - Quiescent Current vs. Temperature
www.vishay.com
4
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
SiP4282
Vishay Siliconix
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
350
300
250
200
150
100
50
300
250
200
150
100
50
VIN = 5 V
0
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
- 40
- 20
0
20
40
60
80
100
VIN (V)
Temperature (°C)
Figure 8 - Off Switch Current vs. Input Voltage
Figure 9 - Off Switch Current vs. Temperature
550
500
450
400
350
300
250
200
150
100
50
180
160
140
120
100
80
ILOAD = 500 mA
IL = 1.2 A
VIN = 3 V
IL = 500 mA
VIN = 5 V
IL = 100 mA
60
1.5
2.0
2.5
3.0
3.5
(V)
4.0
4.5
5.0
5.5
- 40
- 20
0
20
40
60
80
100
V
Temperature (°C)
IN
Figure 10 - RDS(ON) vs. Input Voltage
Figure 11 - RDS(ON) vs. Temperature
220
210
200
190
180
170
160
150
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VIH
VIL
- 40
- 20
0
20
40
60
80
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Temperature (°C)
Figure 12 - Output Pull-Down Resistance vs.
VIN (V)
Figure 13 - ON/OFF Threshold vs. Input Voltage
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
www.vishay.com
5
SiP4282
Vishay Siliconix
TYPICAL WAVEFORMS
Figure 14 - SiP4282Axxx2 Switching (VIN = 3 V)
Figure 15 - SiP4282Axxx2 Turn-Off (VIN = 3 V)
Figure 16 - SiP4282Axxx2 Switching (VIN = 5 V)
Figure 17 - SiP4282Axxx2 Turn-Off (VIN = 5 V)
Figure 18 - SiP4282xxx3 and SiP4282Axxx3 Switching
(VIN = 3 V)
Figure 19 - SiP4282xxx3 and SiP4282Axxx3 Turn-Off
(VIN = 3 V)
www.vishay.com
6
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
SiP4282
Vishay Siliconix
TYPICAL WAVEFORMS
Figure 20 - SiP4282xxx3 and SiP4282Axxx3 Switching (VIN = 5
Figure 21 - SiP4282xxx3 and SiP4282Axxx3 Turn-Off (VIN = 5 V)
BLOCK DIAGRAM
OUT
IN
Under
Voltage
Lockout
SiP4282xxx3
only
Turn-On
Slew Rate
Control
Level
Shift
ON/OFF
GND
Figure 22 - SiP4282 Functional Block Diagram
PCB LAYOUT
Top
Bottom
Figure 23 - TDFN4 1.2 mm x 1.6 mm PCB Layout
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
www.vishay.com
7
SiP4282
Vishay Siliconix
In conditions where VOUT exceeds VIN a Schottky diode in
parallel with the internal intrinsic diode is recommended to
protect the SiP4282.
DETAILED DESCRIPTION
The SiP4282 is a P-Channel MOSFET power switches
designed for high-side slew rate controlled load-switching
applications. Once turned on, the slew-rate control circuitry
is activated and current is ramped in a linear fashion until it
reaches the level required for the output load condition. This
is accomplished by first elevating the gate voltage of the
MOSFET up to its threshold voltage and then by linearly
increasing the gate voltage until the MOSFET becomes fully
enhanced. At this point, the gate voltage is then quickly
increased to the full input voltage to reduce RDS(ON) of the
MOSFET switch and minimize any associated power losses.
Thermal Considerations
The SiP4282 is designed to maintain a constant output load
current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 1.2 A,
as stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package. To
obtain the highest power dissipation (and a thermal
resistance of 90 °C/W) the power pad of the device should
be connected to a heat sink on the printed circuit board.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance
for the SC-75 PPAK package, θJ-A = 90 °C/W, and the
ambient temperature, TA, which may be formulaically
expressed as:
The SiP4282A-2 version has a modest 1 ms turn on slew rate
feature, which significantly reduces in-rush current at turned
on time and permits the load switch to be implemented with
a small input capacitor, or no input capacitor at all, saving
cost and space. All versions features a shutdown output dis-
charge circuit which is activated at shutdown (when the part
is disabled through the On/Off pin) and discharges the output
pin through a small internal resistor hence, turning off the
load.
For SiP4282-3, in instances where the input voltage falls
below 1.4 V (typically) the under voltage lock-out circuitry
protects the MOSFET switch from entering the saturation
region or operation by shutting down the chip.
TJ (max.) - T
125 - T
90
A
A
P (max.)
=
=
θ
J- A
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
610 mW.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C
occurs at an input voltage of 1.8 V and is equal to 480 mΩ.
