SIR428DP [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SIR428DP |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiR428DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, g
Definition
30g
30g
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
0.0075 at VGS = 10 V
0.0095 at VGS = 4.5 V
•
•
•
•
30
9.5 nC
PowerPAK® SO-8
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
Synchronous Rectification
VRM
Server
S
6.15 mm
5.15 mm
D
1
S
2
S
3
G
4
D
8
D
G
7
D
6
D
5
Bottom View
S
Ordering Information: SIR428DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
30g
30g
17.4b, c
13.8b, c
60
30g
3.7b, c
20
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
EAS
mJ
W
20
22.7
14.5
4.1b, c
2.6b, c
T
C = 70 °C
A = 25 °C
PD
Maximum Power Dissipation
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
22
Maximum
Unit
t ≤ 10 s
30
°C/W
Steady State
RthJC
4.5
5.5
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
www.vishay.com
1
New Product
SiR428DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
27
mV/°C
VGS(th) Temperature Coefficient
- 4.4
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
30
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
VGS = 10 V, ID = 10 A
0.0061
0.0077
46
0.0075
0.0095
Drain-Source On-State Resistancea
Ω
S
V
GS = 4.5 V, ID = 10 A
Forward Transconductancea
Dynamicb
VDS = 10 V, ID = 10 A
Ciss
Coss
Crss
Input Capacitance
1117
274
80
21
9.5
2.8
2.8
0.5
8
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
32
Qg
Total Gate Charge
14.5
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
0.2
1.0
16
20
34
16
32
22
36
18
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
17
8
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
16
11
18
9
V
DD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
30
60
1.1
40
28
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.75
22
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
15.5
14
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
8
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
New Product
SiR428DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
8
V
GS
= 10 V thru 4 V
48
36
24
12
0
6
T
C
= 125 °C
V
GS
= 3 V
4
T
C
= 25 °C
2
T
C
= -- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
0.009
0.008
0.007
0.006
0.005
1500
1200
900
600
300
0
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
0
12
24
36
48
60
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.7
1.5
1.3
1.1
0.9
0.7
I
= 10 A
D
I = 10 A
D
V
GS
= 4.5 V
8
V
= 10 V
V
GS
= 10 V
DS
6
V
DS
= 15 V
V
DS
= 20 V
4
2
0
0.0
4.4
8.8
13.2
17.6
22.0
-50 -25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
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3
New Product
SiR428DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
0.024
0.018
0.012
0.006
0.000
100
I
= 10 A
D
T
J
= 150 °C
10
1
T
= 25 °C
J
T
= 125 °C
J
0.1
0.01
T
= 25 °C
9
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
80
- 0.1
- 0 . 4
- 0 . 7
- 1 . 0
I
= 5 mA
D
I
= 250 µA
D
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
1 ms
10
1
10 ms
100 ms
1 s
10 s
DC
0.1
T
= 25 °C
BVDSS Limited
A
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R
is specified
GS
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
New Product
SiR428DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
36
Package Limited
27
18
9
0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
28.0
22.4
16.8
11.2
5.6
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
- Case Temperature (°C)
C
Power, Junction-to-Ambient
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
www.vishay.com
5
New Product
SiR428DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64987.
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Document Number: 64987
S09-1093-Rev. A, 15-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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