The RDS(ON) at 70 °C can be extrapolated from this data
using the following formula
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a 1 µF
or larger capacitor for CIN is recommended in almost all
applications. The bypass capacitor should be placed as
physically close as possible to the SiP4282 to be effective in
minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may be
increased without limit to accommodate any load transient
condition with only minimal affect on the SiP4282 turn on
slew rate time. There are no ESR or capacitor type
requirement.
RDS(ON) (at 70 °C) = 480 mΩ x (1 + 0.0033 x (70 °C - 25 °C))
= 551 mΩ
The maximum current limit is then determined by
P (max.)
I
(max.) <
LOAD
Enable
R
(
)
DS ON
The On/Off pin is compatible with both TTL and CMOS logic
voltage levels.
which in case is 1.05 A. Under the stated input voltage
condition, if the 1.05 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage the
device.
Protection Against Reverse Voltage Condition
The P-channel MOSFET pass transistor has an intrinsic
diode that is reversed biased when the input voltage is
greater than the output voltage. Should VOUT exceed VIN,
this intrinsic diode will become forward biased and allow
excessive current to flow into the IC thru the VOUT pin and
potentially damage the IC device. Therefore extreme care
should be taken to prevent VOUT from exceeding VIN.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65740.
www.vishay.com
8
Document Number: 65740
S10-0671-Rev. E, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
Package Information
www.vishay.com
Vishay Siliconix
TDFN4 1.2 x 1.6 Case Outline
D
D2
b
3
4
3
Pin #1 ID
(Optional)
4
2
1
1
2
e
Index Area
(D/2 x E/2)
Bottom View
Top View
Side View
MILLIMETERS
NOM.
0.55
INCHES
DIM.
A
MIN.
0.50
0.00
MAX.
0.60
MIN.
0.020
0.00
NOM.
0.022
-
MAX.
0.024
0.002
A1
A3
b
-
0.05
0.15 REF.
0.25
0.006
0.010
0.047
0.034
0.020
0.063
0.020
0.010 TYP.
0.012
0.20
1.15
0.81
0.30
1.25
0.91
0.008
0.045
0.032
0.012
0.049
0.036
D
1.20
D2
e
0.86
0.50 BSC
1.60
E
1.55
0.45
1.65
0.55
0.061
0.018
0.065
0.022
E2
K
0.50
0.25 TYP.
0.30
L
0.25
0.35
0.010
0.014
ECN: S11-2099-Rev. B, 07-Nov-11
DWG: 5995
Revision: 07-Nov-11
Document Number: 65734
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
PowerPAK® SC75-6L (Power IC only)
D1
Exposed pad
e
b
D
Pin4
Pin 5 Pin6
K
K
PPAKSC75
(1.6 x 1.6 mm)
E1
E
Exposed pad
L
Pin3
Pin 2
e1
Pin1
K2
K2
Pin 1 Dot
By Marking
Top View
Bottom View
A
C
A1
Side View
MILLIMETERS
INCHES
DIM
A
Min
0.70
0
Nom
0.75
-
Max
0.80
0.05
0.30
0.25
1.65
1.05
1.65
0.65
Min
0.028
0
Nom
0.030
-
Max
0.032
0.002
0.012
0.010
0.065
0.041
0.065
0.026
A1
b
0.20
0.15
1.55
0.95
1.55
0.55
0.25
0.20
1.60
1.00
1.60
0.60
0.50 BSC
1.00 BSC
-
0.008
0.006
0.0061
0.037
0.061
0.022
0.010
0.008
0.063
0.039
0.063
0.024
0.020 BSC
0.039 BSC
-
C
D
D1
E
E1
e
e1
K
0.15
0.20
0.20
-
-
0.006
0.008
0.008
-
K2
L
-
0.25
0.30
0.010
0.012
ECN: S-60845-Rev. B, 22-May-06
DWG: 5953
Document Number: 73850
22-May-06
www.vishay.com
1
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
0.86
0.50
0.30
3
4
1
2
Recommended Minimum Pads
Dimensions in mm
Document Number: 66558
Revision: 05-Mar-10
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SIP43101DLP-T1-E3
IC 1.1 A BUF OR INV BASED PRPHL DRVR, QCC16, LEAD FREE, POWERPAK, MLP-44, 16 PIN, Peripheral Driver
VISHAY
SIP43101DQ-T1-E3
IC 1.1 A BUF OR INV BASED PRPHL DRVR, PDSO16, LEAD FREE, TSSOP-16, Peripheral Driver
VISHAY
©2020 ICPDF网 联系我们和版权申明